Physics for Scientists and Engineers
Physics for Scientists and Engineers

Author: Raymond Serway

Publisher: Cengage Learning

Published: 2013-01-01

Total Pages: 1344

ISBN-13: 9781133953951

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As a market leader, PHYSICS FOR SCIENTISTS AND ENGINEERS is one of the most powerful brands in the physics market. While preserving concise language, state-of-the-art educational pedagogy, and top-notch worked examples, the Ninth Edition highlights the Analysis Model approach to problem-solving, including brand-new Analysis Model Tutorials, written by text co-author John Jewett, and available in Enhanced WebAssign. The Analysis Model approach lays out a standard set of situations that appear in most physics problems, and serves as a bridge to help students identify the correct fundamental principle--and then the equation--to utilize in solving that problem. The unified art program and the carefully thought out problem sets also enhance the thoughtful instruction for which Raymond A. Serway and John W. Jewett, Jr. earned their reputations. The Ninth Edition of PHYSICS FOR SCIENTISTS AND ENGINEERS continues to be accompanied by Enhanced WebAssign in the most integrated text-technology offering available today. Important Notice: Media content referenced within the product description or the product text may not be available in the ebook version.

Quantities, Units and Symbols in Physical Chemistry
Quantities, Units and Symbols in Physical Chemistry

Author: International Union of Pure and Applied Chemistry. Physical and Biophysical Chemistry Division

Publisher: Royal Society of Chemistry

Published: 2007

Total Pages: 240

ISBN-13: 0854044337

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Prepared by the IUPAC Physical Chemistry Division this definitive manual, now in its third edition, is designed to improve the exchange of scientific information among the readers in different disciplines and across different nations. This book has been systematically brought up to date and new sections added to reflect the increasing volume of scientific literature and terminology and expressions being used. The Third Edition reflects the experience of the contributors with the previous editions and the comments and feedback have been integrated into this essential resource. This edition has been compiled in machine-readable form and will be available online.

Semiconductor Material and Device Characterization
Semiconductor Material and Device Characterization

Author: Dieter K. Schroder

Publisher: John Wiley & Sons

Published: 2015-06-29

Total Pages: 800

ISBN-13: 0471739065

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This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.

High Energy Cosmic Rays
High Energy Cosmic Rays

Author: Todor Stanev

Publisher: Springer Science & Business Media

Published: 2010-03-10

Total Pages: 334

ISBN-13: 3540851488

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Offers an accessible text and reference (a cosmic-ray manual) for graduate students entering the field and high-energy astrophysicists will find this an accessible cosmic-ray manual Easy to read for the general astronomer, the first part describes the standard model of cosmic rays based on our understanding of modern particle physics. Presents the acceleration scenario in some detail in supernovae explosions as well as in the passage of cosmic rays through the Galaxy. Compares experimental data in the atmosphere as well as underground are compared with theoretical models

Thermonuclear Supernovae
Thermonuclear Supernovae

Author: P. Ruiz-Lapuente

Publisher: Springer Science & Business Media

Published: 1997

Total Pages: 920

ISBN-13: 9780792343592

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All theoretical and observational topics relevant to the understanding of the thermonuclear (Type Ia) supernova phenomenon are thoroughly and consistently reviewed by a panel including the foremost experts in the field. The book covers all aspects, ranging from the observations of SNe Ia at all stages and all wavelengths to the 2D and 3D modelling of thermonuclear flames in very dense plasmas. Scenarios for close binary evolution leading to SNe Ia are discussed. Particular emphasis is placed on the homogeneity vs. diversity of SNe Ia and on their use as standard candles to measure cosmological parameters. The book reflects the recent and very significant progress made in both the modelling of the explosions and in the observational field.

The Nucleus
The Nucleus

Author: F.D. Smit

Publisher: Springer Science & Business Media

Published: 1999

Total Pages: 540

ISBN-13: 9780306463020

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Proceedings of the International Conference on The Nucleus: New Physics for the New Millennium, held January 18-22, 1999, at the National Accelerator Centre, Faure, South Africa