Wide Bandgap Nanowires
Wide Bandgap Nanowires

Author: Tuan Anh Pham

Publisher: John Wiley & Sons

Published: 2022-07-04

Total Pages: 361

ISBN-13: 1119774381

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WIDE BANDGAP NANOWIRES Comprehensive resource covering the synthesis, properties, and applications of wide bandgap nanowires This book presents first-hand knowledge on wide bandgap nanowires for sensor and energy applications. Taking a multidisciplinary approach, it brings together the materials science, physics and engineering aspects of wide bandgap nanowires, an area in which research has been accelerating dramatically in the past decade. Written by four well-qualified authors who have significant experience in the field, sample topics covered within the work include: Nanotechnology-enabled fabrication of wide bandgap nanowires, covering bottom-up, top-down and hybrid approaches Electrical, mechanical, optical, and thermal properties of wide bandgap nanowires, which are the basis for realizing sensor and energy device applications Measurement of electrical conductivity and fundamental electrical properties of nanowires Applications of nanowires, such as in flame sensors, biological sensors, and environmental monitoring For materials scientists, electrical engineers and professionals involved in the semiconductor industry, this book serves as a completely comprehensive resource to understand the topic of wide bandgap nanowires and how they can be successfully used in practical applications.

Wide Band Gap Semiconductor Nanowires 1
Wide Band Gap Semiconductor Nanowires 1

Author: Vincent Consonni

Publisher: John Wiley & Sons

Published: 2014-08-08

Total Pages: 467

ISBN-13: 1118984307

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GaN and ZnO nanowires can by grown using a wide variety of methods from physical vapor deposition to wet chemistry for optical devices. This book starts by presenting the similarities and differences between GaN and ZnO materials, as well as the assets and current limitations of nanowires for their use in optical devices, including feasibility and perspectives. It then focuses on the nucleation and growth mechanisms of ZnO and GaN nanowires, grown by various chemical and physical methods. Finally, it describes the formation of nanowire heterostructures applied to optical devices.

Wide Band Gap Semiconductor Nanowires 2
Wide Band Gap Semiconductor Nanowires 2

Author: Vincent Consonni

Publisher: John Wiley & Sons

Published: 2014-08-08

Total Pages: 316

ISBN-13: 1118984285

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This book, the second of two volumes, describes heterostructures and optoelectronic devices made from GaN and ZnO nanowires. Over the last decade, the number of publications on GaN and ZnO nanowires has grown exponentially, in particular for their potential optical applications in LEDs, lasers, UV detectors or solar cells. So far, such applications are still in their infancy, which we analyze as being mostly due to a lack of understanding and control of the growth of nanowires and related heterostructures. Furthermore, dealing with two different but related semiconductors such as ZnO and GaN, but also with different chemical and physical synthesis methods, will bring valuable comparisons in order to gain a general approach for the growth of wide band gap nanowires applied to optical devices.

Wide Bandgap Semiconductor Materials and Devices 12
Wide Bandgap Semiconductor Materials and Devices 12

Author: J. A. Bardwell

Publisher: The Electrochemical Society

Published: 2011-04

Total Pages: 222

ISBN-13: 1566778670

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This issue of ECS Transactions focuses on issues pertinent to development of wide-bandgap semiconductor materials and devices, encompassing inorganic wide-bandgap semiconductors: III-nitrides (e. g. gallium nitride), II-oxides, SiC, diamond, II-VI, and also emerging materials such as organic-inorganic nanoscale structures.

Wide Band Gap Semiconductor Nanowires 1
Wide Band Gap Semiconductor Nanowires 1

Author: Vincent Consonni

Publisher:

Published: 2014

Total Pages: 352

ISBN-13:

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Presenting the similarities and differences between GaN and ZnO materials, this book is devoted to the specific case of wires obtained from a given kind of semiconductors, namely the semiconducting materials with a direct and wide band gap (WBG). --

Wide Band Gap Semiconductor Nanowires 2
Wide Band Gap Semiconductor Nanowires 2

Author: Vincent Consonni

Publisher: John Wiley & Sons

Published: 2014-09-15

Total Pages: 0

ISBN-13: 9781848216877

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This book, the second of two volumes, describes heterostructures and optoelectronic devices made from GaN and ZnO nanowires. Over the last decade, the number of publications on GaN and ZnO nanowires has grown exponentially, in particular for their potential optical applications in LEDs, lasers, UV detectors or solar cells. So far, such applications are still in their infancy, which we analyze as being mostly due to a lack of understanding and control of the growth of nanowires and related heterostructures. Furthermore, dealing with two different but related semiconductors such as ZnO and GaN, but also with different chemical and physical synthesis methods, will bring valuable comparisons in order to gain a general approach for the growth of wide band gap nanowires applied to optical devices.

Wide Bandgap Light Emitting Materials And Devices
Wide Bandgap Light Emitting Materials And Devices

Author: Gertrude F. Neumark

Publisher: John Wiley & Sons

Published: 2008-01-08

Total Pages: 228

ISBN-13: 3527617086

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Wide bandgap light emitters include laser diodes and light-emitting diodes (LED), the most modern diodes widely used in current technologies as microelectronics and optoelectronics. Rapid advances have been made during the last few years, with the result that more research is devoted to applications in line with the expanding market for optoelectronics. This volume deals with recent research results on wide bandgap light emitting materials, introducing new concepts for devices based on these materials. The editors, scientists with the best reputations, have invited authors from different institutions who are acknowledged researchers in the field as well as being involved in industrial applications. They represent several lines of research: III-nitride compounds, ZnO and ZnSe, the most promising materials for device applications.

Study of Wide Bandgap Semiconductor Nanowire Field Effect Transistor and Resonant Tunneling Device
Study of Wide Bandgap Semiconductor Nanowire Field Effect Transistor and Resonant Tunneling Device

Author: Ye Shao

Publisher:

Published: 2015

Total Pages:

ISBN-13:

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The history of the semiconductor industry is a story of Moore's Law. However, the end of Moore's Law has been predicted for the near future as the transistor’s overly-scaled gate length eventually loses control of current flow in the channel. Gate-all-around transistors with one-dimensional nanowires (NWs) as the device channel surrounded by a gate to control the flow of current are considered as one of potential candidates for next generation electronics. In addition, their unique properties also make NW an ideal candidate for resonant tunneling devices (RTDs) with extremely high switching speed (in terahertz range) for future high frequency and THz communications. Before this becomes a reality, however, unless some fundamental issues of semiconductor NWs are clarified, it is hard to realize breakthroughs on device performance. This Ph.D research aims to address some of these issues. The research highlights and key innovations are summarized as below:

Wide Band Gap Semiconductor Nanowires 2
Wide Band Gap Semiconductor Nanowires 2

Author: Vincent Consonni

Publisher: Wiley-ISTE

Published: 2014-09-15

Total Pages: 368

ISBN-13: 9781848216877

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This book, the second of two volumes, describes heterostructures and optoelectronic devices made from GaN and ZnO nanowires. Over the last decade, the number of publications on GaN and ZnO nanowires has grown exponentially, in particular for their potential optical applications in LEDs, lasers, UV detectors or solar cells. So far, such applications are still in their infancy, which we analyze as being mostly due to a lack of understanding and control of the growth of nanowires and related heterostructures. Furthermore, dealing with two different but related semiconductors such as ZnO and GaN, but also with different chemical and physical synthesis methods, will bring valuable comparisons in order to gain a general approach for the growth of wide band gap nanowires applied to optical devices