The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2

Author: B.E. Deal

Publisher: Springer Science & Business Media

Published: 2013-11-09

Total Pages: 505

ISBN-13: 1489915885

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The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface
The Physics and Chemistry of SiO2 and the Si-SiO2 Interface

Author: B.E. Deal

Publisher: Springer Science & Business Media

Published: 2013-11-11

Total Pages: 543

ISBN-13: 1489907742

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The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the "International Topical Conference on the Physics of Si02 and its Interfaces" held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.

The Si-SiO2 System
The Si-SiO2 System

Author: P. Balk

Publisher: Elsevier Publishing Company

Published: 1988

Total Pages: 376

ISBN-13:

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The Si-SiO 2 system has been the subject of concentrated research for over 25 years, particularly because of its key role in silicon integrated circuits. However, only a few comprehensive treatises on this field have been published in recent years. This book focuses on the materials science and technology aspects of the system. Its aim is to give a comprehensive overview of the topic, including an extensive list of references giving easy access to the literature. After an introductory chapter which reviews the Si-SiO 2 system from the perspective of other semiconductor-insulator combinations of technical interest, the technology of oxide preparation is discussed. Fundamental questions regarding the structure and chemistry of the interfacial region are then addressed. Two chapters are concerned with system properties: one deals with the physico-chemical, electrical and device-related characteristics and the way these are affected by the technology of oxide preparation; a second chapter focuses on point defects and charge trapping. The book concludes with a broad review of the techniques available for electrical characterization of the system, including the physical background.

The MOS System
The MOS System

Author: Olof Engström

Publisher: Cambridge University Press

Published: 2014-09-25

Total Pages: 369

ISBN-13: 1107005930

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A detailed, up-to-date guide to modern MOS structures, describing key tools, cutting-edge models, novel phenomena and challenges for future development. Abstract concepts are supported by practical examples and presented alongside recent theoretical and experimental results. An ideal companion for researchers, graduate students and industrial development engineers.

CCD Image Sensors in Deep-Ultraviolet
CCD Image Sensors in Deep-Ultraviolet

Author: Flora Li

Publisher: Springer Science & Business Media

Published: 2006-01-05

Total Pages: 231

ISBN-13: 354027412X

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As the deep-ultraviolet (DUV) laser technology continues to mature, an increasing number of industrial and manufacturing applications are emerging. For example, the new generation of semiconductor inspection systems is being pushed to image at increasingly shorter DUV wavelengths to facilitate inspection of deep sub-micron features in integrated circuits. DUV-sensitive charge-coupled device (CCD) cameras are in demand for these applications. Although CCD cameras that are responsive at DUV wavelengths are now available, their long-term stability is still a major concern. This book describes the degradation mechanisms and long-term performance of CCDs in the DUV, along with new results of device performance at these wavelengths.

Solid State Chemical Sensors
Solid State Chemical Sensors

Author: Jiri Janata

Publisher: Academic Press

Published: 2012-12-02

Total Pages: 222

ISBN-13: 0323141013

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Solid State Chemical Sensors reviews the basic chemical and physical principles involved in the construction and operation of solid state sensors. A major portion of the book is devoted to explanation of the basic mechanism of operation and the many actual and potential applications of field effect transistors for gas and solution sensing. This text is comprised of four chapters; the first of which describes the basics of device fabrication. Emphasis is placed on the physical description of semiconductor devices with catalytic metal gates, along with their drawbacks and their promise. The behavior of hydrogen in the Pd-SiO2 system is also considered, and some applications of hydrogen-sensitive transistors, such as smoke detection and biochemical reaction monitoring, are described. The second chapter focuses on chemically sensitive field effect transistors and their thermodynamics, while the third chapter explains the general fabrication procedure for solid state chemical sensors. The final chapter introduces the reader to piezoelectric and pyroelectric chemical sensors, paying particular attention to the sensor nature of piezoelectricity, the piezoelectric gravimetric sensor, and pyroelectric gas analysis. This book is intended to assist electrical engineers in understanding the chemistry involved in the construction and operation of solid state sensors and to educate chemists in solid state science.