Advanced Physics of Electron Transport in Semiconductors and Nanostructures
Advanced Physics of Electron Transport in Semiconductors and Nanostructures

Author: Massimo V. Fischetti

Publisher: Springer

Published: 2016-05-20

Total Pages: 481

ISBN-13: 3319011014

DOWNLOAD EBOOK

This textbook is aimed at second-year graduate students in Physics, Electrical Engineering, or Materials Science. It presents a rigorous introduction to electronic transport in solids, especially at the nanometer scale.Understanding electronic transport in solids requires some basic knowledge of Hamiltonian Classical Mechanics, Quantum Mechanics, Condensed Matter Theory, and Statistical Mechanics. Hence, this book discusses those sub-topics which are required to deal with electronic transport in a single, self-contained course. This will be useful for students who intend to work in academia or the nano/ micro-electronics industry.Further topics covered include: the theory of energy bands in crystals, of second quantization and elementary excitations in solids, of the dielectric properties of semiconductors with an emphasis on dielectric screening and coupled interfacial modes, of electron scattering with phonons, plasmons, electrons and photons, of the derivation of transport equations in semiconductors and semiconductor nanostructures somewhat at the quantum level, but mainly at the semi-classical level. The text presents examples relevant to current research, thus not only about Si, but also about III-V compound semiconductors, nanowires, graphene and graphene nanoribbons. In particular, the text gives major emphasis to plane-wave methods applied to the electronic structure of solids, both DFT and empirical pseudopotentials, always paying attention to their effects on electronic transport and its numerical treatment. The core of the text is electronic transport, with ample discussions of the transport equations derived both in the quantum picture (the Liouville-von Neumann equation) and semi-classically (the Boltzmann transport equation, BTE). An advanced chapter, Chapter 18, is strictly related to the ‘tricky’ transition from the time-reversible Liouville-von Neumann equation to the time-irreversible Green’s functions, to the density-matrix formalism and, classically, to the Boltzmann transport equation. Finally, several methods for solving the BTE are also reviewed, including the method of moments, iterative methods, direct matrix inversion, Cellular Automata and Monte Carlo. Four appendices complete the text.

Conjugated Conducting Polymers
Conjugated Conducting Polymers

Author: Helmut Kiess

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 320

ISBN-13: 3642467296

DOWNLOAD EBOOK

This book reviews the current understanding of electronic, optical and magnetic properties of conjugated polymers in both the semiconducting and metallic states. It introduces in particular novel phenomena and concepts in these quasi one-dimensional materials that differ from the well-established concepts valid for crystalline semiconductors. After a brief introductory chapter, the second chapter presents basic theore tical concepts and treats in detail the various models for n-conjugated polymers and the computational methods required to derive observable quantities. Specific spatially localized structures, often referred to as solitons, polarons and bipolarons, result naturally from the interaction between n-electrons and lattice displacements. For a semi-quantitative understanding of the various measure ments, electron-electron interactions have to be incorporated in the models; this in turn makes the calculations rather complicated. The third chapter is devoted to the electrical properties of these materials. The high metallic conductivity achieved by doping gave rise to the expression conducting polymers, which is often used for such materials even when they are in their semiconducting or insulating state. Although conductivity is one of the most important features, the reader will learn how difficult it is to draw definite conclusions about the nature of the charge carriers and the microscopic transport mechanism solely from electrical measurements. Optical properties are discussed in the fourth chapter.

The Fundamentals of Electron Density, Density Matrix and Density Functional Theory in Atoms, Molecules and the Solid State
The Fundamentals of Electron Density, Density Matrix and Density Functional Theory in Atoms, Molecules and the Solid State

Author: N.I. Gidopoulos

Publisher: Springer Science & Business Media

Published: 2013-03-09

Total Pages: 233

ISBN-13: 9401704090

DOWNLOAD EBOOK

This volume records the proceedings of a Forum on The Fundamentals of Electron Density, Density Matrix and Density Functional Theory in Atoms, Molecules and the Solid State held at the Coseners' House, Abingdon-on-Thames, Oxon. over the period 31st May - 2nd June, 2002. The forum consisted of 26 oral and poster presentations followed by a discussion structure around questions and comments submitted by the participants (and others who had expressed an interest) in advance of the meeting. Quantum mechanics provides a theoretical foundation for our under standing of the structure and properties of atoms, molecules and the solid state in terms their component particles, electrons and nuclei. (Rel ativistic quantum mechanics is required for molecular systems contain ing heavy atoms.) However, the solution of the equations of quantum mechanics yields a function, a wave function, which depends on the co ordinates, both space and spin, of all of the particles in the system. This functions contains much more information than is required to yield the energy or other property.

Physics of Low-Dimensional Semiconductor Structures
Physics of Low-Dimensional Semiconductor Structures

Author: Paul N. Butcher

Publisher: Springer Science & Business Media

Published: 2013-11-11

Total Pages: 597

ISBN-13: 1489924159

DOWNLOAD EBOOK

Presenting the latest advances in artificial structures, this volume discusses in-depth the structure and electron transport mechanisms of quantum wells, superlattices, quantum wires, and quantum dots. It will serve as an invaluable reference and review for researchers and graduate students in solid-state physics, materials science, and electrical and electronic engineering.

Defects in SiO2 and Related Dielectrics: Science and Technology
Defects in SiO2 and Related Dielectrics: Science and Technology

Author: Gianfranco Pacchioni

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 619

ISBN-13: 9401009449

DOWNLOAD EBOOK

Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.