GaAs Microelectronics
GaAs Microelectronics

Author: Norman G. Einspruch

Publisher: Academic Press

Published: 2014-12-01

Total Pages: 472

ISBN-13: 1483217779

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VLSI Electronics Microstructure Science, Volume 11: GaAs Microelectronics presents the important aspects of GaAs (Gallium Arsenide) IC technology development ranging from materials preparation and IC fabrication to wafer evaluation and chip packaging. The volume is comprised of eleven chapters. Chapter 1 traces the historical development of GaAs technology for high-speed and high-frequency applications. This chapter summarizes the important properties of GaAs that serve to make this material and its related compounds technologically important. Chapter 2 covers GaAs substrate growth, ion implantation and annealing, and materials characterization, technologies that are essential for IC development. Chapters 3-6 describe the various IC technologies that are currently under development. These include microwave and digital MESFET ICs, the most mature technologies, and bipolar and field-effect heterostructure transistor ICs. The high-speed capability of GaAs ICs introduces new problems, on-wafer testing and packaging. These topics are discussed in Chapters 7 and 8. Applications for GaAs ICs are covered in Chapters 9 and 10. The first of these chapters is concerned with high speed computer applications; the second addresses military applications. The book concludes with a chapter on radiation effects in GaAs ICs. Scientists, engineers, researchers, device designers, and systems architects will find the book useful.

Gallium Arsenide, Electronics Materials and Devices. A Strategic Study of Markets, Technologies and Companies Worldwide 1999-2004
Gallium Arsenide, Electronics Materials and Devices. A Strategic Study of Markets, Technologies and Companies Worldwide 1999-2004

Author: R. Szweda

Publisher: Elsevier

Published: 2000-12-05

Total Pages: 429

ISBN-13: 0080532284

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The third edition of this highly respected market study provides a detailed insight into the global developments of the GaAs industry to 2004, and the implications for both suppliers and users of GaAs technology. The report has been completely revised and updated with a new chapter added on competitive technologies. The report also supplies market analysis by component type and application sectors.For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.

Space Microelectronics Volume 1: Modern Spacecraft Classification, Failure, and Electrical Component Requirements
Space Microelectronics Volume 1: Modern Spacecraft Classification, Failure, and Electrical Component Requirements

Author: Anatoly Belous

Publisher: Artech House

Published: 2017-06-30

Total Pages: 415

ISBN-13: 1630814687

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This authoritative first volume provides a solid understanding of modern spacecraft classification, failure, and electrical component requirements. This book focuses on the study of modern spacecraft, including their classification, packaging and protection, design versions, launch failure and accident analysis, and the main requirements of electronic components used. Readers find comprehensive coverage of the design and development of individual components as well as systems, their packaging, and how to make them last in space. This is a useful resource for military and civil applications. Specific topics include: The manufacturing of electronics for space; The main physical mechanisms of the impact of destabilizing factors of outer space, including various kinds of radiation, high-energy galactic icons, and particles of cosmic dust;The design of advanced space-grade microelectronic products such as memory microcircuits, microprocessors, interface and logic of microcircuits and power control microcircuits;Facts and features about the “space race” that have not been available until now.

Fabrication of GaAs Devices
Fabrication of GaAs Devices

Author: Albert G. Baca

Publisher: IET

Published: 2005-09

Total Pages: 372

ISBN-13: 9780863413537

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This book provides fundamental and practical information on all aspects of GaAs processing and gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processing choices, and special processing issues such as wet oxidation, which are especially important in optoelectronic devices. This book is suitable for both new and practising engineers.

Advances in Microelectronics: Reviews, Vol. 2
Advances in Microelectronics: Reviews, Vol. 2

Author: Sergey Yurish

Publisher: Lulu.com

Published: 2019-02-07

Total Pages: 516

ISBN-13: 8409081601

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The 2nd volume of 'Advances in Microelectronics: Reviews' Book Series is written by 57 contributors from academy and industry from 11 countries (Bulgaria, Hungary, Iran, Japan, Malaysia, Romania, Russia, Slovak Republic, Spain, Ukraine and USA). The book contains 13 chapters from different areas of microelectronics: MEMS, materials characterization, and various microelectronic devices. With unique combination of information in each volume, the Book Series will be of value for scientists and engineers in industry and at universities. Each of chapter is ending by well selected list of references with books, journals, conference proceedings and web sites. This book ensures that readers will stay at the cutting edge of the field and get the right and effective start point and road map for the further researches and developments.

Electronic Structure of Metal-Semiconductor Contacts
Electronic Structure of Metal-Semiconductor Contacts

Author: Winfried Mönch

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 302

ISBN-13: 9400906579

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Interface and surface science have been important in the development of semicon ductor physics right from the beginning on. Modern device concepts are not only based on p-n junctions, which are interfaces between regions containing different types of dopants, but take advantage of the electronic properties of semiconductor insulator interfaces, heterojunctions between distinct semiconductors, and metal semiconductor contacts. The latter ones stood almost at the very beginning of semi conductor physics at the end of the last century. The rectifying properties of metal-semiconductor contacts were first described by Braun in 1874. A physically correct explanation of unilateral conduction, as this deviation from Ohm's law was called, could not be given at that time. A prerequisite was Wilson's quantum theory of electronic semi-conductors which he published in 1931. A few years later, in 1938, Schottky finally explained the rectification at metal-semiconductor contacts by a space-

Microelectronics Technology and Devices--SBMICRO 2007
Microelectronics Technology and Devices--SBMICRO 2007

Author: João Antonio Martino

Publisher: The Electrochemical Society

Published: 2007

Total Pages: 615

ISBN-13: 1566775655

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The SBMicro symposium is a forum dedicated to fabrication and modeling of Microsystems, integrated circuits and devices. The goal of the symposium is to bring together researchers in the areas of processing, materials, characterization, modeling and TCAD of integrated circuits, microsensors, microactuators, and MEMS. This issue contains the papers presented at the 2007 conference.