Defect Interaction and Clustering in Semiconductors
Defect Interaction and Clustering in Semiconductors

Author: Sergio Pizzini

Publisher: Scitec Publications

Published: 2002

Total Pages: 440

ISBN-13:

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Modern semiconductor devices rely upon precise defect engineering. On the one hand: defects are the components needed to generate the electronic architecture of the device. On the other hand: they may - if not carefully controlled- induce failure of that device. During the past fifty years, the electrical and optical properties of defects, their generation, transport, clustering and reactions between them have been investigated intensively. Yet the development of semiconductor technology remains closely connected to the advances made in defect science and engineering. Compared to metals, defect control in silicon is significantly complicated by the open structure of its lattice. As a result, reactions between defects, even at room temperature, have become a central issue in defect engineering.

Physical Chemistry of Semiconductor Materials and Processes
Physical Chemistry of Semiconductor Materials and Processes

Author:

Publisher: John Wiley & Sons

Published: 2015-08-17

Total Pages: 416

ISBN-13: 1118514556

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The development of solid state devices began a little more than a century ago, with the discovery of the electrical conductivity of ionic solids. Today, solid state technologies form the background of the society in which we live. The aim of this book is threefold: to present the background physical chemistry on which the technology of semiconductor devices is based; secondly, to describe specific issues such as the role of defects on the properties of solids, and the crucial influence of surface properties; and ultimately, to look at the physics and chemistry of semiconductor growth processes, both at the bulk and thin-film level, together with some issues relating to the properties of nano-devices. Divided into five chapters, it covers: Thermodynamics of solids, including phases and their properties and structural order Point defects in semiconductors Extended defects in semiconductors and their interactions with point defects and impurities Growth of semiconductor materials Physical chemistry of semiconductor materials processing With applications across all solid state technologies,the book is useful for advanced students and researchers in materials science, physics, chemistry, electrical and electronic engineering. It is also useful for those in the semiconductor industry.

Extended Defects in Semiconductors
Extended Defects in Semiconductors

Author: D. B. Holt

Publisher: Cambridge University Press

Published: 2007-04-12

Total Pages: 625

ISBN-13: 1139463594

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A discussion of the basic properties of structurally extended defects, their effect on the electronic properties of semiconductors, their role in semiconductor devices, and techniques for their characterization. This text is suitable for advanced undergraduate and graduate students in materials science and engineering, and for those studying semiconductor physics.

Charged Semiconductor Defects
Charged Semiconductor Defects

Author: Edmund G. Seebauer

Publisher: Springer Science & Business Media

Published: 2008-11-14

Total Pages: 304

ISBN-13: 1848820593

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Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.

Principles of Radiation Interaction in Matter and Detection
Principles of Radiation Interaction in Matter and Detection

Author: Claude Leroy

Publisher: World Scientific

Published: 2012

Total Pages: 1041

ISBN-13: 981436052X

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This book, like the first and second editions, addresses the fundamental principles of interaction between radiation and matter and the principles of particle detection and detectors in a wide scope of fields, from low to high energy, including space physics and medical environment. It provides abundant information about the processes of electromagnetic and hadronic energy deposition in matter, detecting systems, performance of detectors and their optimization. The third edition includes additional material covering, for instance: mechanisms of energy loss like the inverse Compton scattering, corrections due to the LandauOCoPomeranchukOCoMigdal effect, an extended relativistic treatment of nucleusOConucleus screened Coulomb scattering, and transport of charged particles inside the heliosphere. Furthermore, the displacement damage (NIEL) in semiconductors has been revisited to account for recent experimental data and more comprehensive comparisons with results previously obtained. This book will be of great use to graduate students and final-year undergraduates as a reference and supplement for courses in particle, astroparticle, space physics and instrumentation. A part of the book is directed toward courses in medical physics. The book can also be used by researchers in experimental particle physics at low, medium, and high energy who are dealing with instrumentation."