Rapid developments in technology have led to enhanced electronic systems and applications. When utilized correctly, these can have significant impacts on communication and computer systems. Transport of Information-Carriers in Semiconductors and Nanodevices is an innovative source of academic material on transport modelling in semiconductor material and nanoscale devices. Including a range of perspectives on relevant topics such as charge carriers, semiclassical transport theory, and organic semiconductors, this is an ideal publication for engineers, researchers, academics, professionals, and practitioners interested in emerging developments on transport equations that govern information carriers.
This introductory textbook covers fundamental quantum mechanics from an application perspective, considering optoelectronic devices, biological sensors and molecular imagers as well as solar cells and field effect transistors. The book provides a brief review of classical and statistical mechanics and electromagnetism, and then turns to the quantum treatment of atoms, molecules, and chemical bonds. Aiming at senior undergraduate and graduate students in nanotechnology related areas like physics, materials science, and engineering, the book could be used at schools that offer interdisciplinary but focused training for future workers in the semiconductor industry and for the increasing number of related nanotechnology firms, and even practicing people could use it when they need to learn related concepts. The author is Professor Dae Mann Kim from the Korea Institute for Advanced Study who has been teaching Quantum Mechanics to engineering, material science and physics students for over 25 years in USA and Asia.
This research and reference text provides up-to-date coverage of the latest research on hot carriers in semiconductors, with a focus on the background, theoretical approaches, measurements and physical understanding required to engage with the field. Pitched at an introductory level, it equips researchers transitioning from optics to fully understand the role of hot carriers in semiconductors, and is a core text for graduate courses in hot carrier phenomena.
Fundamentals of Carrier Transport explores the behavior of charged carriers in semiconductors and semiconductor devices for readers without an extensive background in quantum mechanics and solid-state physics. This second edition contains many new and updated sections, including a completely new chapter on transport in ultrasmall devices and coverage of "full band" transport. Lundstrom also covers both low- and high-field transport, scattering, transport in devices, and transport in mesoscopic systems. He explains in detail the use of Monte Carlo simulation methods and provides many homework exercises along with a variety of worked examples. What makes this book unique is its broad theoretical treatment of transport for advanced students and researchers engaged in experimental semiconductor device research and development.
Annotation David K. Ferry introduces the physics and applications of transport in mesoscopic and nanoscale electronic systems and devices and expands on the behaviour of these novel devices the numerous effects not seen in bulk semiconductors. Including coverage of recent developments, and with a chapter on carbon-based nanoelectronics, this work will provide a good course text for advanced students or as a handy reference for researchers or those entering this interdisciplinary area.
This book examines in detail how a semiconductor device is designed and fabricated to satisfy best the requirements of the target application. The author presents and explains both basic and state-of-art semiconductor industry standards used in large/small signal equivalent circuit models for semiconductor devices that electronics engineers routinely use in their design calculations. The presentation includes detailed, step-by-step information on how a semiconductor device is fabricated, and the very sophisticated supporting technologies used in the process flow. The author also explains how standard laboratory equipment can be used to extract useful performance metrics of a semiconductor device.
This textbook is aimed at second-year graduate students in Physics, Electrical Engineering, or Materials Science. It presents a rigorous introduction to electronic transport in solids, especially at the nanometer scale.Understanding electronic transport in solids requires some basic knowledge of Hamiltonian Classical Mechanics, Quantum Mechanics, Condensed Matter Theory, and Statistical Mechanics. Hence, this book discusses those sub-topics which are required to deal with electronic transport in a single, self-contained course. This will be useful for students who intend to work in academia or the nano/ micro-electronics industry.Further topics covered include: the theory of energy bands in crystals, of second quantization and elementary excitations in solids, of the dielectric properties of semiconductors with an emphasis on dielectric screening and coupled interfacial modes, of electron scattering with phonons, plasmons, electrons and photons, of the derivation of transport equations in semiconductors and semiconductor nanostructures somewhat at the quantum level, but mainly at the semi-classical level. The text presents examples relevant to current research, thus not only about Si, but also about III-V compound semiconductors, nanowires, graphene and graphene nanoribbons. In particular, the text gives major emphasis to plane-wave methods applied to the electronic structure of solids, both DFT and empirical pseudopotentials, always paying attention to their effects on electronic transport and its numerical treatment. The core of the text is electronic transport, with ample discussions of the transport equations derived both in the quantum picture (the Liouville-von Neumann equation) and semi-classically (the Boltzmann transport equation, BTE). An advanced chapter, Chapter 18, is strictly related to the ‘tricky’ transition from the time-reversible Liouville-von Neumann equation to the time-irreversible Green’s functions, to the density-matrix formalism and, classically, to the Boltzmann transport equation. Finally, several methods for solving the BTE are also reviewed, including the method of moments, iterative methods, direct matrix inversion, Cellular Automata and Monte Carlo. Four appendices complete the text.
The use of nanotechnologies continues to grow, as nanomaterials have proven their versatility and use in many different fields and industries within the scientific profession. Using nanotechnology, materials can be made lighter, more durable, more reactive, and more efficient leading nanoscale materials to enhance many everyday products and processes. With many different sizes, shapes, and internal structures, the applications are endless. These uses range from pharmaceutics to materials such as cement or cloth, electronics, environmental sustainability, and more. Therefore, there has been a recent surge of research focused on the synthesis and characterizations of these nanomaterials to better understand how they can be used, their applications, and the many different types. The Research Anthology on Synthesis, Characterization, and Applications of Nanomaterials seeks to address not only how nanomaterials are created, used, or characterized, but also to apply this knowledge to the multidimensional industries, fields, and applications of nanomaterials and nanoscience. This includes topics such as both natural and manmade nanomaterials; the size, shape, reactivity, and other essential characteristics of nanomaterials; challenges and potential effects of using nanomaterials; and the advantages of nanomaterials with multidisciplinary uses. This book is ideally designed for researchers, engineers, practitioners, industrialists, educators, strategists, policymakers, scientists, and students working in fields that include materials engineering, engineering science, nanotechnology, biotechnology, microbiology, drug design and delivery, medicine, and more.
The advent of semiconductor structures whose characteristic dimensions are smaller than the mean free path of carriers has led to the development of novel devices, and advances in theoretical understanding of mesoscopic systems or nanostructures. This book has been thoroughly revised and provides a much-needed update on the very latest experimental research into mesoscopic devices and develops a detailed theoretical framework for understanding their behaviour. Beginning with the key observable phenomena in nanostructures, the authors describe quantum confined systems, transmission in nanostructures, quantum dots, and single electron phenomena. Separate chapters are devoted to interference in diffusive transport, temperature decay of fluctuations, and non-equilibrium transport and nanodevices. Throughout the book, the authors interweave experimental results with the appropriate theoretical formalism. The book will be of great interest to graduate students taking courses in mesoscopic physics or nanoelectronics, and researchers working on semiconductor nanostructures.
