Silicon Carbide Amorphization by Electron Irradiation
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Published: 2001
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DOWNLOAD EBOOKObservations made more than ten years ago showed that SiC could be made amorphous at cryogenic temperatures by in-situ 300kV electron irradiation. However, high voltage electron microscope (HVEM) results indicate a threshold voltage of 725 kV for amorphization of SiC at 140 K. In addition, a recent review exposes the considerable uncertainty in the literature regarding displacement energies for SiC. Therefore, further experiments have been performed in a Philips CM30 (LaB[sub 6] cathode) with a Gatan double-tilt cooling holder in an attempt to determine the threshold voltage for amorphization at[approximately] 140 K. Sintered[alpha]-SiC (defected 6H polytype), beam direction B=11[bar 2]0, and probes containing[approximately] 75 nA in[approximately] 0.5[micro]m, were used. Amorphization occurred in