Si Front End Processing - Physics and Technology II of Dopant-Defect Interactions II:
Si Front End Processing - Physics and Technology II of Dopant-Defect Interactions II:

Author: Aditya Agarwal

Publisher: Cambridge University Press

Published: 2014-06-05

Total Pages: 438

ISBN-13: 9781107413177

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This book, first published in 2001, focuses on the formation of electrical junctions in the front-end processing of devices sized for the approaching end-of-the-roadmap. To address these issues researchers come together to share results and physical models that describe phenomena which control the three-dimensional dopant profile. Highlights focus on future issues in device scaling and how they can be quantitatively linked with the requirements placed on dopant profile and junction formation. Emphasis is on shallow junction depth and high-concentration activation as well as the extremely tight limits on junction abruptness. An excellent overview of the field of implant and annealing in silicon devices is also provided. Topics include: the challenges of device scaling; 2-D dopant characterization; Si front-end processing; ion implantation and shallow junction technology; group III dopant diffusion and activation; carbon diffusion and interaction with point defects; group V diffusion and activation; vacancy-type defects - interaction and characterization; regrown amorphous layers and structure and properties of point and extended defects.

Si Front End Processing - Physics and Technology II of Dopant-Defect Interactions II: Volume 610
Si Front End Processing - Physics and Technology II of Dopant-Defect Interactions II: Volume 610

Author: Aditya Agarwal

Publisher:

Published: 2001-04-09

Total Pages: 448

ISBN-13:

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This proceedings of the April 2000 symposium deals with formation of electrical junctions in the front-end processing of devices for the approaching end-of-the-roadmap. The 60 papers address 2D dopant characterization, ion implantation and shallow junction technology, group III diffusion and activation, carbon diffusion and activation, group V diffusion and activation, vacancy-type defects, regrown amorphous layers, and structure and properties of point and extended defects. Topics include ultra-shallow junction formation and gate activation in deep-submicron CMOS, low energy implantation of boron with decaborane ions, modeling ramp rate effects on shallow junction formation, clustering equilibrium and deactivation kinetics in As doped silicon, and atomistic modeling of complex silicon processing scenarios. c. Book News Inc.

Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon
Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon

Author: Peter Pichler

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 576

ISBN-13: 3709105978

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This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.

Si Front-End Processing: Volume 669
Si Front-End Processing: Volume 669

Author: Erin C. Jones

Publisher:

Published: 2001-12-14

Total Pages: 362

ISBN-13:

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The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Simulation of Semiconductor Processes and Devices 2007
Simulation of Semiconductor Processes and Devices 2007

Author: Tibor Grasser

Publisher: Springer Science & Business Media

Published: 2007-11-18

Total Pages: 472

ISBN-13: 3211728619

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This volume contains the proceedings of the 12th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2007, held September 2007 in Vienna, Austria. It provides a global forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance.

Si Front-End Processing: Volume 568
Si Front-End Processing: Volume 568

Author: Hans-Joachim L. Gossmann

Publisher: Cambridge University Press

Published: 1999-07-26

Total Pages: 0

ISBN-13: 9781558994751

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Electrical device parameters are largely set by the three-dimensional dopant profiles created during front-end processing. Ion implantation, silicidation and annealing treatments in various ambients influence the Si native point-defect populations in characteristic ways, so that the final dopant profile of a device is the result of complex interactions between dopant atoms, Si point defects and the various interfaces. These interactions can no longer be assumed to be at equilibrium and one-dimensional. This makes computer-aided technology development imperative, requiring accurate, truly predictive, physics-based process simulation tools. The reliability of these tools depends, in turn, on data from laboratory-scale experiments to motivate and validate the physical models. This book reviews developments in experiment and modelling, and identifies key issues for future research. It broadens the focus of earlier symposia from strictly TCAD issues, to include sections on 2-D profiling, SiGe and nitrogen, and by including a joint session with the 'Advanced Semiconductor Wafer Engineering' symposium titled Mechanisms of Point-Defect Interaction and Diffusion.