Very-Long-Wavelength Quantum Well Infrared Photodetector
Very-Long-Wavelength Quantum Well Infrared Photodetector

Author:

Publisher:

Published: 1999

Total Pages: 0

ISBN-13:

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Infrared detector is a very important part of infrared sensor technology. In ballistic missile defense, infrared sensors play an important role in missile seeking, tracking, guiding, discriminating, and intercepting. Tactical applications for endo-atmospheric situation are mostly under a high background (300K), where a high operating temperature above liquid nitrogen (77K) is desired. IR materials such as HgCdTe, InSb, PtSi and quantum well infrared photodetectors (QWIP) are all suitable detector material systems for tactical applications, in which some material systems are more mature than others. For strategic applications, such as exo-atmospheric interceptors and space-based surveillance sensors, the target is usually far away with a cooler temperature, under a cold background. The detection wavelength of the detector under this situation needs to be at very-long-wavelength region (> 12 micrometers) for efficient detection of the cool target. The current state of the art HgCdTe (MCT) based IR detectors have not met all these requirements, and QWIPs provide a useful alternative for VLWIR applications. In this presentation, an overview of VLWIR QWIPs is given and three detailed detector structures and performance are discussed.

Multi-Color Quantum Well Infrared Photodetectors for Mid-, Long-, and Very Long- Wavelength Infrared Applications
Multi-Color Quantum Well Infrared Photodetectors for Mid-, Long-, and Very Long- Wavelength Infrared Applications

Author: Sheng S. Li

Publisher:

Published: 2002

Total Pages: 12

ISBN-13:

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Quantum well infrared photodetectors (QWIPs) have been widely investigated for the 3 - 5 micrometers mid-wavelength infrared (MWIR) and 8 - 12 micrometers long-wavelength infrared (LWIR) atmospheric spectral windows as well as very long wavelength infrared (VLWIR: lambda(sub c)> 14 micrometers) detection in the past decade. The mature III-V compound semiconductor growth technology and the design flexibility of device structures have led to the rapid development of various QWIP structures for infrared focal plane arrays (FPAs) applications. In addition to the single-color QWIP with narrow bandwidth, the multi-color QWIP required for advanced IR sensing and imaging applications have also been emerged in recent years. Using band gap engineering approach, the multi-color (2, 3, and 4- color) QWIPs using multi-stack quantum wells with different well width and depth and voltage-tunable triple-coupled quantum well (TCQW) structure for detection in the MWIR, LWIR, and VLWIR bands have been demonstrated. In this paper, the design, fabrication, and characterization of a voltage-tunable 2-stack 3-color QWIP for MW/LW/LW IR detection and a 3-stack 3-color QWIP for detection in the water, ozone, and CO2 atmospheric blocking bands are depicted.

Long Wavelength Infrared Detectors
Long Wavelength Infrared Detectors

Author: Manijeh Razeghi

Publisher: CRC Press

Published: 2020-03-09

Total Pages: 488

ISBN-13: 1000658651

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This timely work presents a comprehensive overview of the development of new generations of infrared detectors based on artificially synthesized quantum structures. The growth of quantum wells and superlattices is well documents in this volume, as are the principal new superlattice technologies for long wavelength infrared detection. Featuring insightful contributions from researchers working at the "cutting edge" of this exciting field, this volume is sure to become an essential reference for advanced graduate students and researchers alike.

The Physics of Quantum Well Infrared Photodetectors
The Physics of Quantum Well Infrared Photodetectors

Author: K. K. Choi

Publisher: World Scientific

Published: 1997

Total Pages: 436

ISBN-13: 9789810228729

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In the past, infrared imaging has been used exclusively for military applications. In fact, it can also be useful in a wide range of scientific and commercial applications. However, its wide spread use was impeded by the scarcity of the imaging systems and its high cost. Recently, there is an emerging infrared technology based on quantum well intersubband transition in III-V compound semiconductors. With the new technology, these impedances can be eliminated and a new era of infrared imaging is in sight. This book is designed to give a systematic description on the underlying physics of the new detectors and other issues related to infrared managing.

Quantum Well Infrared Photodetectors
Quantum Well Infrared Photodetectors

Author: Harald Schneider

Publisher: Springer

Published: 2006-10-18

Total Pages: 258

ISBN-13: 3540363246

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Addressed to both students as a learning text and scientists/engineers as a reference, this book discusses the physics and applications of quantum-well infrared photodetectors (QWIPs). It is assumed that the reader has a basic background in quantum mechanics, solid-state physics, and semiconductor devices. To make this book as widely accessible as possible, the treatment and presentation of the materials is simple and straightforward. The topics for the book were chosen by the following criteria: they must be well-established and understood; and they should have been, or potentially will be, used in practical applications. The monograph discusses most aspects relevant for the field but omits, at the same time, detailed discussions of specialized topics such as the valence-band quantum wells.

640 X 486 Long-Wavelength Two-Color GaAs/AlGaAs Quantum Well Infrared Photodetector (QWIP) Focal Plane Array Camera
640 X 486 Long-Wavelength Two-Color GaAs/AlGaAs Quantum Well Infrared Photodetector (QWIP) Focal Plane Array Camera

Author:

Publisher:

Published: 2000

Total Pages: 0

ISBN-13:

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We have designed and fabricated an optimized long-wavelength/very-long-wavelength two-color quantum well infrared photodetector (QWIP) device structure. The device structure was grown on a 3-in semi- insulating GaAs substrate by molecular beam epitaxy (MBE) . The wafer was processed into several 640 x 486 format monolithically integrated 8-9 and 14-15 micrometers two-color (or dual wavelength) QWIP focal plane arrays (FPA's). These FPA's were then hybridized to 640 x 486 silicon CMOS readout multiplexers. A thinned (i.e., substrate removed) FPA hybrid was integrated into liquid helium cooled dewar for electrical and optical characterization and to demonstrate simultaneous two-color imagery. The 8-9 micrometers detectors in the FPA have shown background limited performance (BLIP) at 7O K operating temperature for 300 K background with f/2 cold stop. The 14-15 micrometers detectors of the SPA reach BLIP at 40 K operating temperature under the same background conditions. In this paper we discuss the performance of this long-wavelength dualband QWIP SPA in terms of quantum efficiency, detectivity, noise equivalent temperature difference (NE DELTA T), uniformity, and operability.

Advances in Research and Development
Advances in Research and Development

Author:

Publisher: Elsevier

Published: 1995-11-22

Total Pages: 405

ISBN-13: 0080542883

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Physics of Thin Films is one of the longest running continuing series in thin film science, consisting of twenty volumes since 1963. The series contains quality studies of the properties of various thinfilms materials and systems. In order to be able to reflect the development of today's science and to cover all modern aspects of thin films, the series, starting with Volume 20, has moved beyond the basic physics of thin films. It now addresses the most important aspects of both inorganic and organic thin films, in both their theoretical as well as technological aspects. Therefore, in order to reflect the modern technology-oriented problems, the title has been slightly modified from Physics of Thin Films to Thin Films. Discusses the latest research about structure, physics, and infrared photoemissive behavior of heavily doped silicon homojunctions and Ge and GaAs-based alloy junctions Reviews the current status of SiGe/Si quantum wells for infrared detection Discusses key developments in the growing research on quantum-well infrared photodetectors (QWIPs) Reviews Chois development of a family of novel three-terminal, multi-quantum well devices designed to improve high-temperature IR detectivity at long wavelengths Describes recent studies aimed at using multi-quantum well structures to achieve higher performance in solar cell devices based on materials systems