Dissertation Abstracts International
Author:
Publisher:
Published: 1990
Total Pages: 774
ISBN-13:
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Author:
Publisher:
Published: 1990
Total Pages: 774
ISBN-13:
DOWNLOAD EBOOKAuthor:
Publisher:
Published: 1989
Total Pages: 760
ISBN-13:
DOWNLOAD EBOOKAuthor: Peter Pichler
Publisher: Springer Science & Business Media
Published: 2012-12-06
Total Pages: 576
ISBN-13: 3709105978
DOWNLOAD EBOOKThis book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Author: B.E. Deal
Publisher: Springer Science & Business Media
Published: 2013-11-09
Total Pages: 505
ISBN-13: 1489915885
DOWNLOAD EBOOKThe first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.
Author: Tsunenobu Kimoto
Publisher: John Wiley & Sons
Published: 2014-11-24
Total Pages: 565
ISBN-13: 1118313526
DOWNLOAD EBOOKA comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Author:
Publisher:
Published: 1997
Total Pages: 2240
ISBN-13:
DOWNLOAD EBOOKAuthor: Electrochemical Society
Publisher:
Published: 1991
Total Pages: 1272
ISBN-13:
DOWNLOAD EBOOKAuthor: Stephen A. Campbell
Publisher: OUP USA
Published: 2008-01-10
Total Pages: 0
ISBN-13: 9780195320176
DOWNLOAD EBOOKDesigned for advanced undergraduate or first-year graduate courses in semiconductor or microelectronic fabrication, the third edition of Fabrication Engineering at the Micro and Nanoscale provides a thorough and accessible introduction to all fields of micro and nano fabrication.
Author: B. Bensahel
Publisher: Springer
Published: 1993-08-31
Total Pages: 239
ISBN-13: 0792324463
DOWNLOAD EBOOKThe workshop on "Optical Properties of Low Dimensional Silicon sL Structures" was held in Meylan, France on March, I yd, 1993. The workshop took place inside the facilities of France Telecom- CNET. Around 45 leading scientists working on this rapidly moving field were in attendance. Principal support was provided by the Advanced Research Workshop Program of the North Atlantic Treaty Organisation (NATO). French Delegation a l'Armement and CNET gave also a small financial grant, the organisational part being undertaken by the SEE and CNET. There is currently intense research activity worldwide devoted to the optical properties of low dimensional silicon structures. This follow the recent discovery of efficient visible photoluminescence (PL) from highly porous silicon. This workshop was intended to bring together all the leading European scientists and laboratories in order to reveal the state of the art and to open new research fields on this subject. A large number of invited talks took place (12) together with regular contribution (20). The speakers were asked to leave nearly 1/3 of the time to the discussion with the audience, and that promoted both formal and informal discussions between the participants.