Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.
The main goal of this book is to review at the nano and atomic scale the very complex scientific issues that pertain to the use of advanced high dielectric constant (high-k) materials in next generation semiconductor devices. One of the key obstacles to integrate this novel class of materials into Si nano-technology are the electronic defects in high-k dielectrics. It has been established that defects do exist in high-k dielectrics and they play an important role in device operation. The unique feature of this book is a special focus on the important issue of defects. The subject is covered from various angles, including silicon technology, processing aspects, materials properties, electrical defects, microstructural studies, and theory. The authors who have contributed to the book represents a diverse group of leading scientists from academic, industrial and governmental labs worldwide who bring a broad array of backgrounds (basic and applied physics, chemistry, electrical engineering, surface science, and materials science). The contributions to this book are accessible to both expert scientists and engineers who need to keep up with leading edge research, and newcomers to the field who wish to learn more about the exciting basic and applied research issues relevant to next generation device technology.
The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.
The book is designed as an introduction for engineers and researchers wishing to obtain a fundamental knowledge and a snapshot in time of the cutting edge in technology research. As a natural consequence, Nano and Giga Challenges is also an essential reference for the "gurus" wishing to keep abreast of the latest directions and challenges in microelectronic technology development and future trends. The combination of viewpoints presented within the book can help to foster further research and cross-disciplinary interaction needed to surmount the barriers facing future generations of technology design. Key Features: • Quickly becoming the hottest topic of the new millennium (2.4 billion dollars funding in US alone • Current status and future trends of micro and nanoelectronics research • Written by leading experts in the corresponding research areas • Excellent tutorial for graduate students and reference for "gurus"
SPECTROSCOPY FOR MATERIALS CHARACTERIZATION Learn foundational and advanced spectroscopy techniques from leading researchers in physics, chemistry, surface science, and nanoscience In Spectroscopy for Materials Characterization, accomplished researcher Simonpietro Agnello delivers a practical and accessible compilation of various spectroscopy techniques taught and used to today. The book offers a wide-ranging approach taught by leading researchers working in physics, chemistry, surface science, and nanoscience. It is ideal for both new students and advanced researchers studying and working with spectroscopy. Topics such as confocal and two photon spectroscopy, as well as infrared absorption and Raman and micro-Raman spectroscopy, are discussed, as are thermally stimulated luminescence and spectroscopic studies of radiation effects on optical materials. Each chapter includes a basic introduction to the theory necessary to understand a specific technique, details about the characteristic instrumental features and apparatuses used, including tips for the appropriate arrangement of a typical experiment, and a reproducible case study that shows the discussed techniques used in a real laboratory. Readers will benefit from the inclusion of: Complete and practical case studies at the conclusion of each chapter to highlight the concepts and techniques discussed in the material Citations of additional resources ideal for further study A thorough introduction to the basic aspects of radiation matter interaction in the visible-ultraviolet range and the fundamentals of absorption and emission A rigorous exploration of time resolved spectroscopy at the nanosecond and femtosecond intervals Perfect for Master and Ph.D. students and researchers in physics, chemistry, engineering, and biology, Spectroscopy for Materials Characterization will also earn a place in the libraries of materials science researchers and students seeking a one-stop reference to basic and advanced spectroscopy techniques.
This book is devoted to the study of the properties of materials that can be in a crystalline and glassy state. Its central focus is the physics of solids, whose structure is disordered, since the existing theories of solids are based on crystal structures. The approach adopted here is based on the comparison of data for crystals and glasses formed by the same atoms, paying particular attention to the under-explored glass-forming crystals. The book will be of interest to graduate students, solid states researchers, glass technologists, and young scientists beginning research in the field of experimental physics.
The book will include contributions of the state of the art of quartz raw materials (deposits and properties) and their analytics. The chapters are presented by leading scientists in the quartz field. The presentations cover the main interrelations between genesis of quartz - formation of specific properties - analytics - industrial applications of SiO2 raw materials.
Femtosecond laser micromachining of transparent material is a powerful and versatile technology. In fact, it can be applied to several materials. It is a maskless technology that allows rapid device prototyping, has intrinsic three-dimensional capabilities and can produce both photonic and microfluidic devices. For these reasons it is ideally suited for the fabrication of complex microsystems with unprecedented functionalities. The book is mainly focused on micromachining of transparent materials which, due to the nonlinear absorption mechanism of ultrashort pulses, allows unique three-dimensional capabilities and can be exploited for the fabrication of complex microsystems with unprecedented functionalities.This book presents an overview of the state of the art of this rapidly emerging topic with contributions from leading experts in the field, ranging from principles of nonlinear material modification to fabrication techniques and applications to photonics and optofluidics.
This thesis investigates the behavior of two candidate materials (a-SiO2 and MgO) for applications in fusion (e.g., the International Thermonuclear Experimental Reactor ITER) and Generation IV fission reactors. Both parts of the thesis – the development of the ionoluminescence technique and the study of the ion-irradiation effects on both materials – are highly relevant for the fields of the ion-beam analysis techniques and irradiation damage in materials. The research presented determines the microstructural changes at different length scales in these materials under ion irradiation. In particular, it studies the effect of the irradiation temperature using several advanced characterization techniques. It also provides much-needed insights into the use of these materials at elevated temperatures. Further, it discusses the development of the ion-beam-induced luminescence technique in different research facilities around the globe, a powerful in situ spectroscopic characterization method that until now was little known. Thanks to its relevance, rigorosity and quality, this thesis has received twoprestigious awards in Spain and France.
This book provides introductory, comprehensive, and concise descriptions of amorphous chalcogenide semiconductors and related materials. It includes comparative portraits of the chalcogenide and related materials including amorphous hydrogenated Si, oxide and halide glasses, and organic polymers. It also describes effects of non-equilibrium disorder, in comparison with those in crystalline semiconductors.
