Si Front End Processing - Physics and Technology II of Dopant-Defect Interactions II: Volume 610

Si Front End Processing - Physics and Technology II of Dopant-Defect Interactions II: Volume 610

Author: Aditya Agarwal

Publisher:

Published: 2001-04-09

Total Pages: 448

ISBN-13:

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This proceedings of the April 2000 symposium deals with formation of electrical junctions in the front-end processing of devices for the approaching end-of-the-roadmap. The 60 papers address 2D dopant characterization, ion implantation and shallow junction technology, group III diffusion and activation, carbon diffusion and activation, group V diffusion and activation, vacancy-type defects, regrown amorphous layers, and structure and properties of point and extended defects. Topics include ultra-shallow junction formation and gate activation in deep-submicron CMOS, low energy implantation of boron with decaborane ions, modeling ramp rate effects on shallow junction formation, clustering equilibrium and deactivation kinetics in As doped silicon, and atomistic modeling of complex silicon processing scenarios. c. Book News Inc.


High Purity Silicon VI

High Purity Silicon VI

Author: Electrochemical Society. Meeting

Publisher: The Electrochemical Society

Published: 2000

Total Pages: 720

ISBN-13: 9781566772846

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"... papers that were presented at the Sixth Symposium on High Purity Silicon held in Phoenix, Arizona at the 198th Meeting of the Electrochemical Society, October 22-27, 2000."--Preface.


Si Front-End Processing: Volume 669

Si Front-End Processing: Volume 669

Author: Erin C. Jones

Publisher:

Published: 2001-12-14

Total Pages: 362

ISBN-13:

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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.


Simulation of Semiconductor Processes and Devices 2001

Simulation of Semiconductor Processes and Devices 2001

Author: Dimitris Tsoukalas

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 463

ISBN-13: 3709162440

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This volume contains the Proceedings of the International Conference on Simulation of Semiconductor Devices and Processes, SISPAD 01, held on September 5–7, 2001, in Athens. The conference provided an open forum for the presentation of the latest results and trends in process and device simulation. The trend towards shrinking device dimensions and increasing complexity in process technology demands the continuous development of advanced models describing basic physical phenomena involved. New simulation tools are developed to complete the hierarchy in the Technology Computer Aided Design simulation chain between microscopic and macroscopic approaches. The conference program featured 8 invited papers, 60 papers for oral presentation and 34 papers for poster presentation, selected from a total of 165 abstracts from 30 countries around the world. These papers disclose new and interesting concepts for simulating processes and devices.


Nucleation and Growth Processes in Materials

Nucleation and Growth Processes in Materials

Author: Antonios Gonis

Publisher:

Published: 2000

Total Pages: 474

ISBN-13:

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One of the goals of materials science is to design alloys with pre-specified desirable technological properties. To achieve this goal, it is necessary to have a thorough understanding of the fundamental mechanisms underlying materials behavior. In particular, one must understand the effects on alloy properties caused by intentional changes in concentration and how the combinations of temperature, time and uncontrollable foreign impurities affect microstructure. In addition to the equilibrium phase information contained in phase diagrams, nonequilibrium dynamic processes and metastable phases are known to be crucial in determining materials properties. This volume brings together researchers working on various aspects of nonequilibrium processes in materials to discuss current research issues and to provide guidelines for future work. Particular attention was paid to understanding particle nucleation and growth, both experimentally and theoretically, solid-state reactions, nanosystems, liquid-solid transformations, and solidification and amorphization. On the theoretical side, fundamental principles governing nucleation and growth, and related phenomena such as coarsening and Ostwald ripening, are discussed. Progress is also reported on the phase field method and on Monte Carlo simulations.


GaN and Related Alloys - 1999: Volume 595

GaN and Related Alloys - 1999: Volume 595

Author: Thomas H. Myers

Publisher:

Published: 2000-05-05

Total Pages: 1070

ISBN-13:

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This book on gallium nitride (GaN) and associated materials focuses on advances in basic science, as well as the rapidly maturing technologies involving blue/green light emitters, detectors and high-power electronics. A highlight is a report on wide-bandgap semiconductor research done in Europe. Also reported is the commercialization of a laser operating at 405nm wavelength with a 4000-hour device lifetime. At 450nm emission wavelength, significant reductions in lifetime were found, and are believed to arise from nonideal properties of the InGaN alloy used in the active layer of the device. Additional topics include: the significant success of transistors for microwave applications; improvements in the epitaxy of GaN, using both selective area growth techniques (lateral epitaxy overgrowth) and introducing low-temperature intralayers in the films; advances in both molecular beam epitaxy and metal-organic vapor phase epitaxy, including several studies of quantum dot formation in strained alloys and improvements in hydride vapor phase epitaxy, particularly for providing very thick films.