Insulated Gate Bipolar Transistor IGBT Theory and Design

Insulated Gate Bipolar Transistor IGBT Theory and Design

Author: Vinod Kumar Khanna

Publisher: John Wiley & Sons

Published: 2004-04-05

Total Pages: 648

ISBN-13: 047166099X

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A comprehensive and "state-of-the-art" coverage of the design and fabrication of IGBT. All-in-one resource Explains the fundamentals of MOS and bipolar physics. Covers IGBT operation, device and process design, power modules, and new IGBT structures.


The IGBT Device

The IGBT Device

Author: B. Jayant Baliga

Publisher: William Andrew

Published: 2015-03-06

Total Pages: 733

ISBN-13: 1455731536

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The IGBT device has proved to be a highly important Power Semiconductor, providing the basis for adjustable speed motor drives (used in air conditioning and refrigeration and railway locomotives), electronic ignition systems for gasolinepowered motor vehicles and energy-saving compact fluorescent light bulbs. Recent applications include plasma displays (flat-screen TVs) and electric power transmission systems, alternative energy systems and energy storage. This book is the first available to cover the applications of the IGBT, and provide the essential information needed by applications engineers to design new products using the device, in sectors including consumer, industrial, lighting, transportation, medical and renewable energy. The author, B. Jayant Baliga, invented the IGBT in 1980 while working for GE. His book will unlock IGBT for a new generation of engineering applications, making it essential reading for a wide audience of electrical engineers and design engineers, as well as an important publication for semiconductor specialists. - Essential design information for applications engineers utilizing IGBTs in the consumer, industrial, lighting, transportation, medical and renewable energy sectors. - Readers will learn the methodology for the design of IGBT chips including edge terminations, cell topologies, gate layouts, and integrated current sensors. - The first book to cover applications of the IGBT, a device manufactured around the world by more than a dozen companies with sales exceeding $5 Billion; written by the inventor of the device.


Semiconductor Devices

Semiconductor Devices

Author: James Fiore

Publisher:

Published: 2017-05-11

Total Pages: 407

ISBN-13: 9781796543537

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Across 15 chapters, Semiconductor Devices covers the theory and application of discrete semiconductor devices including various types of diodes, bipolar junction transistors, JFETs, MOSFETs and IGBTs. Applications include rectifying, clipping, clamping, switching, small signal amplifiers and followers, and class A, B and D power amplifiers. Focusing on practical aspects of analysis and design, interpretations of device data sheets are integrated throughout the chapters. Computer simulations of circuit responses are included as well. Each chapter features a set of learning objectives, numerous sample problems, and a variety of exercises designed to hone and test circuit design and analysis skills. A companion laboratory manual is available. This is the print version of the on-line OER.


Design, Simulation and Modeling of Insulated Gate Bipolar Transistor

Design, Simulation and Modeling of Insulated Gate Bipolar Transistor

Author: Kaustubh Gupta

Publisher:

Published: 2013

Total Pages:

ISBN-13:

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The market for Insulated Gate Bipolar Transistor (IGBT) is growing and there is a need for techniques to improve the design, modeling and simulation of IGBT. In this thesis, we first developed a new method to optimize the layout and dimensions of IGBT circuits based on device simulation and combinatorial optimization. Our method leads to the optimal IGBT layout consisting of hexagons, which is 6% more efficient in terms of performance (current per unit area) over that of squares, and up to 80% more efficient than rectangles. We also explored several techniques to reduce the time used for device simulation. In particular, we developed an accurate Verilog-A description based on the Hefner model. For transient simulation, the time used by SPICE on the Verilog-A model is only 1/10000 of that used by device simulation on the device structure. The SPICE results, though contain some inaccuracies in the details, match device simulation in the general trend. Due to the effectiveness and efficiency of our methods, we propose their application in designing better power electronic circuits and shorter turn-around time. The electronic version of this dissertation is accessible from http://hdl.handle.net/1969.1/151277


Self-Commutating Converters for High Power Applications

Self-Commutating Converters for High Power Applications

Author: Jos Arrillaga

Publisher: John Wiley & Sons

Published: 2010-01-12

Total Pages: 324

ISBN-13: 0470682124

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For very high voltage or very high current applications, the power industry still relies on thyristor-based Line Commutated Conversion (LCC), which limits the power controllability to two quadrant operation. However, the ratings of self-commutating switches such as the Insulated-Gate Bipolar Transistor (IGBT) and Integrated Gate-Commutated Thyristor (IGCT), are reaching levels that make the technology possible for very high power applications. This unique book reviews the present state and future prospects of self-commutating static power converters for applications requiring either ultra high voltages (over 600 kV) or ultra high currents (in hundreds of kA). It is an important reference for electrical engineers working in the areas of power generation, transmission and distribution, utilities, manufacturing and consulting organizations. All topics in this area are held in this one complete volume. Within these pages, expect to find thorough coverage on: modelling and control of converter dynamics; multi-level Voltage Source Conversion (VSC) and Current Source Conversion (CSC); ultra high-voltage VSC and CSC DC transmission; low voltage high DC current AC-DC conversion; industrial high current applications; power conversion for high energy storage. This text has a host of helpful material that also makes it a useful source of knowledge for final year engineering students specializing in power engineering, and those involved in postgraduate research.


Power Electronic Packaging

Power Electronic Packaging

Author: Yong Liu

Publisher: Springer Science & Business Media

Published: 2012-02-15

Total Pages: 606

ISBN-13: 1461410533

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Power Electronic Packaging presents an in-depth overview of power electronic packaging design, assembly,reliability and modeling. Since there is a drastic difference between IC fabrication and power electronic packaging, the book systematically introduces typical power electronic packaging design, assembly, reliability and failure analysis and material selection so readers can clearly understand each task's unique characteristics. Power electronic packaging is one of the fastest growing segments in the power electronic industry, due to the rapid growth of power integrated circuit (IC) fabrication, especially for applications like portable, consumer, home, computing and automotive electronics. This book also covers how advances in both semiconductor content and power advanced package design have helped cause advances in power device capability in recent years. The author extrapolates the most recent trends in the book's areas of focus to highlight where further improvement in materials and techniques can drive continued advancements, particularly in thermal management, usability, efficiency, reliability and overall cost of power semiconductor solutions.


Fundamentals of Power Semiconductor Devices

Fundamentals of Power Semiconductor Devices

Author: B. Jayant Baliga

Publisher: Springer

Published: 2018-09-28

Total Pages: 1114

ISBN-13: 3319939882

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Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment here focuses on silicon devices but includes the unique attributes and design requirements for emerging silicon carbide devices. The book will appeal to practicing engineers in the power semiconductor device community.