This eagerly-awaited volume has been edited by two academic researchers with extensive and reputable experience in this field. Emphasis is given to the underlying science of the method of Auger microscopy, and its instrumental realization, the visualization and interpretation of the data in the sets of the images that form the output of the measurements and the methods used to quantify the images. Imaging artefacts in Auger microscopy and methods to correct them are also detailed. The authors describe the technique of Multi-Spectral Auger Microscopy (MULSAM) and demonstrate its advantages in mapping complex multi-component surfaces. The book concludes with an outlook for the future of Auger microscopy.
Scanning Electron Microscopy provides a description of the physics of electron-probe formation and of electron-specimen interactions. The different imaging and analytical modes using secondary and backscattered electrons, electron-beam-induced currents, X-ray and Auger electrons, electron channelling effects, and cathodoluminescence are discussed to evaluate specific contrasts and to obtain quantitative information.
To anyone who is interested in surface chemical analysis of materials on the nanometer scale, this book is prepared to give appropriate information. Based on typical application examples in materials science, a concise approach to all aspects of quantitative analysis of surfaces and thin films with AES and XPS is provided. Starting from basic principles which are step by step developed into practically useful equations, extensive guidance is given to graduate students as well as to experienced researchers. Key chapters are those on quantitative surface analysis and on quantitative depth profiling, including recent developments in topics such as surface excitation parameter and backscattering correction factor. Basic relations are derived for emission and excitation angle dependencies in the analysis of bulk material and of fractional nano-layer structures, and for both smooth and rough surfaces. It is shown how to optimize the analytical strategy, signal-to-noise ratio, certainty and detection limit. Worked examples for quantification of alloys and of layer structures in practical cases (e.g. contamination, evaporation, segregation and oxidation) are used to critically review different approaches to quantification with respect to average matrix correction factors and matrix relative sensitivity factors. State-of-the-art issues in quantitative, destructive and non-destructive depth profiling are discussed with emphasis on sputter depth profiling and on angle resolved XPS and AES. Taking into account preferential sputtering and electron backscattering corrections, an introduction to the mixing-roughness-information depth (MRI) model and its extensions is presented.
Surface analysis--the examination of the outer few nanometers of a material--is a routine undertaking in laboratories throughout the world, and is of great importance in such areas as corrosion, adhesion, polymer surface treatment, and microelectronics fabrication. This handbook provides an introduction to the two most popular surface analysis techniques: X-ray photoelectron spectroscopy and Auger electron spectroscopy. It explains the underlying physical principles, discusses instrumentation, and looks at the interpretation of resulting spectra. Applications of the two techniques are considered, and a critical comparison with other available methods is also included. This fully illustrated guide will be a valuable introduction for students and researchers in physics, engineering, and materials science.
Vols. for 1968-77 include the proceedings of the annual Scanning Electron Microscope Symposium, sponsored by the IIT Research Institute, and other workshops.
While most textbooks about scanning electron microscopy (SEM) cover the high-voltage range from 5-50 keV, this volume considers the special problems in low-voltage SEM and summarizes the differences between LVSEM and conventional SEM. Chapters cover the influence of lens aberrations and design on electron-probe formation; the effect of elastic and inelastic scattering processes on electron diffusion and electron range; charging and radiation damage effects; the dependence of SE yield and the backscattering coefficient on electron energy, surface tilt, and material as well as the angular and energy distributions; and types of image contrast and the differences between LVSEM and conventional SEM modes due to the influence of electron-specimen interactions.
