State-of-the-Art Program on Compound Semiconductors 52 (SOTAPOCS 52)
State-of-the-Art Program on Compound Semiconductors 52 (SOTAPOCS 52)

Author: M. E. Overberg

Publisher: The Electrochemical Society

Published: 2010-10

Total Pages: 232

ISBN-13: 1566778328

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The papers included in this issue of ECS Transactions were originally presented in the symposium ¿State-of-the-Art Program on Compound Semiconductors 52 (SOTAPOCS 52)¿, held during the 218th meeting of The Electrochemical Society, in Las Vegas, Nevada from October 10 to 15, 2010.

State-of-the-Art Program on Compound Semiconductors 46 (SOTAPOCS 46) -and- Processes at the Semiconductor/Solution Interface 2
State-of-the-Art Program on Compound Semiconductors 46 (SOTAPOCS 46) -and- Processes at the Semiconductor/Solution Interface 2

Author: C. O'Dwyer

Publisher: The Electrochemical Society

Published: 2007

Total Pages: 647

ISBN-13: 1566775515

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Section 1 addresses the most recent developments in processes at the semiconductor-solution interface include etching, oxidation, passivation, film growth, porous semiconductor formation, electrochemical, photoelectrochemical, electroluminescence and photoluminescence processes, electroanalytical measurements and related topics on both elemental and compound semiconductors. Section 2 addresses the most recent developments in compound semiconductors encompassing advanced devices, materials growth, characterization, processing, device fabrication, reliability, and related topics.

State-of-the-Art Program on Compound Semiconductors 51 (SOTAPOCS 51) and Wide-Bandgap Semiconductor Materials and Devices 10
State-of-the-Art Program on Compound Semiconductors 51 (SOTAPOCS 51) and Wide-Bandgap Semiconductor Materials and Devices 10

Author: E. Stokes

Publisher: The Electrochemical Society

Published: 2009-09

Total Pages: 140

ISBN-13: 1566777496

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The papers included in this issue of ECS Transactions were originally presented in the joint symposium ¿State-of-the-Art Program on Compound Semiconductors 51 (SOTAPOCS 51) and Wide-Bandgap Semiconductor Materials and Devices 10¿, held during the 216th meeting of The Electrochemical Society, in Vienna, Austria from October 4 to 9, 2009.