This book is focused on the study of physical mechanisms and device design for achieving high-performance infrared photodetection based on low-dimensional materials. Through theory analysis, material characterization and photo-electric measurements, it provides solutions to the trade-off problems which are commonly encountered in traditional infrared photodetectors and presents novel methods to improve the responsivity, detectivity and response speed. Researchers and scientists in the field of opto-electronic device can benefit from the book.
Atomic thin two-dimensional (2D) materials are the thinnest forms of materials to ever occur in nature and have the potential to dramatically alter and revolutionize our material world. Some of the unique properties of these materials including wide photoresponse wavelength, passivated surfaces, strong interaction with incident light, and high mobility have created tremendous interest in photodetector application. This book provides a comprehensive state-of-the-art knowledge about photodetector technology in the range visible to infrared region using various 2D materials including graphene, transition metal dichalcogenides, III-V semiconductor, and so on. It consists of 10 chapters contributed by a team of experts in this exciting field. We believe that this book will provide new opportunities and guidance for the development of next-generation 2D photodetector.
Since its discovery in 2004, graphene has attracted the interest of the scientific community due to its excellent properties of high carrier mobility, flexibility, strong light-matter interaction and broadband absorption. Despite of its weak light optical absorption and zero band gap, graphene has demonstrated impressive results as active material for optoelectronic devices. This success pushed towards the investigation of new two-dimensional (2D) materials to be employed in a next generation of optoelectronic devices with particular reference to the photodetectors. Indeed, most of 2D materials can be transferred on many substrates, including silicon, opening the path to the development of Schottky junctions to be used for the infrared detection. Although Schottky near-infrared silicon photodetectors based on metals are not a new concept in literature the employment of two-dimensional materials instead of metals is relatively new and it is leading to silicon-based photodetectors with unprecedented performance in the infrared regime. This chapter aims, first to elucidate the physical effect and the working principles of these devices, then to describe the main structures reported in literature, finally to discuss the most significant results obtained in recent years.
This book provides a detailed overview of the most recent advances in the fascinating world of light-emitting diodes (LEDs), organic light-emitting diodes (OLEDs), and photodetectors (PDs). Chapters in Section 1 discuss the different types and designs of LEDs/OLEDs and their use in light output, color rendering, and more. Chapters in Section 2 examine innovative structures, emerging materials, and physical effects of PDs. This book is a useful resource for students and scientists working in the field of photonics and advanced technologies.
This book describes the rapidly expanding field of two-dimensional (2D) transition metal carbides and nitrides (MXenes). It covers fundamental knowledge on synthesis, structure, and properties of these new materials, and a description of their processing, scale-up and emerging applications. The ways in which the quickly expanding family of MXenes can outperform other novel nanomaterials in a variety of applications, spanning from energy storage and conversion to electronics; from water science to transportation; and in defense and medical applications, are discussed in detail.
Completely revised and reorganized while retaining the approachable style of the first edition, Infrared Detectors, Second Edition addresses the latest developments in the science and technology of infrared (IR) detection. Antoni Rogalski, an internationally recognized pioneer in the field, covers the comprehensive range of subjects necessary to un
Room-temperature mid-infrared photodetection meet upcoming demands including real-time health condition monitoring, low-cost industrial inspection and distributive sensing for Internet-of-Things. Photo-thermoelectric (PTE) effect is a bandgap limitless photodetection mechanism which utilizes photons induced thermoelectric effect at material interfaces. The 1/f noise and shot noise in dark current can be significantly reduced in a zero-biased PTE detector. Carbon nanotubes (CNTs) and graphene are emerging low-dimensional materials with excellent PTE properties. Besides the strong and broadband light-matter interaction, their increased electrical to thermal conductivity ratio and electron density-of-states dependence on energy also lead to enhanced thermoelectric conversion efficiency. In this thesis, we present two self-powered PTE detection architectures. In the first one, vertical photo-thermoelectric effect of an anti-reflecting carbon nanotube forest (CNTF) is employed in a broadband mid-infrared detector. 99.4% average reflection suppression in the CNTF at 2.5~25 μm spectral range enables responsivity of 6 V W-1 and detectivity of 2.2×107 cm Hz1/2 W-1 under very weak illumination power, rendering sensitive weak infrared photodetection in real life. Top-electrode material, thickness and patterns are systematically studied related to the PTE response, and further improvement is possible by increasing the CNTF height and reducing the photosensitive area. In the second architecture, CNTs/Poly vinyl alcohol (PVA) composite based planar photodetector with asymmetric metallic electrodes is investigated. PTE voltage response is optimized via mixing 25 wt.% CNTs into PVA matrix attributed to the enhanced phonon scattering at CNTs/PVA interfaces. Moreover, crystallization of PVA around CNTs networks contributes to a rather stable photoresponse (variation
2D Materials for Infrared and Terahertz Detectors provides an overview of the performance of emerging detector materials, while also offering, for the first time, a comparison with traditional materials used in the fabrication of infrared and terahertz detectors. Since the discovery of graphene, its applications to electronic and optoelectronic devices have been intensively researched. The extraordinary electronic and optical properties allow graphene and other 2D materials to be promising candidates for infrared (IR) and terahertz (THz) photodetectors, and yet it appears that the development of new detectors using these materials is still secondary to those using traditional materials. This book explores this phenomenon, as well as the advantages and disadvantages of using 2D materials. Special attention is directed toward the identification of the most-effective hybrid 2D materials in infrared and terahertz detectors, as well as future trends. Written by one of the world’s leading researchers in the field of IR optoelectronics, this book will be a must-read for researchers and graduate students in photodetectors and related fields. Features • Offers a comprehensive overview of the different types of 2D materials used in fabrication of IR and THz detectors, and includes their advantages/disadvantages • The first book to compare new detectors to a wide family of common, commercially available detectors that use traditional materials.
