The Transmission Electron Microscope
The Transmission Electron Microscope

Author: Khan Maaz

Publisher: BoD – Books on Demand

Published: 2015-09-02

Total Pages: 362

ISBN-13: 9535121502

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This book The Transmission Electron Microscope abundantly illustrates necessary insight and guidance of this powerful and versatile material characterization technique with complete figures and thorough explanations. The second edition of the book presents deep understanding of new techniques from introduction to advance levels, covering in-situ transmission electron microscopy, electron and focused ion beam microscopy, and biological diagnostic through TEM. The chapters cover all major aspects of transmission electron microscopy and their uses in material characterization with special emphasis on both the theoretical and experimental aspects of modern electron microscopy techniques. It is believed that this book will provide a solid foundation of electron microscopy to the students, scientists, and engineers working in the field of material science and condensed matter physics.

Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations
Resistive Switching: Oxide Materials, Mechanisms, Devices and Operations

Author: Jennifer Rupp

Publisher: Springer Nature

Published: 2021-10-15

Total Pages: 386

ISBN-13: 3030424243

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This book provides a broad examination of redox-based resistive switching memories (ReRAM), a promising technology for novel types of nanoelectronic devices, according to the International Technology Roadmap for Semiconductors, and the materials and physical processes used in these ionic transport-based switching devices. It covers defect kinetic models for switching, ReRAM deposition/fabrication methods, tuning thin film microstructures, and material/device characterization and modeling. A slate of world-renowned authors address the influence of type of ionic carriers, their mobility, the role of the local and chemical composition and environment, and facilitate readers’ understanding of the effects of composition and structure at different length scales (e.g., crystalline vs amorphous phases, impact of extended defects such as dislocations and grain boundaries). ReRAMs show outstanding potential for scaling down to the atomic level, fast operation in the nanosecond range, low power consumption, and non-volatile storage. The book is ideal for materials scientists and engineers concerned with novel types of nanoelectronic devices such as memories, memristors, and switches for logic and neuromorphic computing circuits beyond the von Neumann concept.

Metal Oxides for Non-volatile Memory
Metal Oxides for Non-volatile Memory

Author: Panagiotis Dimitrakis

Publisher: Elsevier

Published: 2022-03-01

Total Pages: 534

ISBN-13: 0128146303

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Metal Oxides for Non-volatile Memory: Materials, Technology and Applications covers the technology and applications of metal oxides (MOx) in non-volatile memory (NVM) technology. The book addresses all types of NVMs, including floating-gate memories, 3-D memories, charge-trapping memories, quantum-dot memories, resistance switching memories and memristors, Mott memories and transparent memories. Applications of MOx in DRAM technology where they play a crucial role to the DRAM evolution are also addressed. The book offers a broad scope, encompassing discussions of materials properties, deposition methods, design and fabrication, and circuit and system level applications of metal oxides to non-volatile memory. Finally, the book addresses one of the most promising materials that may lead to a solution to the challenges in chip size and capacity for memory technologies, particular for mobile applications and embedded systems. - Systematically covers metal oxides materials and their properties with memory technology applications, including floating-gate memory, 3-D memory, memristors, and much more - Provides an overview on the most relevant deposition methods, including sputtering, CVD, ALD and MBE - Discusses the design and fabrication of metal oxides for wide breadth of non-volatile memory applications from 3-D flash technology, transparent memory and DRAM technology

Atomic Layer Deposition for Semiconductors
Atomic Layer Deposition for Semiconductors

Author: Cheol Seong Hwang

Publisher: Springer Science & Business Media

Published: 2013-10-18

Total Pages: 266

ISBN-13: 146148054X

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Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.

Thin Film Analysis by X-Ray Scattering
Thin Film Analysis by X-Ray Scattering

Author: Mario Birkholz

Publisher: John Wiley & Sons

Published: 2006-05-12

Total Pages: 378

ISBN-13: 3527607048

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With contributions by Paul F. Fewster and Christoph Genzel While X-ray diffraction investigation of powders and polycrystalline matter was at the forefront of materials science in the 1960s and 70s, high-tech applications at the beginning of the 21st century are driven by the materials science of thin films. Very much an interdisciplinary field, chemists, biochemists, materials scientists, physicists and engineers all have a common interest in thin films and their manifold uses and applications. Grain size, porosity, density, preferred orientation and other properties are important to know: whether thin films fulfill their intended function depends crucially on their structure and morphology once a chemical composition has been chosen. Although their backgrounds differ greatly, all the involved specialists a profound understanding of how structural properties may be determined in order to perform their respective tasks in search of new and modern materials, coatings and functions. The author undertakes this in-depth introduction to the field of thin film X-ray characterization in a clear and precise manner.

Ferroelectricity in Doped Hafnium Oxide
Ferroelectricity in Doped Hafnium Oxide

Author: Uwe Schroeder

Publisher: Woodhead Publishing

Published: 2019-03-27

Total Pages: 572

ISBN-13: 0081024312

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Ferroelectricity in Doped Hafnium Oxide: Materials, Properties and Devices covers all aspects relating to the structural and electrical properties of HfO2 and its implementation into semiconductor devices, including a comparison to standard ferroelectric materials. The ferroelectric and field-induced ferroelectric properties of HfO2-based films are considered promising for various applications, including non-volatile memories, negative capacitance field-effect-transistors, energy storage, harvesting, and solid-state cooling. Fundamentals of ferroelectric and piezoelectric properties, HfO2 processes, and the impact of dopants on ferroelectric properties are also extensively discussed in the book, along with phase transition, switching kinetics, epitaxial growth, thickness scaling, and more. Additional chapters consider the modeling of ferroelectric phase transformation, structural characterization, and the differences and similarities between HFO2 and standard ferroelectric materials. Finally, HfO2 based devices are summarized. - Explores all aspects of the structural and electrical properties of HfO2, including processes, modelling and implementation into semiconductor devices - Considers potential applications including FeCaps, FeFETs, NCFETs, FTJs and more - Provides comparison of an emerging ferroelectric material to conventional ferroelectric materials with insights to the problems of downscaling that conventional ferroelectrics face