Gettering and Defect Engineering in Semiconductor Technology XV

Gettering and Defect Engineering in Semiconductor Technology XV

Author: J.D. Murphy

Publisher: Trans Tech Publications Ltd

Published: 2013-10-07

Total Pages: 520

ISBN-13: 3038262056

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The book includes both fundamental and technological aspects of defects in semiconductor materials and devices, including photovoltaics. Volume is indexed by Thomson Reuters CPCI-S (WoS). The 74 papers are grouped as follows: I. Defect engineering in silicon solar cells; II. Structural and production issues in cast silicon materials for solar cells; III. Characterisation of silicon for solar cells; IV. Intrinsic point defects in silicon; V. Light impurities in silicon-based materials; VI. Metals in silicon: fundamental properties and gettering; VII. Extended and implantation-related defects in silicon; VIII. Surfaces, passivation and processing; IX. Germanium-based devices and materials; X. Semiconductors other than silicon and germanium; XI. Nanostructures and new materials systems.


Gettering and Defect Engineering in Semiconductor Technology XV

Gettering and Defect Engineering in Semiconductor Technology XV

Author: J. D. Murphy

Publisher:

Published: 2013

Total Pages: 516

ISBN-13:

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The book includes both fundamental and technological aspects of defects in semiconductor materials and devices, including photovoltaics. The 74 papers are grouped as follows: I. Defect engineering in silicon solar cells; II. Structural and production issues in cast silicon materials for solar cells; III. Characterisation of silicon for solar cells; IV. Intrinsic point defects in silicon; V. Light impurities in silicon-based materials; VI. Metals in silicon: fundamental properties and gettering; VII. Extended and implantation-related defects in silicon; VIII. Surfaces, passivation and processing; IX. Germanium-based devices and materials; X. Semiconductors other than silicon and germanium; XI. Nanostructures and new materials systems. Review from Book News Inc.: The proceedings for GADEST 2013 contains 84 papers on such matters as defect engineering in silicon solar cells, structural and production issues in cast silicon materials for solar cells, characterizing silicon for solar cells, intrinsic point defects in silicon, light impurities in silicon-based materials, fundamental properties and gettering of metals in silicon, extended and implantation-related defects in silicon, germanium-based devices and materials, semiconductors other than silicon and germanium, and nanostructures and new materials systems.


Gettering and Defect Engineering in Semiconductor Technology XVI

Gettering and Defect Engineering in Semiconductor Technology XVI

Author: Peter Pichler

Publisher: Trans Tech Publications Ltd

Published: 2015-10-23

Total Pages: 500

ISBN-13: 3035700834

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Collection of selected, peer reviewed papers from the GADEST 2015: Gettering and Defect Engineering in Semiconductor Technology, September 20-25, 2015, Bad Staffelstein, Germany. The 7 1 papers are grouped as follows: Chapter 1: Growth of Mono- and Multi-Crystalline Silicon; Chapter 2: Passivation and Defect Studies in Solar Cells; Chapter 3: Intrinsic Point Defects and Dislocations in Silicon; Chapter 4: Light Elements in Silicon-Based Materials; Chapter 5: Properties and Gettering of Transition Metals in Silicon; Chapter 6: Radiation- and Impurity-Related Defect Studies in Silicon and Germanium; Chapter 7: Thermal Properties of Semiconductors; Chapter 8: Luminescence and Optical Properties of Semiconductors; Chapter 9: Nano-Sized Layers and Structures; Chapter 10: Wide-Bandgap Semiconductors; Chapter 11: Advanced Methods and Tools for Investigation of Semiconductor Materials


Gettering and Defect Engineering in Semiconductor Technology X

Gettering and Defect Engineering in Semiconductor Technology X

Author: Hans Richter

Publisher: Trans Tech Publications Ltd

Published: 2003-09-30

Total Pages: 704

ISBN-13: 3035707243

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Volume is indexed by Thomson Reuters CPCI-S (WoS). This volume is a collection of papers presented at the 10th International Autumn Meeting on "Gettering and Defect Engineering in Semiconductor Technology - GADEST 2003," which took place from the 21st to the 26th of September 2003 at the Seehotel Zeuthen, in the state of Brandenburg, Germany. The Seehotel Zeuthen, near Berlin, was an excellent location at which to provide a forum for interactions between scientists and engineers engaged in the field of semiconductor defect physics, materials science and technology; and to reflect upon aspects of the coming era of conversion from micro-electronics to nano-electronics. In addition, a particular ambition was to strengthen the interactions and exchanges between communities working in the fields of crystalline silicon for electronics and photovoltaics.


Gettering and Defect Engineering in Semiconductor Technology XIV

Gettering and Defect Engineering in Semiconductor Technology XIV

Author: W. Jantsch

Publisher: Trans Tech Publications Ltd

Published: 2011-08-16

Total Pages: 516

ISBN-13: 3038135151

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Volume is indexed by Thomson Reuters CPCI-S (WoS). The papers contained herein cover the most important and timely issues in the field of “Gettering and Defect Engineering in Semiconductor Technology”, ranging from the theoretical analysis of defect problems to practical engineering solutions, with the emphasis on Si-based materials. Apart from the traditional topics of defect and materials engineering, characterization, modeling and simulation, and the co-integration of various material classes, topics such as materials for solar cells and photonics are discussed. Defects in graphene and in nanocrystals and nanowires are also treated, making this a very up-to-date survey of the field.


Gettering and Defect Engineering in Semiconductor Technology VII

Gettering and Defect Engineering in Semiconductor Technology VII

Author: Cor Claeys

Publisher: Trans Tech Publications Ltd

Published: 1997-07-25

Total Pages: 556

ISBN-13: 3035706719

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Defect control relies more and more upon advanced fabrication approaches such as the use of slow pulling rates and hydrogen annealing. Gettering techniques remain of key importance in enhancing the device yield.


Gettering and Defect Engineering in Semiconductor Technology XI

Gettering and Defect Engineering in Semiconductor Technology XI

Author: Bernard Pichaud

Publisher: Trans Tech Publications Ltd

Published: 2005-12-15

Total Pages: 830

ISBN-13: 303813029X

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Volume is indexed by Thomson Reuters CPCI-S (WoS). This proceedings volume contains 126 contributions from the 11th international meeting on Gettering and Defect Engineering in Semiconductor Technology GADEST 2005 held at “La Badine” at the Giens peninsula south of France.


Gettering and Defect Engineering in Semiconductor Technology IX

Gettering and Defect Engineering in Semiconductor Technology IX

Author: Vito Raineri

Publisher: Trans Tech Publications Ltd

Published: 2001-11-30

Total Pages: 850

ISBN-13: 3035707073

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Gettering and Defect Engineering in Semiconductor Technology are discussed here,with particular emphasis being placed on device applications. Fundamental aspects,as well as technological problems which are associated with defects in electronic materials and devices, are addressed. Volume is indexed by Thomson Reuters CPCI-S (WoS). The topics in this volume were selected on the basis that single-crystal Si, and Si-based, semiconductors will dominate microelectronics until far into the 21st century. The main reason for the overwhelming success of silicon technology is economic: the production cost per area increases by a factor of 5, or even 10, on going from 200 mm Si wafers to compound semiconductors or other substrate materials.