Transient Capacitance Measurement of Deep Defect Levels in GaAs and Si
Transient Capacitance Measurement of Deep Defect Levels in GaAs and Si

Author: J. T. Schott

Publisher:

Published: 1976

Total Pages: 44

ISBN-13:

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An understanding of the defects intentionally or unintentionally introduced in semiconductor crystals by crystal growth or device fabrication procedures or by operation in nuclear and space radiation environments is essential to insure proper performance of electronic and optoelectronic systems. The use of diode capacitance measurement techniques for the study of deep defect levels in semiconductors is discussed, including a recently developed technique based on transient capacitance effects. The theoretical and experimental details of this new technique, involving the use of a lock-in amplifier to process capacitance transients, are presented in appendices. This technique is applied to Schottky barrier and asymmetrical p-n junction diodes of gallium arsenide and silicon, which are primary materials of interest in a variety of device applications. Co60-gamma ray and electron irradiations on unimplanted material produce levels that are similar to some found in the complex defect spectra of ion-damaged samples.

Transient Capacitance Measurement of Deep Defect Levels in GaAs and Si
Transient Capacitance Measurement of Deep Defect Levels in GaAs and Si

Author: J. T. Schott

Publisher:

Published: 1976

Total Pages: 0

ISBN-13:

DOWNLOAD EBOOK

An understanding of the defects intentionally or unintentionally introduced in semiconductor crystals by crystal growth or device fabrication procedures or by operation in nuclear and space radiation environments is essential to insure proper performance of electronic and optoelectronic systems. The use of diode capacitance measurement techniques for the study of deep defect levels in semiconductors is discussed, including a recently developed technique based on transient capacitance effects. The theoretical and experimental details of this new technique, involving the use of a lock-in amplifier to process capacitance transients, are presented in appendices. This technique is applied to Schottky barrier and asymmetrical p-n junction diodes of gallium arsenide and silicon, which are primary materials of interest in a variety of device applications. Co60-gamma ray and electron irradiations on unimplanted material produce levels that are similar to some found in the complex defect spectra of ion-damaged samples.

Semiconductor Material and Device Characterization
Semiconductor Material and Device Characterization

Author: Dieter K. Schroder

Publisher: John Wiley & Sons

Published: 2015-06-29

Total Pages: 800

ISBN-13: 0471739065

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This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.

Characterization in Compound Semiconductor Processing
Characterization in Compound Semiconductor Processing

Author: Yale Strausser

Publisher: Momentum Press

Published: 2010

Total Pages: 217

ISBN-13: 1606500414

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"Characterization in Compound Semiconductor Processing is for scientists and engineers working with compound semiconductor materials and devices who are not characterization specialists. Materials and processes typically used in R&D and in the fabrication of GaAs, GaA1As, InP and HgCdTe based devices provide examples of common analytical problems. The book discusses a variety of characterization techniques to provide insight into how each individually, or in combination, might be used in solving problems associated with these materials. The book will help in the selection and application of the appropriate analytical techniques by its coverage of all stages of materials or device processing: substrate preparation, epitaxial growth, dielectric film deposition, contact formation and dopant introduction."--P. [4] of cover.