Dielectric Films for Advanced Microelectronics
Dielectric Films for Advanced Microelectronics

Author: Mikhail Baklanov

Publisher: John Wiley & Sons

Published: 2007-04-04

Total Pages: 508

ISBN-13: 0470065419

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The topic of thin films is an area of increasing importance in materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Advanced, high-performance computers, high-definition TV, broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are a few examples of the miniaturized device technologies that depend on the utilization of thin film materials. This book presents an in-depth overview of the novel developments made by the scientific leaders in the area of modern dielectric films for advanced microelectronic applications. It contains clear, concise explanations of material science of dielectric films and their problem for device operation, including high-k, low-k, medium-k dielectric films and also specific features and requirements for dielectric films used in the packaging technology. A broad range of related topics are covered, from physical principles to design, fabrication, characterization, and applications of novel dielectric films.

Advanced Gate Stacks for High-Mobility Semiconductors
Advanced Gate Stacks for High-Mobility Semiconductors

Author: Athanasios Dimoulas

Publisher: Springer Science & Business Media

Published: 2008-01-01

Total Pages: 397

ISBN-13: 354071491X

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This book provides a comprehensive monograph on gate stacks in semiconductor technology. It covers the major latest developments and basics and will be useful as a reference work for researchers, engineers and graduate students alike. The reader will get a clear view of what has been done so far, what is the state-of-the-art and which are the main challenges ahead before we come any closer to a viable Ge and III-V MOS technology.

Silicon And Beyond: Advanced Device Models And Circuit Simulators
Silicon And Beyond: Advanced Device Models And Circuit Simulators

Author: Tor A Fjeldly

Publisher: World Scientific

Published: 2000-04-20

Total Pages: 188

ISBN-13: 9814493260

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The steady downscaling of device-feature size combined with a rapid increase in circuit complexity as well as the introduction of new device concepts based on non-silicon-material systems poses great challenges for device and circuit designers. One of the major tasks is the development of new and improved device models needed for accurate device and circuit design. Another task is the development of new circuit-simulation tools to handle very large and complex circuits. This book addresses both these issues with up-to-date reviews written by leading experts in the field.The first three chapters of the book discuss advanced device models both for existing technologies and for new, emerging technologies. Among the topics covered are models for MOSFETs, thin-film transitors (TFTs), and compound semiconductor devices, including GaAs HEMTs and HFETs, heterodimensional devices, quantum-tunneling devices, as well as wide-bandgap devices. Chapters 4 and 5 discuss advanced circuit simulators that hold promise for handling circuits of much higher complexity than what is possible for typical state-of-the-art circuit simulators today.

Proceedings of International Conference on VLSI, Communication, Advanced Devices, Signals & Systems and Networking (VCASAN-2013)
Proceedings of International Conference on VLSI, Communication, Advanced Devices, Signals & Systems and Networking (VCASAN-2013)

Author: Veena S. Chakravarthi

Publisher: Springer Science & Business Media

Published: 2013-07-10

Total Pages: 464

ISBN-13: 8132215249

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This book is a collection of papers presented by renowned researchers, keynote speakers, and academicians in the International Conference on VLSI, Communication, Analog Designs, Signals & Systems and Networking (VCASAN-2013), organized by B.N.M. Institute of Technology, Bangalore, India during July 17–19, 2013. The book provides global trends in cutting-edge technologies in electronics and communication engineering. The content of the book is useful to engineers, researchers, and academicians as well as industry professionals.

Advanced Circuits for Emerging Technologies
Advanced Circuits for Emerging Technologies

Author: Krzysztof Iniewski

Publisher: John Wiley & Sons

Published: 2012-04-17

Total Pages: 632

ISBN-13: 1118181476

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The book will address the-state-of-the-art in integrated circuit design in the context of emerging systems. New exciting opportunities in body area networks, wireless communications, data networking, and optical imaging are discussed. Emerging materials that can take system performance beyond standard CMOS, like Silicon on Insulator (SOI), Silicon Germanium (SiGe), and Indium Phosphide (InP) are explored. Three-dimensional (3-D) CMOS integration and co-integration with sensor technology are described as well. The book is a must for anyone serious about circuit design for future technologies. The book is written by top notch international experts in industry and academia. The intended audience is practicing engineers with integrated circuit background. The book will be also used as a recommended reading and supplementary material in graduate course curriculum. Intended audience is professionals working in the integrated circuit design field. Their job titles might be : design engineer, product manager, marketing manager, design team leader, etc. The book will be also used by graduate students. Many of the chapter authors are University Professors.

Low-Frequency Noise in Advanced MOS Devices
Low-Frequency Noise in Advanced MOS Devices

Author: Martin Haartman

Publisher: Springer Science & Business Media

Published: 2007-08-23

Total Pages: 224

ISBN-13: 1402059108

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This is an introduction to noise, describing fundamental noise sources and basic circuit analysis, discussing characterization of low-frequency noise and offering practical advice that bridges concepts of noise theory and modelling, characterization, CMOS technology and circuits. The text offers the latest research, reviewing the most recent publications and conference presentations. The book concludes with an introduction to noise in analog/RF circuits and describes how low-frequency noise can affect these circuits.

Compact MOSFET Models for VLSI Design
Compact MOSFET Models for VLSI Design

Author: A. B. Bhattacharyya

Publisher: John Wiley & Sons

Published: 2009-07-23

Total Pages: 512

ISBN-13: 0470823437

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Practicing designers, students, and educators in the semiconductor field face an ever expanding portfolio of MOSFET models. In Compact MOSFET Models for VLSI Design , A.B. Bhattacharyya presents a unified perspective on the topic, allowing the practitioner to view and interpret device phenomena concurrently using different modeling strategies. Readers will learn to link device physics with model parameters, helping to close the gap between device understanding and its use for optimal circuit performance. Bhattacharyya also lays bare the core physical concepts that will drive the future of VLSI development, allowing readers to stay ahead of the curve, despite the relentless evolution of new models. Adopts a unified approach to guide students through the confusing array of MOSFET models Links MOS physics to device models to prepare practitioners for real-world design activities Helps fabless designers bridge the gap with off-site foundries Features rich coverage of: quantum mechanical related phenomena Si-Ge strained-Silicon substrate non-classical structures such as Double Gate MOSFETs Presents topics that will prepare readers for long-term developments in the field Includes solutions in every chapter Can be tailored for use among students and professionals of many levels Comes with MATLAB code downloads for independent practice and advanced study This book is essential for students specializing in VLSI Design and indispensible for design professionals in the microelectronics and VLSI industries. Written to serve a number of experience levels, it can be used either as a course textbook or practitioner’s reference. Access the MATLAB code, solution manual, and lecture materials at the companion website: www.wiley.com/go/bhattacharyya

Strain-Engineered MOSFETs
Strain-Engineered MOSFETs

Author: C.K. Maiti

Publisher: CRC Press

Published: 2018-10-03

Total Pages: 311

ISBN-13: 1466503475

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Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization. Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs.