This book is a useful reference for practicing electrical engineers as well as a textbook for a junior/senior or graduate level course in electrical engineering. The authors combine two subjects: device modeling and circuit simulation - by providing a large number of well-prepared examples of circuit simulations immediately following the description of many device models.
This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
A short course of 15 lectures to introduce the range of modelling techniques to engineers and scientists. Reviews the applicable physics, classical and semiclassical models, and the necessary numerical techniques. Chapters focus on particular devices, materials, or techniques. A final chapter discusses practical aspects of converting designs into actual devices. Annotation copyrighted by Book News, Inc., Portland, OR
The steady downscaling of device-feature size combined with a rapid increase in circuit complexity as well as the introduction of new device concepts based on non-silicon-material systems poses great challenges for device and circuit designers. One of the major tasks is the development of new and improved device models needed for accurate device and circuit design. Another task is the development of new circuit-simulation tools to handle very large and complex circuits. This book addresses both these issues with up-to-date reviews written by leading experts in the field.The first three chapters of the book discuss advanced device models both for existing technologies and for new, emerging technologies. Among the topics covered are models for MOSFETs, thin-film transitors (TFTs), and compound semiconductor devices, including GaAs HEMTs and HFETs, heterodimensional devices, quantum-tunneling devices, as well as wide-bandgap devices. Chapters 4 and 5 discuss advanced circuit simulators that hold promise for handling circuits of much higher complexity than what is possible for typical state-of-the-art circuit simulators today.
A DEFINITIVE TEXT ON DEVELOPING CIRCUIT SIMULATORS Circuit Simulation gives a clear description of the numerical techniques and algorithms that are part of modern circuit simulators, with a focus on the most commonly used simulation modes: DC analysis and transient analysis. Tested in a graduate course on circuit simulation at the University of Toronto, this unique text provides the reader with sufficient detail and mathematical rigor to write his/her own basic circuit simulator. There is detailed coverage throughout of the mathematical and numerical techniques that are the basis for the various simulation topics, which facilitates a complete understanding of practical simulation techniques. In addition, Circuit Simulation: Explores a number of modern techniques from numerical analysis that are not synthesized anywhere else Covers network equation formulation in detail, with an emphasis on modified nodal analysis Gives a comprehensive treatment of the most relevant aspects of linear and nonlinear system solution techniques States all theorems without proof in order to maintain the focus on the end-goal of providing coverage of practical simulation methods Provides ample references for further study Enables newcomers to circuit simulation to understand the material in a concrete and holistic manner With problem sets and computer projects at the end of every chapter, Circuit Simulation is ideally suited for a graduate course on this topic. It is also a practical reference for design engineers and computer-aided design practitioners, as well as researchers and developers in both industry and academia.
This book is the first of a new, seven volume series which aims to provide a comprehensive description of basic methods and technologies related to CAD for VLSI. The series includes up-to-date results and latest developments, with a good balance between theoretical and practical aspects of VLSI design. In this volume emphasis is placed on the basics of modeling, the opening chapters being devoted to fundamental process and device modeling. The following chapters cover different aspects of device modeling and also bridge to process simulation on the one side, and circuit simulation on the other. A systems approach to physical modeling, spanning the whole range of topics covered, is also dealt with. Recent conferences on the subject have signalled that physical modeling combined with technology, device and circuit optimization, will undoubtedly become a major trend in the future.
How to stimulate circuits faster and better with SPICE. Table of Contents: PN-Junction Diode And Schottky Diode; Bipolar Junction Transistor (BJT); Junction Field-Effect Transistor (JFET); The MOS Transistor; BJT Parameter Measurements; MOS Parameter Measurements; Noise and Distortion; The SPICE Program; MESFET, ISFET, And Thyrstor Devices; Appendix A: The Two-Terminal PN Structure; Appendix B: The Two-Terminal MOS Structure; Appendix C: MS Junctions; Index. 100 illustrations.
Bridges the gap between device modelling and analog circuit design. Includes dedicated software enabling actual circuit design. Covers the three significant models: BSIM3, Model 9 & , and EKV. Presents practical guidance on device development and circuit implementation. The authors offer a combination of extensive academic and industrial experience.
