Integration of Functional Oxides with Semiconductors

Integration of Functional Oxides with Semiconductors

Author: Alexander A. Demkov

Publisher: Springer Science & Business Media

Published: 2014-02-20

Total Pages: 284

ISBN-13: 146149320X

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This book describes the basic physical principles of the oxide/semiconductor epitaxy and offers a view of the current state of the field. It shows how this technology enables large-scale integration of oxide electronic and photonic devices and describes possible hybrid semiconductor/oxide systems. The book incorporates both theoretical and experimental advances to explore the heteroepitaxy of tuned functional oxides and semiconductors to identify material, device and characterization challenges and to present the incredible potential in the realization of multifunctional devices and monolithic integration of materials and devices. Intended for a multidisciplined audience, Integration of Functional Oxides with Semiconductors describes processing techniques that enable atomic-level control of stoichiometry and structure and reviews characterization techniques for films, interfaces and device performance parameters. Fundamental challenges involved in joining covalent and ionic systems, chemical interactions at interfaces, multi-element materials that are sensitive to atomic-level compositional and structural changes are discussed in the context of the latest literature. Magnetic, ferroelectric and piezoelectric materials and the coupling between them will also be discussed. GaN, SiC, Si, GaAs and Ge semiconductors are covered within the context of optimizing next-generation device performance for monolithic device processing.


Molecular Beam Epitaxy

Molecular Beam Epitaxy

Author: Mohamed Henini

Publisher: Elsevier

Published: 2018-06-27

Total Pages: 790

ISBN-13: 0128121378

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Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community


Advanced Ceramic Materials

Advanced Ceramic Materials

Author: Ashutosh Tiwari

Publisher: John Wiley & Sons

Published: 2016-08-05

Total Pages: 448

ISBN-13: 1119242738

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Ceramic materials are inorganic and non-metallic porcelains, tiles, enamels, cements, glasses and refractory bricks. Today, "ceramics" has gained a wider meaning as a new generation of materials influence on our lives; electronics, computers, communications, aerospace and other industries rely on a number of their uses. In general, advanced ceramic materials include electro-ceramics, optoelectronic-ceramics, superconductive ceramics and the more recent development of piezoelectric and dielectric ceramics. They can be considered for their features including mechanical properties, decorative textures, environmental uses, energy applications, as well as their usage in bio-ceramics, composites, functionally graded materials, intelligent ceramics and so on. Advanced Ceramic Materials brings together a group of subject matter experts who describe innovative methodologies and strategies adopted in the research and development of the advanced ceramic materials. The book is written for readers from diverse backgrounds across chemistry, physics, materials science and engineering, medical science, pharmacy, environmental technology, biotechnology, and biomedical engineering. It offers a comprehensive view of cutting-edge research on ceramic materials and technologies. Divided into 3 parts concerning design, composites and functionality, the topics discussed include: Chemical strategies of epitaxial oxide ceramics nanomaterials Biphasic, triphasic and multiphasic calcium orthophosphates Microwave assisted processing of advanced ceramic composites Continuous fiber reinforced ceramic matrix composites Yytria and magnesia doped alumina ceramic Oxidation induced crack healing SWCNTs vs MWCNTs reinforcement agents Organic and inorganic wastes in clay brick production Functional tantalum oxides Application of silver tin research on hydroxyapatite


Atomic Layer Deposition Applications 6

Atomic Layer Deposition Applications 6

Author: J. W. Elam

Publisher: The Electrochemical Society

Published: 2010-10

Total Pages: 469

ISBN-13: 1566778212

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The continuously expanding realm of Atomic Layer Deposition (ALD) Applications is the focus of this reoccurring symposium. ALD can enable the precise deposition of ultra-thin, highly conformal coatings over complex 3D topographies with controlled thickness and composition. This issue of ECS Transactions contains peer reviewed papers presented at the symposium. A broad spectrum of ALD applications is featured, including novel nano-composites and nanostructures, dielectrics for state-of-the-art transistors and capacitors, optoelectronics, and a variety of other emerging applications.


Silicon Epitaxy

Silicon Epitaxy

Author:

Publisher: Elsevier

Published: 2001-09-26

Total Pages: 514

ISBN-13: 0080541003

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Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.


Thin Films on Silicon

Thin Films on Silicon

Author: Vijay Narayanan

Publisher:

Published: 2016

Total Pages: 550

ISBN-13: 9789814740487

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"This volume provides a broad overview of the fundamental materials science of thin films that use silicon as an active substrate or passive template, with an emphasis on opportunities and challenges for practical applications in electronics and photonics. It covers three materials classes on silicon: Semiconductors such as undoped and doped Si and SiGe, SiC, GaN, and III-V arsenides and phosphides; dielectrics including silicon nitride and high-k, low-k, and electro-optically active oxides; and metals, in particular silicide alloys. The impact of film growth and integration on physical, electrical, and optical properties, and ultimately device performance, is highlighted."--Publisher's website.


Leading-edge Semiconductor Research

Leading-edge Semiconductor Research

Author: Thomas B. Elliot

Publisher: Nova Publishers

Published: 2005

Total Pages: 270

ISBN-13: 9781594545740

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This book includes within its scope studies of the structural, electrical, optical and acoustical properties of bulk, low-dimensional and amorphous semiconductors; computational semiconductor physics; interface properties, including the physics and chemistry of heterojunctions, metal-semiconductor and insulator-semiconductor junctions; all multi-layered structures involving semiconductor components. Dopant incorporation. Growth and preparation of materials, including both epitaxial (e.g. molecular beam and chemical vapour methods) and bulk techniques; in situ monitoring of epitaxial growth processes, also included are appropriate aspects of surface science such as the influence of growth kinetics and chemical processing on layer and device properties. The physics of semiconductor electronic and optoelectronic devices are examined , including theoretical modelling and experimental demonstration; all aspects of the technology of semiconductor device and circuit fabrication. Relevant areas of 'molecular electronics' and semiconductor structures incorporating Langmuir-Blodgett films; resists, lithography and metallisation where they are concerned with the definition of small geometry structure. The structural, electrical and optical characterisation of materials and device structures are also included. The scope encompasses materials and device reliability: reliability evaluation of technologies; failure analysis and advanced analysis techniques such as SEM, E-beam, optical emission microscopy, acoustic microscopy techniques; liquid crystal techniques; noise measurement, reliability prediction and simulation; reliability indicators; failure mechanisms, including charge migration, trapping, oxide breakdown, hot carrier effects, electro-migration, stress migration; package- related failure mechanisms; effects of operational and environmental stresses on reliability.


Handbook of Flexible and Stretchable Electronics

Handbook of Flexible and Stretchable Electronics

Author: Muhammad M. Hussain

Publisher: CRC Press

Published: 2019-11-11

Total Pages: 536

ISBN-13: 1351623109

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Flexibility and stretchability of electronics are crucial for next generation electronic devices that involve skin contact sensing and therapeutic actuation. This handbook provides a complete entrée to the field, from solid-state physics to materials chemistry, processing, devices, performance, and reliability testing, and integrated systems development. This work shows how microelectronics, signal processing, and wireless communications in the same circuitry are impacting electronics, healthcare, and energy applications. Key Features: • Covers the fundamentals to device applications, including solid-state and mechanics, chemistry, materials science, characterization techniques, and fabrication; • Offers a comprehensive base of knowledge for moving forward in this field, from foundational research to technology development; • Focuses on processing, characterization, and circuits and systems integration for device applications; • Addresses the basic physical properties and mechanics, as well as the nuts and bolts of reliability and performance analysis; • Discusses various technology applications, from printed electronics to logic and memory devices, sensors, actuators, displays, and energy storage and harvesting. This handbook will serve as the one-stop knowledge base for readership who are interested in flexible and stretchable electronics.


Crystalline Oxide: Volume 747

Crystalline Oxide: Volume 747

Author: D. G. Schlom

Publisher:

Published: 2003-06-23

Total Pages: 408

ISBN-13:

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This book contains the proceedings of two symposia held at the 2002 MRS Fall Meeting in Boston. Papers from Symposium T, Crystalline Oxides on Semiconductors, bring together experts from different technology areas - high-k gate dielectrics, novel memories, and ferroelectrics, for example - to examine commonality among the fields. These papers offer an overview of the field, highlight interesting experimental results and device ideas, and feature innovative theoretical approaches to understanding these systems. Symposium V, Interfacial Issues for Oxide-Based Electronics, covers a wide range of topics involving the interfaces between electro-optical oxide layers and other materials. Overall, it is clear that a new generation of materials and heterostructures has been enabled by the increasing control of interfacial phenomena. Topics include: epitaxial oxide-silicon heterostructures; ferroelectric thin films on silicon; theory and modeling; crystalline oxides for gate dielectrics; transparent conducting oxides; transparent conducting oxides and oxide growth and properties; field effect devices and gate dielectrics; ferroelectrics, capacitors and sensors; organic devices and interfacial growth issues.


Materials Fundamentals of Gate Dielectrics

Materials Fundamentals of Gate Dielectrics

Author: Alexander A. Demkov

Publisher: Springer Science & Business Media

Published: 2006-05-24

Total Pages: 477

ISBN-13: 1402030789

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This book presents materials fundamentals of novel gate dielectrics that are being introduced into semiconductor manufacturing to ensure the continuous scalling of the CMOS devices. This is a very fast evolving field of research so we choose to focus on the basic understanding of the structure, thermodunamics, and electronic properties of these materials that determine their performance in device applications. Most of these materials are transition metal oxides. Ironically, the d-orbitals responsible for the high dielectric constant cause sever integration difficulties thus intrinsically limiting high-k dielectrics. Though new in the electronics industry many of these materials are wel known in the field of ceramics, and we describe this unique connection. The complexity of the structure-property relations in TM oxides makes the use of the state of the art first-principles calculations necessary. Several chapters give a detailed description of the modern theory of polarization, and heterojunction band discontinuity within the framework of the density functional theory. Experimental methods include oxide melt solution calorimetry and differential scanning calorimetry, Raman scattering and other optical characterization techniques, transmission electron microscopy, and x-ray photoelectron spectroscopy. Many of the problems encounterd in the world of CMOS are also relvant for other semiconductors such as GaAs. A comprehensive review of recent developments in this field is thus also given. The book should be of interest to those actively engaged in the gate dielectric research, and to graduate students in Materials Science, Materials Physics, Materials Chemistry, and Electrical Engineering.