Strained Silicon/silicon-germanium Heterostructure Complimentary Metal Oxide Semiconductor Devices
Author: Rameshwari Chinchani
Publisher:
Published: 2004
Total Pages: 140
ISBN-13:
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Author: Rameshwari Chinchani
Publisher:
Published: 2004
Total Pages: 140
ISBN-13:
DOWNLOAD EBOOKAuthor: Kelvin Sian Kiat Kwa
Publisher:
Published: 2004
Total Pages: 176
ISBN-13:
DOWNLOAD EBOOKAuthor: Suresh C. Jain
Publisher:
Published: 1994
Total Pages: 330
ISBN-13:
DOWNLOAD EBOOKBiaxial strain in coherent GeSi layers grown on Si substrates provides a powerful tool for tailoring bandgaps and band offsets. Extremely high electron and hole mobilities have been obtained in modulation-doped GeSi strained layer heterostructures. Ultra-high-speed Heterojunction Bipolar Transistors and MODFETs, and long wavelength (1 to 20 micrometre) IR Detectors have been fabricated using these layers. Quantum wells, ultra-thin period superlattices, and quantum dots can also be fabricated using the strained layers. These devices were previously implemented using III-V semiconductors. Now they can be fabricated using existing Si technology, which is mature and reliable. GeSi strained layer technology has made it possible to manufacture monolithic Si integrated circuits containing heterojunction devices.
Author: Gudrun Kissinger
Publisher: CRC Press
Published: 2014-12-09
Total Pages: 424
ISBN-13: 1466586656
DOWNLOAD EBOOKDespite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon-germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevic
Author: Cor Claeys
Publisher: Elsevier
Published: 2011-07-28
Total Pages: 476
ISBN-13: 008047490X
DOWNLOAD EBOOKGermanium is a semiconductor material that formed the basis for the development of transistor technology. Although the breakthrough of planar technology and integrated circuits put silicon in the foreground, in recent years there has been a renewed interest in germanium, which has been triggered by its strong potential for deep submicron (sub 45 nm) technologies. Germanium-Based technologies: From Materials to Devices is the first book to provide a broad, in-depth coverage of the field, including recent advances in Ge-technology and the fundamentals in material science, device physics and semiconductor processing. The contributing authors are international experts with a world-wide recognition and involved in the leading research in the field. The book also covers applications and the use of Ge for optoelectronics, detectors and solar cells. An ideal reference work for students and scientists working in the field of physics of semiconductor devices and materials, as well as for engineers in research centres and industry. Both the newcomer and the expert should benefit from this unique book. State-of-the-art information available for the first time as an all-in-source Extensive reference list making it an indispensable reference book Broad coverage from fundamental aspects up to industrial applications
Author: Peter John Bjeletich
Publisher:
Published: 2004
Total Pages: 480
ISBN-13:
DOWNLOAD EBOOKAuthor: Erich Kasper
Publisher: Institution of Electrical Engineers
Published: 1995
Total Pages: 0
ISBN-13: 9780852968260
DOWNLOAD EBOOKThis volume systematically evaluates and reviews the properties of silicon germanium within a structured framework, relating them where appropriate to stoichiometry and strain. The invited contributions include concise discussion and expert guidance to the reference literature.
Author: Robert K. Willardson
Publisher:
Published: 1966
Total Pages:
ISBN-13: 9780127521169
DOWNLOAD EBOOKAuthor: Erich Kasper
Publisher: Inst of Engineering & Technology
Published: 2000
Total Pages: 358
ISBN-13: 9780852967836
DOWNLOAD EBOOKThe industrial relevance of SiGe has increased dramatically in the last few years with the manufacture of heterojunction bipolar circuits for the commercial wireless and datacomms markets by IBM and TEMIC. Major high technology companies see the development and use of SiGe as an important part of their strategy, so that there is a strong impetus to improve its characterization and exploitation. This liberally illustrated and fully indexed volume distills in a homogeneous, structured way the expertise of some 40 invited authors to comprehensively review the whole range of properties as well as SiGe; C, self-assembled nanostructures, quantum effects and device trends.
Author: Roy Szweda
Publisher: Elsevier Science Limited
Published: 2002
Total Pages: 402
ISBN-13: 1856173968
DOWNLOAD EBOOKThe first edition of Silicon Germanium Materials & Devices - A Market & Technology Overview to 2006 examines the development of the silicon germanium business over a six-year period 2001 to 2006. It analyses the trends in markets, technologies and industry structure and profiles all the major players. It is specifically aimed at users and manufacturers of substrates, epiwafers, equipment and devices. The analysis includes a competitive assessment of the market of silicon germanium vs. gallium arsenide, indium phosphide vs. other forms of silicon. Silicon Germanium Materials & Devices - A Market & Technology Overview to 2006 is designed to assist with business plans, R&D and manufacturing strategies. It will be an indispensable aid for managers responsible for business development, technology assessment and market research. The report examines the rapid development of silicon germanium from an R&D curiosity to production status. An extensive treatment from materials through processes to devices and applications it encapsulates the entire silicon germanium business of today and assesses future directions. For a PDF version of the report please call Tina Enright on +44 (0) 1865 843008 for price details.