Amorphous and Crystalline Silicon Carbide II
Amorphous and Crystalline Silicon Carbide II

Author: Mahmud M. Rahman

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 238

ISBN-13: 3642750486

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This volume contains written versions of the papers presented at the Second Inter national Conference on Amorphous and Crystalline Silicon Carbide and Related Materials (ICACSC 1988), which was held at Santa Clara University on Decem ber 15 and 16, 1988. The conference followed the First ICACSC held at Howard University, Washington DC, in December 1987 and continued to provide an in ternational forum for discussion and exchange of ideas and results covering the current status of research on SiC and related materials. ICACSC 1988 attracted 105 participants from five countries. The substantial increase in the number of papers compared with the previous year is an indication of the growing interest in this field. Of the 45 papers presented at the conference, 36 refereed manuscripts are included in this volume, while the remaining 9 appear as abstracts. The six invited papers provide detailed reviews of recent results on amorphous and crystalline silicon carbide materials and devices, as well as diamond thin films. The volume is divided into six parts, each covering an important theme of the conference.

Amorphous and Crystalline Silicon Carbide IV
Amorphous and Crystalline Silicon Carbide IV

Author: Cary Y. Yang

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 439

ISBN-13: 3642848044

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Silicon carbide and other group IV-IV materials in their amorphous, microcrystalline, and crystalline forms have a wide variety of applications.The contributions to this volume report recent developments and trends in the field. The purpose is to make available the current state of understanding of the materials and their potential applications. Eachcontribution focuses on a particular topic, such as preparation methods, characterization, and models explaining experimental findings. The volume also contains the latest results in the exciting field of SiGe/Si heterojunction bipolar transistors. The reader will find this book valuable as a reference source, an up-to-date and in-depth overview of this field, and, most importantly, as a window into the immense range of reading potential applications of silicon carbide. It is essential for scientists, engineers and students interested in electronic materials, high-speed heterojunction devices, and high-temperature optoelectronics.

Amorphous and Crystalline Silicon Carbide and Related Materials
Amorphous and Crystalline Silicon Carbide and Related Materials

Author: Gary L. Harris

Publisher: Springer

Published: 1989-03-08

Total Pages: 220

ISBN-13:

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Although silicon carbide has been used for more than half a century, its potential as a high-temperature, corrosion-resistant semiconductor has only recently begun to be exploited. Both crystalline and amorphous forms of SiC offer several advantages over Si, GaAs, and InP for high-frequency, high-power, and high-speed circuits. This volume contains reports on high-temperature SiC MOSFETs and MESFETs, secondary harmonic generation in SiC, a-SiC emitter heterojunction bipolar transistors, and bulk crystal growth of 6H-SiC. For newcomers to the field it provides an up-to-date review of technological developments in SiC and related materials, while specialists will find here recent references and new insights into materials for high-temperature, high-power, and high-speed circuit applications.

Computer Simulation Studies in Condensed-Matter Physics XI
Computer Simulation Studies in Condensed-Matter Physics XI

Author: David P. Landau

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 232

ISBN-13: 3642600956

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More than a decade ago, because of the phenomenal growth in the power of computer simulations, The University of Georgia formed the first institutional unit devoted to the use of simulations in research and teaching: The Center for Simulational Physics. As the simulations community expanded further, we sensed a need for a meeting place for both experienced simulators and neophytes to discuss new techniques and recent results in an environment which promoted extended discussion. As a consequence, the Center for Simulational Physics established an annual workshop on Recent Developments in Computer Simulation Studies in Condensed Matter Physics. This year's workshop was the eleventh in this series, and the interest shown by the scientific community demonstrates quite clearly the useful purpose which the series has served. The latest workshop was held at The University of Georgia, February 23-27, 1998, and these proceedings provide a "status report" on a number of important topics. This volume is published with the goal of timely dissemination of the material to a wider audience. We wish to offer a special thanks to IBM Corporation for their generous support of this year's workshop. This volume contains both invited papers and contributed presentations on problems in both classical and quantum condensed matter physics. We hope that each reader will benefit from specialized results as well as profit from exposure to new algorithms, methods of analysis, and conceptual developments. Athens, GA, U. S. A. D. P. Landau April 1998 H-B.

Computational Approaches in Condensed-Matter Physics
Computational Approaches in Condensed-Matter Physics

Author: Seiji Miyashita

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 301

ISBN-13: 3642848214

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Interacting many-body systems are the main subjects of research in theoretical condensed matter physics, and they are the source of both the interest and the difficulty in this field. In order to understand the macroscopic properties of matter in terms of macroscopic knowledge, many analytic and approximate methods have been introduced. The contributions to this proceedings volume focus on the most recent developments of computational approaches in condensed matter physics. Monte Carlo methods and molecular dynamics simulations applied to strongly correlated classical and quantum systems such as electron systems, quantum spin systems, spin glassss, coupled map systems, polymers and other random and comlex systems are reviewed. Comprising easy to follow introductions to each field covered and also more specialized contributions,this proceedings volume explains why computational approaches are necessary and how different fields are related to each other.