This third edition has been thoroughly revised and updated. In particular it now includes an extensive discussion of the band lineup at semiconductor interfaces. The unifying concept is the continuum of interface-induced gap states.
Semiconductor Surfaces and Interfaces deals with structural and electronic properties of semiconductor surfaces and interfaces. The first part introduces the general aspects of space-charge layers, of clean-surface and adatom-included surfaces states, and of interface states. It is followed by a presentation of experimental results on clean and adatom-covered surfaces which are explained in terms of simple physical and chemical concepts and models. Where available, results of more refined calculations are considered. A final chapter is devoted to the band lineup at semiconductor interfaces.
Semiconductor Surfaces and Interfaces deals with structural and electronic properties of semiconductor surfaces and interfaces. The first part introduces the general aspects of space-charge layers, of clean-surface and adatom-induced surfaces states, and of interface states. It is followed by a presentation of experimental results on clean and adatom-covered surfaces which are explained in terms of simple physical and chemical concepts. Where available, results of more refined calculations are considered. This third edition has been thoroughly revised and updated. In particular it now includes an extensive discussion of the band lineup at semiconductor interfaces. The unifying concept is the continuum of interface-induced gap states.
"Surfaces and Interfaces of Solids" emphasizes both experimental and theoretical aspects of surface and interface physics. Beside the techniques of preparing well-defined solid surfaces and interfaces basic models for the description of structural, vibronic and electronic properties ofinterfaces are described, as well as fundamental aspects of adsorption and layer growth. Because of its importance for modern microelectronics special emphasis is placed on the electronic properties of semiconductorinterfaces and heterostructures. Experimental topics covering the basics of ultrahigh-vacuum technology, electron optics, surface spectroscopies and electrical interface characterization techniques are presented in the form of separate panels.
An advanced level textbook covering geometric, chemical, and electronic structure of electronic materials, and their applications to devices based on semiconductor surfaces, metal-semiconductor interfaces, and semiconductor heterojunctions. Starting with the fundamentals of electrical measurements on semiconductor interfaces, it then describes the importance of controlling macroscopic electrical properties by atomic-scale techniques. Subsequent chapters present the wide range of surface and interface techniques available to characterize electronic, optical, chemical, and structural properties of electronic materials, including semiconductors, insulators, nanostructures, and organics. The essential physics and chemistry underlying each technique is described in sufficient depth with references to the most authoritative sources for more exhaustive discussions, while numerous examples are provided throughout to illustrate the applications of each technique. With its general reading lists, extensive citations to the text, and problem sets appended to all chapters, this is ideal for students of electrical engineering, physics and materials science. It equally serves as a reference for physicists, material science and electrical and electronic engineers involved in surface and interface science, semiconductor processing, and device modeling and design. This is a coproduction of Wiley and IEEE * Free solutions manual available for lecturers at www.wiley-vch.de/supplements/
Silicon, the basic material for a multibillion-dollar industry, is the most widely researched and applied semiconductor, and its surfaces are the most thoroughly studied of all semiconductor surfaces. Silicon Surfaces and Formation of Interfaces may be used as an introduction to graduate-level physics and chemical physics. Moreover, it gives a specialized and comprehensive description of the most common faces of silicon crystals as well as their interaction with adsorbates and overlayers. This knowledge is presented in a systematic and easy-to-follow way. Discussion of each system is preceded by a brief overview which categorizes the features and physical mechanisms before the details are presented. The literature is easily available, and the references am numerous and organized in tables, allowing a search without the need to browse through the text. Though this volume focuses on a scientific understanding of physics on the atomistic and mesoscopic levels, it also highlights existing and potential links between basic research in surface science and applications in the silicon industry. It will be valuable to anyone writing a paper, thesis, or proposal in the field of silicon surfaces.
Molecular surface science has made enormous progress in the past 30 years. The development can be characterized by a revolution in fundamental knowledge obtained from simple model systems and by an explosion in the number of experimental techniques. The last 10 years has seen an equally rapid development of quantum mechanical modeling of surface processes using Density Functional Theory (DFT). Chemical Bonding at Surfaces and Interfaces focuses on phenomena and concepts rather than on experimental or theoretical techniques. The aim is to provide the common basis for describing the interaction of atoms and molecules with surfaces and this to be used very broadly in science and technology. The book begins with an overview of structural information on surface adsorbates and discusses the structure of a number of important chemisorption systems. Chapter 2 describes in detail the chemical bond between atoms or molecules and a metal surface in the observed surface structures. A detailed description of experimental information on the dynamics of bond-formation and bond-breaking at surfaces make up Chapter 3. Followed by an in-depth analysis of aspects of heterogeneous catalysis based on the d-band model. In Chapter 5 adsorption and chemistry on the enormously important Si and Ge semiconductor surfaces are covered. In the remaining two Chapters the book moves on from solid-gas interfaces and looks at solid-liquid interface processes. In the final chapter an overview is given of the environmentally important chemical processes occurring on mineral and oxide surfaces in contact with water and electrolytes. - Gives examples of how modern theoretical DFT techniques can be used to design heterogeneous catalysts - This book suits the rapid introduction of methods and concepts from surface science into a broad range of scientific disciplines where the interaction between a solid and the surrounding gas or liquid phase is an essential component - Shows how insight into chemical bonding at surfaces can be applied to a range of scientific problems in heterogeneous catalysis, electrochemistry, environmental science and semiconductor processing - Provides both the fundamental perspective and an overview of chemical bonding in terms of structure, electronic structure and dynamics of bond rearrangements at surfaces
Using the continuum of interface-induced gap states (IFIGS) as a unifying theme, Mönch explains the band-structure lineup at all types of semiconductor interfaces. These intrinsic IFIGS are the wave-function tails of electron states, which overlap a semiconductor band-gap exactly at the interface, so they originate from the quantum-mechanical tunnel effect. He shows that a more chemical view relates the IFIGS to the partial ionic character of the covalent interface-bonds and that the charge transfer across the interface may be modeled by generalizing Pauling?s electronegativity concept. The IFIGS-and-electronegativity theory is used to quantitatively explain the barrier heights and band offsets of well-characterized Schottky contacts and semiconductor heterostructures, respectively.
This book emphasises both experimental and theoretical aspects of surface, interface and thin film physics. Compa- red to the earlier editions, which bore the title "Surfaces and Interfaces of Solid Materials", the book now places more emphasis on thin films, including also their superconducting and ferromagnetic properties. The present 4th edition thus presents techniques of preparing well-defined solid surfaces and interfaces, fundamental aspects of adsorption and layer growth, as well as basic models for the descripti- on of structural, vibronic and electronic properties of sur- faces, interfaces and thin films. Because of their importan- ce for modern information technology, significant attention is paid to the electronic properties of semiconductor inter- faces and heterostructures. Collective phenomena , such as superconductivity and ferromagnetism, also feature promi- nently. Experimental sections covering essential measurement and preparation techniques are presented in separate panels.
This graduate-level textbook covers the major developments in surface sciences of recent decades, from experimental tricks and basic techniques to the latest experimental methods and theoretical understanding. It is unique in its attempt to treat the physics of surfaces, thin films and interfaces, surface chemistry, thermodynamics, statistical physics and the physics of the solid/electrolyte interface in an integral manner, rather than in separate compartments. It is designed as a handbook for the researcher as well as a study-text for graduate students. Written explanations are supported by 350 graphs and illustrations.