Engineering materials with desirable physical and technological properties requires understanding and predictive capability of materials behavior under varying external conditions, such as temperature and pressure. This immediately brings one face to face with the fundamental difficulty of establishing a connection between materials behavior at a microscopic level, where understanding is to be sought, and macroscopic behavior which needs to be predicted. Bridging the corresponding gap in length scales that separates the ends of this spectrum has been a goal intensely pursued by theoretical physicists, experimentalists, and metallurgists alike. Traditionally, the search for methods to bridge the length scale gap and to gain the needed predictive capability of materials properties has been conducted largely on a trial and error basis, guided by the skill of the metallurgist, large volumes of experimental data, and often ad hoc semi phenomenological models. This situation has persisted almost to this day, and it is only recently that significant changes have begun to take place. These changes have been brought about by a number of developments, some of long standing, others of more recent vintage.
A thorough exploration of the atomic structures and properties of the essential engineering interfaces—an invaluable resource for students, teachers, and professionals The most up-to-date, accessible guide to solid-vapor, solid-liquid, and solid-solid phase transformations, this innovative book contains the only unified treatment of these three central engineering interfaces. Employing a simple nearest-neighbor broken-bond model, Interfaces in Materials focuses on metal alloys in a straightforward approach that can be easily extended to all types of interfaces and materials. Enhanced with nearly 300 illustrations, along with extensive references and suggestions for further reading, this book provides: A simple, cohesive approach to understanding the atomic structure and properties of interfaces formed between solid, liquid, and vapor phases Self-contained discussions of each interface—allowing separate study of each phase transformation A comparative look at the different interfaces, including atomic structure and crystallography; anisotropy, roughening, and melting; interfacial stability and segregation; continuous and ledge growth models; and atomistic modeling An analysis of nearest-neighbor broken-bond results against thermodynamic and kinetic descriptions of the interfaces Problem sets at the end of each chapter, emphasizing the key concepts detailed in the text Spanning the fields of chemical, electrical and computer engineering, materials science, solid-state physics, and microscopy, Interfaces in Materials bridges a major gap in the literature of surface and interface science.
This collection presents an exchange of ideas among scientists and engineers about the economic and safety concerns surrounding environmentally induced materials problems which lead to nuclear power plant outages. Scientists and engineers concerned with the environmental degradation processes (corrosion, mechanical, and radiation effects) present their latest results on such topics as life extension/relicensing and materials problems associated with spent fuel storage and radioactive waste disposal. This collection will be of interest to utility engineers, reactor vendor engineers, plant architect engineers, researchers concerned with materials degradation, and consultants involved in design, construction, and operation of water reactors.
This volume reviews the latest understanding of the behavior and roles of oxygen in silicon, which will carry the field into the ULSI era from the experimental and theoretical points of view. The fourteen chapters, written by recognized authorities representing industrial and academic institutions, cover thoroughly the oxygen related phenomena from the crystal growth to device fabrication processes, as well as indispensable diagnostic techniques for oxygen. - Comprehensive study of the behavior of oxygen in silicon - Discusses silicon crystals for VLSI and ULSI applications - Thorough coverage from crystal growth to device fabrication - Edited by technical experts in the field - Written by recognized authorities from industrial and academic institutions - Useful to graduate students, scientists in other disciplines, and active participants in the arena of silicon-based microelectronics research - 297 original line drawings