Surface and Interface Effects in VLSI
Surface and Interface Effects in VLSI

Author: Norman G. Einspruch

Publisher: Academic Press

Published: 2014-12-01

Total Pages: 396

ISBN-13: 1483217760

DOWNLOAD EBOOK

VLSI Electronics Microstructure Science, Volume 10: Surface and Interface Effects in VLSI provides the advances made in the science of semiconductor surface and interface as they relate to electronics. This volume aims to provide a better understanding and control of surface and interface related properties. The book begins with an introductory chapter on the intimate link between interfaces and devices. The book is then divided into two parts. The first part covers the chemical and geometric structures of prototypical VLSI interfaces. Subjects detailed include, the technologically most important interface, Si-SiO2 and the interplay between interface chemistry and the causes for metal-semiconductor contact behavior, primarily in the III-Vs. The following section deals primarily with the electronic properties of interfaces. Under this section, compound semiconductors, semiconductor-semiconductor interface, constraints that the microscopic interface places on architectures involving metal-semiconductor (MESFET), "Ohmic" contacts, and the behavior of very small, high-speed devices are discussed extensively. The final chapter shows that the Si - SiO2 interface can play a major role in determining carrier transport when MOSFETS are scaled down to ULSI dimensions. Engineers, designers, and scientists will find the book very useful.

Surfaces and Interfaces: Physics and Electronics
Surfaces and Interfaces: Physics and Electronics

Author: R.S. Bauer

Publisher: Elsevier

Published: 2012-12-02

Total Pages: 663

ISBN-13: 0444600167

DOWNLOAD EBOOK

Surfaces and Interfaces: Physics and Electronics covers the proceedings of the second Trieste ICTP-IUPAP Semiconductor Symposium, conducted at the International Center for Theoretical Physics in Trieste, Italy on August 30 to September 3, 1982. The book focuses on the processes, methodologies, reactions, and approaches involved in semiconductor physics. The selection first elaborates on the electronic properties and surface geometry of GaAs and ZnO surfaces; electronic structure of Si (III) surfaces; and photoemission studies of surface states on Si (III) 2X1. Discussions focus on consistency of different experiments, relating experiments to a theoretical model, quenching of surface states by hydrogen, inverse photoemission results, and basic data and models of the low-index ZnO surfaces. The text then examines Si (III) 2X1 studies by angle resolved photoemission; electronic surface states at steps in Si (III) 2X1; and a novel method for the study of optical properties of surfaces. The manuscript takes a look at spot profile analysis (LEED) of defects at silicon surfaces; chemisorption-induced defects at interfaces on compound semiconductors; and surface defects on semiconductors. The microscopic properties and behavior of silicide interfaces, recombination at semiconductor surfaces and interfaces, and dipoles, defects, and interfaces are also discussed. The selection is a highly recommended source of data for physicists and readers wanting to study semiconductor physics.

Selected Works of Professor Herbert Kroemer
Selected Works of Professor Herbert Kroemer

Author: C. K. Maiti

Publisher: World Scientific

Published: 2008

Total Pages: 385

ISBN-13: 9812709029

DOWNLOAD EBOOK

Information technology has changed our society radically. Just as the integrated circuits have been the prime mover for electronics, high-speed transistors and semiconductor lasers based on heterostructures are now playing the same role in modern telecommunications. Professor Kroemer's conceptual work on heterostructures began in the early 1950s as he was looking for a way to improve transistor speed and performance. In the 1960s, he applied the same principles to the development of lasers and light-emitting diodes, showing that they could achieve continuous operation at room temperature OCo something thought impossible at that time. His deep fundamental scientific work has had a profound effect on technology and society, transforming and improving our lives.This reprint collection brings together Professor Kroemer's most important papers, presenting a comprehensive perspective of the field. It covers topics ranging from substrate materials, electronic properties, process technology, and devices, to circuits and applications. This reprint collection will help the reader identify the key stages in the development of heterostructure devices and lasers from early research through to its integration in current manufacturing. Devoted to R&D engineers and scientists who are actively involved in extending the nano- and microelectronics roadmap mainly via heterostructure engineering, this volume may also serve as a reference for postgraduate and research students."

Compounts Semiconductors
Compounts Semiconductors

Author: Paul H. Holloway

Publisher: CRC Press

Published: 1989-12-27

Total Pages: 164

ISBN-13: 9780849301650

DOWNLOAD EBOOK

This book provides a review of the state-of-the-advancing-art in growth, processing and devices from compound semiconductors. Consisting of the proceedings of an important topical conference held at the University of Florida, speakers from both the U.S. and Japan were present. This fascinating work discusses critical issues in growth and characterization by semi-insulating bulk crystals, with particular emphasis placed on the latest modification of gas sources. It includes the advantages, limitations, and techniques pertaining to chemical vapor deposition. This compilation presents the most recent advances in the new technologies involving compound semiconductors, thus it fills an important need in the fast-moving field of microelectronics. This one-of-a-kind resource provides contrasts and insight into U.S. and Japanese technologies and devices as well as indications of future directions. It provides a very up-to-date and comprehensive treatment of world-class scientific and technological developments in this astounding area of major commercial importance. These proceedings will be a useful, indispensable resource for scientific researchers, process engineers, and technology strategists.

Device Electronics for Integrated Circuits
Device Electronics for Integrated Circuits

Author: Richard S. Muller

Publisher: John Wiley & Sons

Published: 2002-10-28

Total Pages: 564

ISBN-13: 0471593982

DOWNLOAD EBOOK

Focusing specifically on silicon devices, the Third Edition of Device Electronics for Integrated Circuits takes students in integrated-circuits courses from fundamental physics to detailed device operation. Because the book focuses primarily on silicon devices, each topic can include more depth, and extensive worked examples and practice problems ensure that students understand the details.

GaAs Microelectronics
GaAs Microelectronics

Author: Norman G. Einspruch

Publisher: Academic Press

Published: 2014-12-01

Total Pages: 472

ISBN-13: 1483217779

DOWNLOAD EBOOK

VLSI Electronics Microstructure Science, Volume 11: GaAs Microelectronics presents the important aspects of GaAs (Gallium Arsenide) IC technology development ranging from materials preparation and IC fabrication to wafer evaluation and chip packaging. The volume is comprised of eleven chapters. Chapter 1 traces the historical development of GaAs technology for high-speed and high-frequency applications. This chapter summarizes the important properties of GaAs that serve to make this material and its related compounds technologically important. Chapter 2 covers GaAs substrate growth, ion implantation and annealing, and materials characterization, technologies that are essential for IC development. Chapters 3-6 describe the various IC technologies that are currently under development. These include microwave and digital MESFET ICs, the most mature technologies, and bipolar and field-effect heterostructure transistor ICs. The high-speed capability of GaAs ICs introduces new problems, on-wafer testing and packaging. These topics are discussed in Chapters 7 and 8. Applications for GaAs ICs are covered in Chapters 9 and 10. The first of these chapters is concerned with high speed computer applications; the second addresses military applications. The book concludes with a chapter on radiation effects in GaAs ICs. Scientists, engineers, researchers, device designers, and systems architects will find the book useful.

Fundamentals of Modern VLSI Devices
Fundamentals of Modern VLSI Devices

Author: Yuan Taur

Publisher: Cambridge University Press

Published: 2013-05-02

Total Pages: 0

ISBN-13: 9781107635715

DOWNLOAD EBOOK

Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.

Materials Aspects of GaAs and InP Based Structures
Materials Aspects of GaAs and InP Based Structures

Author: V. Swaminathan

Publisher:

Published: 1991

Total Pages: 630

ISBN-13:

DOWNLOAD EBOOK

Discusses materials aspects of GaAs, InP and related alloys used in the fabricating of photonic and electronic devices. Coverage includes state-of-the-art materials growth and characterization; and physics and chemistry of point defects and dislocations, defects and device reliability.