Vapor Growth and Epitaxy covers the proceedings of the Third International Conference on Vapor Growth and Epitaxy, held in Amsterdam, The Netherlands on August 18-21, 1975. This conference highlights the crystal growth aspects of the preparation, characterization, and perfection of thin films of electronic interest. This book is organized into two sections encompassing 54 chapters. The first section considers the fundamental and applied crystal growth studies of silicon, III-V and II-VI compounds, and magnetic garnets. This section also describes the structure of autoepitaxial diamond films and the morphology of single crystals grown from the vapor phase. The second section deals with nucleation and crystal growth kinetic studies of whiskers and the fabrication of solar cells. This section further surveys the equilibrium, kinetics, and epitaxy in the chemical vapor deposition of silicon compounds.
Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).
Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Of interest to researchers, students, and people in the semiconductor industry, this book provides a basic foundation for understanding the technique and the application of OMVPE for the growth of both III-V and II-VI semiconductor materials and the special structures required for device applications. In addition, a comprehensive summary detailing the OMVPE results observed to date in a wide range of III-V and II-VI semiconductors is provided. This includes a comparison of results obtained through the use of other epitaxial techniques such as molecular beam epitaxy (MBE), liquid-phase epitaxy (LPE), and vapor phase epitaxy using halide transport.
This book, a continuation of the series “Advances in Materials Research,” is intended to provide the general basis of the science and technology of crystal growth of silicon for solar cells. In the face of the destruction of the global environment,the degradationofworld-widenaturalresourcesandtheexha- tion of energy sources in the twenty-?rst century, we all have a sincere desire for a better/safer world in the future. In these days, we strongly believe that it is important for us to rapidly developanewenvironment-friendlycleanenergyconversionsystemusingsolar energyastheultimatenaturalenergysource. Forinstance,mostofournatural resources and energy sources will be exhausted within the next 100 years. Speci?cally, the consumption of oil, natural gas, and uranium is a serious problem. Solar energy is the only ultimate natural energy source. Although 30% of total solar energy is re?ected at the earth’s surface, 70% of total solar energy can be available for us to utilize. The available solar energy amounts to severalthousand times larger than the world’s energy consumption in 2000 of about 9,000 Mtoe (M ton oil equivalent). To manage 10% of the world’s energy consumption at 2050 by solar energy, we must manufacture 40 GW solar cells per year continuously for 40 years. The required silicon feedstock is about 400,000 ton per year. We believe that this is an attainable target, since it can be realized by increasing the world production of silicon feedstock by 12times asmuchasthe presentproductionat2005.
This comprehensive handbook covers the diverse aspects of chemical vapor transport reactions from basic research to important practical applications. The book begins with an overview of models for chemical vapor transport reactions and then proceeds to treat the specific chemical transport reactions for the elements, halides, oxides, sulfides, selenides, tellurides, pnictides, among others. Aspects of transport from intermetallic phases, the stability of gas particles, thermodynamic data, modeling software and laboratory techniques are also covered. Selected experiments using chemical vapor transport reactions round out the work, making this book a useful reference for researchers and instructors in solid state and inorganic chemistry.
Crystal Growth, Second Edition deals with crystal growth methods and the relationships between them. The chemical physics of crystal growth is discussed, along with solid growth techniques such as annealing, sintering, and hot pressing; melt growth techniques such as normal freezing, cooled seed method, crystal pulling, and zone melting; solution growth methods; and vapor phase growth. This book is comprised of 15 chapters and opens with a bibliography of books and source material, highlighted by a classification of crystal growth techniques. The following chapters focus on the molecular state of a crystal when in equilibrium with respect to growth or dissolution; the fundamentals of classical and modern hydrodynamics as applied to crystal growth processes; creation, control, and measurement of the environment in which a crystal with desired properties can grow; and growth processes where transport occurs through the vapor phase. The reader is also introduced to crystal growth with molecular beam epitaxy; crystal pulling as a crystal growth method; and zone refining and its applications. This monograph will be of interest to physicists and crystallographers.
The peaceful use of space flight systems for research and technological devel opments in the context of promoting European and international cooperation represents the essential motivation for the programmes of the European Space Agency (ESA). One of ESA's programmes is dedicated to microgravity research, which is now an established discipline in Europe, with a dedicated group of scientists participating. The Challenger disaster has resulted in a serious dis continuity of flight opportunities in the next few years but the forthcoming International Space Station, new launchers and reentry vehicles are expected to provide ample opportunities for microgravity research in the long term. Meanwhile parabolic aircraft flights, sounding rockets as well as the delayed Shuttle-dependent missions, Spacelab D-2, the IML-missions and EURECA I, will be employed to keep microgravity experimenters reasonably busy in the interim period. To prepare the ground for these activities, both regarding research and experiment facilities, an in-depth analysis of the state of the art is an essential requirement at this time. Such an analysis is presented in this volume. It ad dresses all of the topics that have been identified to be of relevance. Besides a presentation of the fundamental aspects justifying microgravity research, the results of experiments already performed are reviewed and recommendations for future activities are made. Close to fifty European scientists have cooper ated in the preparation of this volume and their dedicated and concerted effort is greatly appreciated.
In the last decade or so the growth of single crystals has assumed enormous importance for both academic research, and technology (particu larly in the field of 'electronics'). The range of fields involved is great: from electro-optics to metal corrosion, from semiconductors to magnetic bubble materials-one can add to the list almost indefinitely. However, while the general principles of crystal growth can be applied aImost right across the board, it turns out that the precise way in which one can grow a particular crystal best varies considerably from material to material. This, of course, is to emphasise the obvious; nonetheless, except in specialised papers in the scientific litera ture , little attempt seems to have been made to deal in any detail with the causes of the difficulties in growing particular kinds of materials and with methods of circumventing them. These specialised papers may be inaccessible, and in any case cannot be, usually, very broad in scope or detailed in treatment simply because of the pressure to keep papers short. And unfortunately few specialised monographs seem to have been produced. These points and others similar emerged repeatedly in discussions with crystal growers from aU parts of the World and indicated that there was a need for a publication which would deal in detail with problems and techniques for specialised areas of crystal growth.
Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.
Over the years, many successful attempts have been chapters in this part describe the well-known processes made to describe the art and science of crystal growth, such as Czochralski, Kyropoulos, Bridgman, and o- and many review articles, monographs, symposium v- ing zone, and focus speci cally on recent advances in umes, and handbooks have been published to present improving these methodologies such as application of comprehensive reviews of the advances made in this magnetic elds, orientation of the growth axis, intro- eld. These publications are testament to the grow- duction of a pedestal, and shaped growth. They also ing interest in both bulk and thin- lm crystals because cover a wide range of materials from silicon and III–V of their electronic, optical, mechanical, microstructural, compounds to oxides and uorides. and other properties, and their diverse scienti c and The third part, Part C of the book, focuses on - technological applications. Indeed, most modern ad- lution growth. The various aspects of hydrothermal vances in semiconductor and optical devices would growth are discussed in two chapters, while three other not have been possible without the development of chapters present an overview of the nonlinear and laser many elemental, binary, ternary, and other compound crystals, KTP and KDP. The knowledge on the effect of crystals of varying properties and large sizes. The gravity on solution growth is presented through a c- literature devoted to basic understanding of growth parison of growth on Earth versus in a microgravity mechanisms, defect formation, and growth processes environment.
