Silicon Carbide 2004 - Materials, Processing and Devices:
Silicon Carbide 2004 - Materials, Processing and Devices:

Author: Michael Dudley

Publisher: Cambridge University Press

Published: 2014-06-05

Total Pages: 340

ISBN-13: 9781107409200

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Silicon carbide (SiC) is a wide-bandgap semiconductor that can operate at temperatures well above 300ºC, where silicon cannot perform. In addition, due to a high thermal conductivity equal to copper at room temperature, SiC is an ideal candidate for operation in harsh environments and at high-power levels. Rapid advances in SiC materials and devices have recently resulted in implementation of SiC-based electronic systems, and the impact of these devices is expected to significantly increase in the next several years. This book documents the most recent results on growth of bulk and epitaxial layers, physical and structural properties, process technology, and device development obtained since the 10th International Conference on Silicon Carbide and Related Materials 2003 (ICSCRM2003) held in Lyon, France. Extended defects in silicon carbide are highlighted. The nature of defects induced by forward biasing of bipolar devices, as well as methods to suppress the degradation, are addressed.

Silicon Carbide, Volume 2
Silicon Carbide, Volume 2

Author: Peter Friedrichs

Publisher: John Wiley & Sons

Published: 2011-04-08

Total Pages: 520

ISBN-13: 9783527629084

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Silicon Carbide - this easy to manufacture compound of silicon and carbon is said to be THE emerging material for applications in electronics. High thermal conductivity, high electric field breakdown strength and high maximum current density make it most promising for high-powered semiconductor devices. Apart from applications in power electronics, sensors, and NEMS, SiC has recently gained new interest as a substrate material for the manufacture of controlled graphene. SiC and graphene research is oriented towards end markets and has high impact on areas of rapidly growing interest like electric vehicles. This volume is devoted to high power devices products and their challenges in industrial application. Readers will benefit from reports on development and reliability aspects of Schottky barrier diodes, advantages of SiC power MOSFETs, or SiC sensors. The authors discuss MEMS and NEMS as SiC-based electronics for automotive industry as well as SiC-based circuit elements for high temperature applications, and the application of transistors in PV-inverters. The list of contributors reads like a "Who's Who" of the SiC community, strongly benefiting from collaborations between research institutions and enterprises active in SiC crystal growth and device development. Among the former are CREE Inc. and Fraunhofer ISE, while the industry is represented by Toshiba, Nissan, Infineon, NASA, Naval Research Lab, and Rensselaer Polytechnic Institute, to name but a few.

Silicon Carbide 2002 - Materials, Processing and Devices: Volume 742
Silicon Carbide 2002 - Materials, Processing and Devices: Volume 742

Author: Stephen E. Saddow

Publisher:

Published: 2003-03-25

Total Pages: 432

ISBN-13:

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Advances in silicon carbide materials, processing and device design have recently resulted in implementation of SiC-based electronic systems and offer great promise in high-voltage, high-temperature and high-frequency applications. This volume focuses on new developments in basic science of SiC materials as well as rapidly maturing device technologies. The challenges in this field include understanding and decreasing defect densities in bulk SiC crystals, controlling morphology and residual impurities in epilayers, optimization of implant activation and oxide-SiC interfaces, and developing novel device structures. This book brings together the crystal growers, physicists and device experts needed to continue the rapid pace of silicon-carbide-based technology. Topics include: epitaxial growth; characterization/defects; MOS technology; SiC processing and devices.

Materials for Photovoltaics: Volume 836
Materials for Photovoltaics: Volume 836

Author: Materials Research Society. Meeting

Publisher:

Published: 2005-09-09

Total Pages: 328

ISBN-13:

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Solar-cell performance is critically dependent on the optical and electrical properties of their constituent materials. In order to obtain significant improvements in performance for future generations of photovoltaic devices, it will be necessary to either improve the properties of existing materials or engineer new materials and device structures. This book focuses on materials issues and advances for photovoltaics. Topics include: dye-sensitized solar cells; nanoparticle/hybrid solar cells; polymer-based devices; small molecule-based devices; III-V semiconductors; II-VI semiconductors and transparent conducting oxides and silicon thin films.

High-Mobility Group-IV Materials and Devices: Volume 809
High-Mobility Group-IV Materials and Devices: Volume 809

Author: Materials Research Society. Meeting

Publisher:

Published: 2004-08-18

Total Pages: 328

ISBN-13:

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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This book, first published in 2004, brings together researchers interested in strained SiGe, strain-relaxed buffers, strained Si on bulk Si and on SOI, SiGe on SOI, Ge substrates, and Ge on insulator.