Experimental and Computer-aided Design of Broadband Gallium Arsenide Monolithic Microwave Power Amplifiers
Author: Shiang Fu
Publisher:
Published: 1983
Total Pages: 171
ISBN-13:
DOWNLOAD EBOOKRead and Download eBook Full
Author: Shiang Fu
Publisher:
Published: 1983
Total Pages: 171
ISBN-13:
DOWNLOAD EBOOKAuthor: Shiang Fu
Publisher:
Published: 1983
Total Pages: 396
ISBN-13:
DOWNLOAD EBOOKAuthor: Jerome Thomas Dijak
Publisher:
Published: 1983
Total Pages: 370
ISBN-13:
DOWNLOAD EBOOKThe computer-aided procedures for systematic design of lumped and distributed element even-order amplifier matching networks are extended to include odd-order networks. The gain-bandwidth performance of general odd-order networks as well as that of several specific odd-order topologies of special interest are discussed. Practical monolithic input, output, and interstage matching network topologies using both lumped and distributed elements are shown, and the potential for reducing required chip area by using networks of 3rd order in lieu of 4th order is shown for both low-noise and power amplifier examples. Analytical techniques are presented for computing the maximum realizable value of the denominator polynomial constant of odd-order gain functions in both the lumped and distributed element cases for 3rd order networks of arbitrary ripple, bandwidth, minimum insertion loss, and gain slope.
Author: Narendra Kumar
Publisher: Artech House
Published: 2015-06-01
Total Pages: 365
ISBN-13: 1608078329
DOWNLOAD EBOOKThis new resource presents readers with all relevant information and comprehensive design methodology of wideband amplifiers. This book specifically focuses on distributed amplifiers and their main components, and presents numerous RF and microwave applications including well-known historical and recent architectures, theoretical approaches, circuit simulation, and practical implementation techniques. A great resource for practicing designers and engineers, this book contains numerous well-known and novel practical circuits, architectures, and theoretical approaches with detailed description of their operational principles.
Author: Bal S. Virdee
Publisher: Artech House
Published: 2004
Total Pages: 264
ISBN-13: 9781580538930
DOWNLOAD EBOOK"This authoritative resource offers a complete understanding of state-of-the-art and cutting-edge techniques for designing and fabricating broadband microwave amplifiers. The book covers the complete design cycle, detailing each stage in a practical, hands-on manner." "This comprehensive reference illustrates the formulation of small- and large-signal device models to help professionals accurately simulate amplifier performance, and covers all the practical aspects and circuit components used in fabrication. Engineers find design examples of various types of amplifiers that are applicable in broadband systems such as optical communications, satellite communications, spread-spectrum communications, wireless local area networks, electronic warfare, instrumentation, and phased array radar. The book also provides an in-depth treatment of ultra-broadband microwave amplifiers." --Book Jacket.
Author: Andrei Grebennikov
Publisher: CRC Press
Published: 2017-07-12
Total Pages: 750
ISBN-13: 1466557397
DOWNLOAD EBOOKBroadband RF and Microwave Amplifiers provides extensive coverage of broadband radio frequency (RF) and microwave power amplifier design, including well-known historical and recent novel schematic configurations, theoretical approaches, circuit simulation results, and practical implementation strategies. The text begins by introducing two-port networks to illustrate the behavior of linear and nonlinear circuits, explaining the basic principles of power amplifier design, and discussing impedance matching and broadband power amplifier design using lumped and distributed parameters. The book then: Shows how dissipative or lossy gain-compensation-matching circuits can offer an important trade-off between power gain, reflection coefficient, and operating frequency bandwidth Describes the design of broadband RF and microwave amplifiers using real frequency techniques (RFTs), supplying numerous examples based on the MATLAB® programming process Examines Class-E power amplifiers, Doherty amplifiers, low-noise amplifiers, microwave gallium arsenide field-effect transistor (GaAs FET)-distributed amplifiers, and complementary metal-oxide semiconductor (CMOS) amplifiers for ultra-wideband (UWB) applications Broadband RF and Microwave Amplifiers combines theoretical analysis with practical design to create a solid foundation for innovative ideas and circuit design techniques.
Author:
Publisher:
Published: 1995
Total Pages: 702
ISBN-13:
DOWNLOAD EBOOKAuthor: Mark Anthony Connor
Publisher:
Published: 2014
Total Pages: 102
ISBN-13:
DOWNLOAD EBOOKThe need for high power, highly efficient, multi-band and multi-mode radio frequency (RF) and microwave power amplifiers in the commercial and defense wireless industries continues to drive the research and development of gallium nitride (GaN) devices and their implementation in the receiver and transmitter lineups of modern microwave systems. Unlike silicon (Si) or gallium arsenide (GaAs), GaN is a direct wide bandgap semiconductor that permits usage in high voltage and therefore high power applications. Additionally, the increased saturation velocity of GaN allows for operation well into the super high frequency (SHF) portion of the RF spectrum. For the power amplifier designer, active devices utilizing GaN will exhibit power densities almost an order of magnitude greater than comparably sized GaAs devices and almost two orders of magnitude greater than Si devices. Not only does this mean an overall size reduction of an amplifier for a given output power, but it allows GaN to replace specialized components such as the traveling-wave tube (TWT) and other circuits once deemed impossible to realize using solid-state electronics. Designs utilizing GaN in amplifiers, switches, mixers, etc., are able to meet the continually shrinking size, increased power, stringent thermal, and cost requirements of a modern microwave system.There are two relatively straight forward methods used to investigate the intrinsic power scaling properties of a GaN high-electron-mobility transistor (HEMTs) configured as a common source amplifier. The first method involves sweeping the applied drain to source voltage bias and the second method involves scaling the physical size of the transistor. The prior method can be used to evaluate fixed sized transistors while the latter method requires an understanding of the obtainable power density for a given device technology prior to fabrication. Since the power density is also a function of the drain to source voltage bias, an initial iterative component of the design cycle may be required to fully characterize the device technology. If a scalable nonlinear device model is available to the designer, the harmonic balance simulator in most computer aided design (CAD) tools can be used to evaluate device parameters such as the maximum output power and power added efficiency (PAE) using large signal load pull simulations.The circuits presented in this thesis address two power amplifier design approaches commonly used in industry. The first approach utilizes commercially available bare die GaN transistors that can be wire-bonded to matching circuitry on a printed circuit board (PCB). This technique is known as hybrid packaging. The second approach utilizes a fully integrated design or monolithic microwave integrated circuit (MMIC) and the process design kit (PDK) used to design, simulate and layout the power amplifier circuitry before submission to a foundry for fabrication. In both cases, the nonlinear transistor models are used to investigate the power scalability of class E mode GaN power amplifiers and the techniques used to implement such circuits. The design, results, and challenges of each approach are discussed and future work is presented.
Author: Inder Bahl
Publisher: John Wiley & Sons
Published: 2009-06-17
Total Pages: 696
ISBN-13: 9780470462317
DOWNLOAD EBOOKA Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help readers test their basic amplifier and circuit design skills-and more than half of the problems feature fully worked-out solutions. With an emphasis on theory, design, and everyday applications, this book is geared toward students, teachers, scientists, and practicing engineers who are interested in broadening their knowledge of RF and microwave transistor amplifier circuit design.
Author: Andrei Grebennikov
Publisher: CRC Press
Published: 2015-11-06
Total Pages: 0
ISBN-13: 9781466557383
DOWNLOAD EBOOKThis comprehensive and up-to-date reference presents a practical approach to RF and microwave amplifier design and development. Readers will learn new analytic methods and computer-aided designs that can significantly shorten overall design time.