Widegap II–VI Compounds for Opto-electronic Applications

Widegap II–VI Compounds for Opto-electronic Applications

Author: H.E. Rúda

Publisher: Springer Science & Business Media

Published: 2013-11-27

Total Pages: 424

ISBN-13: 1461534860

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This book is intended for readers desiring a comprehensive analysis of the latest developments in widegap II-VI materials research for opto-electronic applications and basic insight into the fundamental underlying principles. Therefore, it is hoped that this book will serve two purposes. Firstly, to educate newcomers to this exciting area of physics and technology and, secondly, to provide specialists with useful references and new insights in related areas of II-VI materials research. The motivation for preparing this book originated from the need for a current review of this fertile and important field. A primary goal of this book is therefore to present an eclectic synthesis of these sometimes diverse fields of investigation. This book consists of three main sections, namely (1) Growth and Properties, (2) Materials Characterization and (3) Devices. Part One presents an overall perspective of the state of the art in the preparation of the widegap II-VI materials. Part Two concentrates on current topics pertinent to the characterization of these materials from the unique perspective of each of the authors. Part Three focuses on advances in the opto-electronic applications of these materials. The material in this section runs the gamut from addressing recent advances in device areas which date back to some of the earliest reported research in these materials, to tackling some quite new and exciting future directions.


Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic Applications

Narrow-gap II-VI Compounds for Optoelectronic and Electromagnetic Applications

Author: Peter Capper

Publisher: Springer Science & Business Media

Published: 1997-10-31

Total Pages: 632

ISBN-13: 9780412715600

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The field of narrow-gap II-VI materials is dominated by lhe compound mercury cadmium telluride, MCT or Hg1_ .. Cd .. Te. By varying the x value, material can be made to cover all the important infrared (lR) ranges of interest. It is probably true to say that MCT is the third most studied semiconductor after silicon and gallium arsenide. As current epitaxial layers of MCT are mainly grown on bulk CdTe family substrates these materials are included in this book, although strictly, of course, they are not 'narrow-gap'. This book is intended for readers who are either new to the field or are experienced workers in the field who need a comprehensive and up to date view of this rapidly expanding area. To satisfy the needs of the frrst group each chapter discusses the principles underlying each topic and some of the historical background before bringing the reader the most recent information available. For those currently in the field the book can be used as a collection of useful data, as a guide to the literature and as an overview of topics covering the wide range of work areas.


Luminescence and Related Properties of II-VI Semiconductors

Luminescence and Related Properties of II-VI Semiconductors

Author: D. R. Vij

Publisher: Nova Publishers

Published: 1998

Total Pages: 406

ISBN-13: 9781560724339

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This volume provides the readers an in-depth, yet concise, overview of the physico-chemical structures, luminescence and related properties of II-VI compounds which are being utilised and exhaustively studied these days for their applications in LED's, modern optoelectronic devices, flat EL screens and panels, infrared detectors, photovoltaic and thermal solar energy converters etc. The book, therefore, should be useful to a wide variety of people (working in the field of luminescence and related properties of II-VI compounds, i.e. advanced graduate students) and serve as a review to researchers entering in this field and working on these materials. It should also be useful to solid state spectroscopists, lasers physicists; electronic and illuminating engineering people, and all those professionals using these materials.


Ii-vi Semiconductor Compounds

Ii-vi Semiconductor Compounds

Author: Mukesh Jain

Publisher: World Scientific

Published: 1993-05-04

Total Pages: 603

ISBN-13: 9814536830

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Contents: X-Ray Characterisation of II-VI Semiconductor Materials (D Gao et al.)Electronic Structure of II-VI Semiconductors and Their Alloys (S-H Wei)Radiative Recombination Processes in Rare Earth Doped II-VI Materials (M Godlewski et al.)Nonlinear Optical Properties of Heavily Doped CdS (U Neukirch)Nanostructures of Broad Gap (II,Mn) VI Semiconductors (W Heimbrodt & O Goede)Co-Based II-VI Semimagnetic Semiconductors (A Twardowski et al.)Photoluminescence and Raman Scattering of ZnSe-ZnTe Strained Layer Superlattices (K Kumazaki)Novel Electronic Processes in Mercury-Based Superlattices (J R Meyer et al.)Strain, Pressure and Piezoelectric Effects in Strained II-VI Superlattices and Heterostructures (E Anastassakia)Electronic Structures of Strained II-VI Superlattices (T Nakayama)Devices and Applications of II-VI Compounds (S Colak)Solar Cells Based on II-VI Semiconductors (H Uda)ZnSe and Its Applications for Blue-Light Laser Diodes (M Pessa & D Ahn)Molecular Beam Epitaxy of HgCdTe for Electro-Optical Infrared Applications (J M A Cortés)and other papers Readership: Condensed matter physicists and electronic engineers. keywords:


Compound Semiconductors Strained Layers and Devices

Compound Semiconductors Strained Layers and Devices

Author: Suresh Jain

Publisher: Springer Science & Business Media

Published: 2013-11-27

Total Pages: 345

ISBN-13: 1461544416

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In recent years, extensive work has been done on strain, dislocations and mechanical properties of strained layers. Although it is not possible to describe all this work in a monograph of this size, Compound Semiconductors Strained Layers and Devices provides an overview with sufficient detail to cover all the essential aspects of recent developments in the field. The book concentrates on compound semiconductors with emphasis on wideband gap II-VI and III-Nitride semiconductors. GeSi strained layers are discussed for comparison to clarify the underlying physics. The effects of strain on band structure, transport, and optical properties of both the zinc blende and the wurtzite compound semiconductors are discussed, as are Piezoelectric Effects and Quantum Confined Stark Effects. Magnetic polarons in diluted II-VI magnetic polarons are also covered. Among the applications, blue and green LEDs and LDs and mid-IR LDs are included. A whole chapter is devoted to these devices. Another chapter examines transistors based on conventional III-V, II-VI and III-nitride semiconductors. The subject matter is treated at a level appropriate for students and senior researchers interested in material science, and in designing and modeling semiconductor devices. It will also be useful to engineers and material scientists concerned with the effects of strain on the mechanical properties of crystalline layers of any material.


Infrared Detectors and Emitters: Materials and Devices

Infrared Detectors and Emitters: Materials and Devices

Author: Peter Capper

Publisher: Springer Science & Business Media

Published: 2013-11-27

Total Pages: 500

ISBN-13: 1461516072

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An up-to-date view of the various detector/emitter materials systems currently in use or being actively researched. The book is aimed at newcomers and those already working in the IR industry. It provides both an introductory text and a valuable overview of the entire field.


Fabrication, Properties and Applications of Low-Dimensional Semiconductors

Fabrication, Properties and Applications of Low-Dimensional Semiconductors

Author: M. Balkanski

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 462

ISBN-13: 9401100896

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A recent major development in high technology, and one which bears considerable industrial potential, is the advent of low-dimensional semiconductor quantum structures. The research and development activity in this field is moving fast and it is thus important to afford scientists and engineers the opportunity to get updated by the best experts in the field. The present book draws together the latest developments in the fabrication technology of quantum structures, as well as a competent and extensive review of their fundamental properties and some remarkable applications. The book is based on a set of lectures that introduce different aspects of the basic knowledge available, it has a tutorial content and could be used as a textbook. Each aspect is reviewed, from elementary concepts up to the latest developments. Audience: Undergraduates and graduates in electrical engineering and physics schools. Also for active scientists and engineers, updating their knowledge and understanding of the frontiers of the technology.


Quantum Semiconductor Devices and Technologies

Quantum Semiconductor Devices and Technologies

Author: Tom Pearsall

Publisher: Springer Science & Business Media

Published: 2013-11-27

Total Pages: 270

ISBN-13: 1461544513

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stacked QD structure and is useful for examining the possibility of all optical measurement of stacked QD layers. Optical absorption spectra of self-assembled QDs has been little reported, and further investigation in necessary to study hole-burning memory. 2.5 Summary This chapter describes recent advances in quantum dot fabrication tech nologies, focusing on our self-formed quantum dot technologies including TSR quantum dots and SK-mode self-assembled quantum dots. As is described in this chapter, there are many possible device applications such as quantum dot tunneling memory devices, quantum dot fioating-dot gate FETs, quantum dot lasers, and quantum dot hole-burning memory devices. The quantum dot laser applications seem to be the most practicable among these applications. However, many problems remain to be solved before even this application becomes practical. The most important issue is to of self-assembled quantum dots more pre control the size and position cisely, with an accuracy on an atomic scale. The confinement must be enough to keep the separation energy between quantized energy levels high enough to get high-temperature characteristics. The lasing oscillation frequency should be fixed at 1.3 f.lITl or 1.5 f.lITl for optical communication. Phonon bottleneck problems should be solved by the optimization of device structures. Fortunately, there is much activity in the area of quantum dot lasers and, therefore, many breakthroughs will be made, along with the exploration of other new application areas.


Physical Models of Semiconductor Quantum Devices

Physical Models of Semiconductor Quantum Devices

Author: Ying Fu

Publisher: Springer

Published: 2013-11-27

Total Pages: 271

ISBN-13: 1461551412

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This detailed book addresses three main areas of solid state electronics, providing an insight into the state of the art in material and device research that will be of interest to all those involved in compound semiconductors.


Theory of Transport Properties of Semiconductor Nanostructures

Theory of Transport Properties of Semiconductor Nanostructures

Author: Eckehard Schöll

Publisher: Springer Science & Business Media

Published: 2013-11-27

Total Pages: 394

ISBN-13: 1461558077

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Recent advances in the fabrication of semiconductors have created almost un limited possibilities to design structures on a nanometre scale with extraordinary electronic and optoelectronic properties. The theoretical understanding of elec trical transport in such nanostructures is of utmost importance for future device applications. This represents a challenging issue of today's basic research since it requires advanced theoretical techniques to cope with the quantum limit of charge transport, ultrafast carrier dynamics and strongly nonlinear high-field ef fects. This book, which appears in the electronic materials series, presents an over view of the theoretical background and recent developments in the theory of electrical transport in semiconductor nanostructures. It contains 11 chapters which are written by experts in their fields. Starting with a tutorial introduction to the subject in Chapter 1, it proceeds to present different approaches to transport theory. The semiclassical Boltzmann transport equation is in the centre of the next three chapters. Hydrodynamic moment equations (Chapter 2), Monte Carlo techniques (Chapter 3) and the cellular au tomaton approach (Chapter 4) are introduced and illustrated with applications to nanometre structures and device simulation. A full quantum-transport theory covering the Kubo formalism and nonequilibrium Green's functions (Chapter 5) as well as the density matrix theory (Chapter 6) is then presented.