High Purity and High Mobility Semiconductors 15
Author: E. R. Simoen
Publisher: The Electrochemical Society
Published: 2018-09-21
Total Pages: 190
ISBN-13: 1607688565
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Semiconductor Interfaces and Microstructures
Author: Zhe Chuan Feng
Publisher: World Scientific
Published: 1992
Total Pages: 336
ISBN-13: 9789810209889
DOWNLOAD EBOOK1. Carrier transport in artificially structured two-dimensional semiconductor systems / W. Walukiewicz -- 2. Miniband conduction in semiconductor superlattices / A. Sibille, J.F. Palmier, C. Minot -- 3. Barrier width dependence of optical properties in semiconductor superlattices / J.J. Song, J.F. Zhou and J.M. Jacob -- 4. Radiative processes in GaAs/AlGaAs heterostructures / P.O. Holtz, B. Monemar and J. Merz -- 5. Type-I-type-II transition in GaAs/AlAs superlattices / G.H. Li -- 6. Photoluminescence studies of interface roughness in GaAs/AlAs quantum well structures / D. Gammon, B.V. Shanabrook and D.S. Katzer -- 7. Optical and magneto-optical properties of narrow In[symbol]Ga[symbol]As-GaAs quantum wells / D.C. Reynolds and K.R. Evans -- 8. Growth and studies of antimony based III-V compounds by magnetron sputter epitaxy using metalorganic and solid elemental sources / J.B. Webb and R. Rousina -- 9. Properties of Cd[symbol]Mn[symbol]Te films and Cd[symbol]Mn[symbol]Te-CdTe superlattices grown by pulsed laser evaporation and epitaxy / J.M. Wrobel and J.J. Dubowski -- 10. Zn[symbol]Cd[symbol]Se[symbol]Te[symbol] quatenary II-VI wide bandgap alloys and heterostructures / R.E. Nahory, M.J.S.P. Brasil and M.C. Tamargo -- 11. Intersubband transitions in SiGe/Si quantum structures/ R.P.G. Karunasiri, K.L. Wang and J.S. Park -- 12. High-temperature discrete devices in 6H-SiC: sublimation epitaxial growth, device technology and electrical performance / M.M. Anikin [und weitere]
Germanium-Based Technologies
Author: Cor Claeys
Publisher: Elsevier
Published: 2011-07-28
Total Pages: 476
ISBN-13: 008047490X
DOWNLOAD EBOOKGermanium is a semiconductor material that formed the basis for the development of transistor technology. Although the breakthrough of planar technology and integrated circuits put silicon in the foreground, in recent years there has been a renewed interest in germanium, which has been triggered by its strong potential for deep submicron (sub 45 nm) technologies. Germanium-Based technologies: From Materials to Devices is the first book to provide a broad, in-depth coverage of the field, including recent advances in Ge-technology and the fundamentals in material science, device physics and semiconductor processing. The contributing authors are international experts with a world-wide recognition and involved in the leading research in the field. The book also covers applications and the use of Ge for optoelectronics, detectors and solar cells. An ideal reference work for students and scientists working in the field of physics of semiconductor devices and materials, as well as for engineers in research centres and industry. Both the newcomer and the expert should benefit from this unique book. - State-of-the-art information available for the first time as an all-in-source - Extensive reference list making it an indispensable reference book - Broad coverage from fundamental aspects up to industrial applications
Scientific and Technical Aerospace Reports
Author:
Publisher:
Published: 1991
Total Pages: 1460
ISBN-13:
DOWNLOAD EBOOKLists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Organic Electronics
Author: Hagen Klauk
Publisher: John Wiley & Sons
Published: 2006-12-13
Total Pages: 446
ISBN-13: 3527608621
DOWNLOAD EBOOKEdited and written by the leading researchers and engineers from such companies as Philips, 3M, Xerox, Infineon, PlasticLogic, Eastman Kodak, Dupont, AIXTRON, and Hueck Folien, this book presents unrivalled and undiluted expertise from those who know best how to assess the risks, opportunities and where this technology is really heading. As such, this practical approach complements the more scientific and fundamentals-oriented literature on the market by providing readers with a first-hand insight into industrial activities to commercialize organic electronics. Following an introduction to the topic, including the history, motivation, benefits and potentials, it reviews recent advances and covers all three important facets of organic electronics: the chemical compounds and materials, manufacturing techniques, and the resulting devices together with their current applications.
Ultra Clean Processing of Semiconductor Surfaces X
Author: Paul Mertens
Publisher: Trans Tech Publications Ltd
Published: 2012-04-12
Total Pages: 365
ISBN-13: 3038137006
DOWNLOAD EBOOKSelected, peer reviewed papers from the 10th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS), September 20-22, 2010, Ostend, Belgium
Semiconductor Physical Electronics
Author: Sheng S. Li
Publisher: Springer Science & Business Media
Published: 2012-12-06
Total Pages: 514
ISBN-13: 146130489X
DOWNLOAD EBOOKThe purpose of this book is to provide the reader with a self-contained treatment of fundamen tal solid state and semiconductor device physics. The material presented in the text is based upon the lecture notes of a one-year graduate course sequence taught by this author for many years in the ·Department of Electrical Engineering of the University of Florida. It is intended as an introductory textbook for graduate students in electrical engineering. However, many students from other disciplines and backgrounds such as chemical engineering, materials science, and physics have also taken this course sequence, and will be interested in the material presented herein. This book may also serve as a general reference for device engineers in the semiconductor industry. The present volume covers a wide variety of topics on basic solid state physics and physical principles of various semiconductor devices. The main subjects covered include crystal structures, lattice dynamics, semiconductor statistics, energy band theory, excess carrier phenomena and recombination mechanisms, carrier transport and scattering mechanisms, optical properties, photoelectric effects, metal-semiconductor devices, the p--n junction diode, bipolar junction transistor, MOS devices, photonic devices, quantum effect devices, and high speed III-V semiconductor devices. The text presents a unified and balanced treatment of the physics of semiconductor materials and devices. It is intended to provide physicists and mat erials scientists with more device backgrounds, and device engineers with a broader knowledge of fundamental solid state physics.
III-V Semiconductor Materials and Devices
Author: R.J. Malik
Publisher: Elsevier
Published: 2012-12-02
Total Pages: 740
ISBN-13: 0444596356
DOWNLOAD EBOOKThe main emphasis of this volume is on III-V semiconductor epitaxial and bulk crystal growth techniques. Chapters are also included on material characterization and ion implantation. In order to put these growth techniques into perspective a thorough review of the physics and technology of III-V devices is presented. This is the first book of its kind to discuss the theory of the various crystal growth techniques in relation to their advantages and limitations for use in III-V semiconductor devices.
Springer Handbook of Semiconductor Devices
Author: Massimo Rudan
Publisher: Springer Nature
Published: 2022-11-10
Total Pages: 1680
ISBN-13: 3030798275
DOWNLOAD EBOOKThis Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.
Novel Structured Metallic and Inorganic Materials
Author: Yuichi Setsuhara
Publisher: Springer
Published: 2019-07-01
Total Pages: 601
ISBN-13: 9811376115
DOWNLOAD EBOOKThis book describes a series of research topics investigated during the 6 years from 2010 through 2015 in the project "Advanced Materials Development and Integration of Novel Structured Metallic and Inorganic Materials". Every section of the book is aimed at understanding the most advanced research by describing details starting with the fundamentals as often as possible. Because both fundamental and cutting-edge topics are contained in this book, it provides a great deal of useful information for chemists as well as for materials scientists and engineers who wish to consider future prospects and innovations. The contents of Novel Structured Metallic and Inorganic Materials are unique in materials science and technology. The project was carried out through the cooperation of research groups in the following six institutes in Japan: the Institute for Materials Research (IMR), Tohoku University; the Materials and Structures Laboratory (MSL), Tokyo Institute of Technology; the Joining and Welding Research Institute (JWRI), Osaka University; the Eco-Topia Science Institute (EST), Nagoya University; the Institute of Biomaterials and Bioengineering (IBB), Tokyo Medical and Dental University; and the Institute for Nanoscience and Nanotechnology (INN), Waseda University. Major objectives of the project included creation of advanced metallic and inorganic materials with a novel structure, as well as development of materials-joining technologies for development of cutting-edge applications as environmental and energy materials, biomedical materials, and electronic materials for contributing to the creation of a safer and more secure society.
