This new edition of Infrared and Terahertz Detectors provides a comprehensive overview of infrared and terahertz detector technology, from fundamental science to materials and fabrication techniques. It contains a complete overhaul of the contents including several new chapters and a new section on terahertz detectors and systems. It includes a new tutorial introduction to technical aspects that are fundamental for basic understanding. The other dedicated sections focus on thermal detectors, photon detectors, and focal plane arrays.
The development of integrated silicon photonic circuits has recently been driven by the Internet and the push for high bandwidth as well as the need to reduce power dissipation induced by high data-rate signal transmission. To reach these goals, efficient passive and active silicon photonic devices, including waveguide, modulators, photodetectors,
Every bit of information that circulates the internet across the globe is a pulse of light, that at some point will need to be converted to an electric signal in order to be processed by the electronic circuitry in our data centers, computers, and cell phones. Photodetectors (PD's) perform this conversion with ultra high speed and efficiency, in addition to being ubiquitously present in many other devices ranging from the mundane TV remote controls, to ultra high resolution instrumentation used in Laser Interferometer Gravitational Wave Observatory (LIGO) that reach the edge of the universe and measure gravitational waves. The second edition of "Photodetectors" fully updates the popular first edition with updated information covering the state-of-the-art in modern photodetectors. The 2nd edition starts with basic metrology of photodetectors and common figures-of-merit to compare various devices. It follows with chapters that discuss single-photon detection with Avalanche Photodiodes; organic photodetectors that can be inkjet printed; and silicon-germanium PDs popular in burgeoning field of Silicon Photonics. Internationally recognized experts contribute chapters on one-dimensional, nanowire, PDs as well as high speed zero-dimensional, quantum dot, versions that increase the spectral span as well as speed and sensitivity of PDs and can be produced on various substrates. Solar-blind PDs that operate in harsh environments such as deep space, or rocket engines, are reviewed and new devices in GaN technology . Novel Plasmonic PDs, as well as devices which employ micro-plasma of confined charge in order to make devices that overcome speed limitation of transfer of electronic charge, are covered in other chapters. Using different, novel technologies, CMOS compatible devices are described in two chapters, and ultra high speed PDs that use low-temperature-grown GaAs (LT-GaAs) to detect fast THz signals are reviewed in another chapter. Photodetectors used in application areas of Silicon-Photonics and Microwave-Photonics are reviewed in final chapters of this book. All chapters are of a review nature, providing a perspective of the field before concentrating on particular advancements. As such, the book should appeal to a wide audience that ranges from those with general interest in the topic, to practitioners, graduate students and experts who are interested in the state-of-the-art in photodetection. - Addresses various photodetector devices from ultra high speed to ultra high sensitivity, capable of operation in harsh environments - Considers a range of applications for this important technology, including silicon photonics and photonic integrated circuits - Includes discussions of detectors based on reduced dimensional systems such as quantum wells, nanowires, and quantum dots, as well as travelling wave, and plasmonic detectors
Revised and expanded for this new edition, Smart CMOS Image Sensors and Applications, Second Edition is the only book available devoted to smart CMOS image sensors and applications. The book describes the fundamentals of CMOS image sensors and optoelectronic device physics, and introduces typical CMOS image sensor structures, such as the active pixel sensor (APS). Also included are the functions and materials of smart CMOS image sensors and present examples of smart imaging. Various applications of smart CMOS image sensors are also discussed. Several appendices supply a range of information on constants, illuminance, MOSFET characteristics, and optical resolution. Expansion of smart materials, smart imaging and applications, including biotechnology and optical wireless communication, are included. Features • Covers the fundamentals and applications including smart materials, smart imaging, and various applications • Includes comprehensive references • Discusses a wide variety of applications of smart CMOS image sensors including biotechnology and optical wireless communication • Revised and expanded to include the state of the art of smart image sensors
Mid-infrared Optoelectronics: Materials, Devices, and Applications addresses the new materials, devices and applications that have emerged over the last decade, along with exciting areas of research. Sections cover fundamentals, light sources, photodetectors, new approaches, and the application of mid-IR devices, with sections discussing LEDs, laser diodes, and quantum cascade lasers, mid-infrared optoelectronics, emerging research areas, dilute bismide and nitride alloys, Group-IV materials, gallium nitride heterostructures, and new nonlinear materials. Finally, the most relevant applications of mid-infrared devices are reviewed in industry, gas sensing, spectroscopy, and imaging. This book presents a key reference for materials scientists, engineers and professionals working in R&D in the area of semiconductors and optoelectronics. - Provides a comprehensive overview of mid-infrared photodetectors and light sources and the latest materials and devices - Reviews emerging areas of research in the field of mid-infrared optoelectronics, including new materials, such as wide bandgap materials, chalcogenides and new approaches, like heterogeneous integration - Includes information on the most relevant applications in industry, like gas sensing, spectroscopy and imaging
Silicon (Si) technologies provide an excellent platform for the design of microsystems where photonic and microelectronic functionalities are monolithically integrated on the same substrate. In recent years, a variety of passive and active Si photonic devices have been developed, and among them, photodetectors have attracted particular interest from the scientific community. Si photodiodes are typically designed to operate at visible wavelengths, but, unfortunately, their employment in the infrared (IR) range is limited due to the neglectable Si absorption over 1100 nm, even though the use of germanium (Ge) grown on Si has historically allowed operations to be extended up to 1550 nm. In recent years, significant progress has been achieved both by improving the performance of Si-based photodetectors in the visible range and by extending their operation to infrared wavelengths. Near-infrared (NIR) SiGe photodetectors have been demonstrated to have a “zero change” CMOS process flow, while the investigation of new effects and structures has shown that an all-Si approach could be a viable option to construct devices comparable with Ge technology. In addition, the capability to integrate new emerging 2D and 3D materials with Si, together with the capability of manufacturing devices at the nanometric scale, has led to the development of new device families with unexpected performance. Accordingly, this Special Issue of Micromachines seeks to showcase research papers, short communications, and review articles that show the most recent advances in the field of silicon photodetectors and their respective applications.
Handbook of Optoelectronics offers a self-contained reference from the basic science and light sources to devices and modern applications across the entire spectrum of disciplines utilizing optoelectronic technologies. This second edition gives a complete update of the original work with a focus on systems and applications. Volume I covers the details of optoelectronic devices and techniques including semiconductor lasers, optical detectors and receivers, optical fiber devices, modulators, amplifiers, integrated optics, LEDs, and engineered optical materials with brand new chapters on silicon photonics, nanophotonics, and graphene optoelectronics. Volume II addresses the underlying system technologies enabling state-of-the-art communications, imaging, displays, sensing, data processing, energy conversion, and actuation. Volume III is brand new to this edition, focusing on applications in infrastructure, transport, security, surveillance, environmental monitoring, military, industrial, oil and gas, energy generation and distribution, medicine, and free space. No other resource in the field comes close to its breadth and depth, with contributions from leading industrial and academic institutions around the world. Whether used as a reference, research tool, or broad-based introduction to the field, the Handbook offers everything you need to get started. (The previous edition of this title was published as Handbook of Optoelectronics, 9780750306461.) John P. Dakin, PhD, is professor (emeritus) at the Optoelectronics Research Centre, University of Southampton, UK. Robert G. W. Brown, PhD, is chief executive officer of the American Institute of Physics and an adjunct full professor in the Beckman Laser Institute and Medical Clinic at the University of California, Irvine.
