Rare-Earth Doped Semiconductors II: Volume 422
Rare-Earth Doped Semiconductors II: Volume 422

Author: S. Coffa

Publisher:

Published: 1996

Total Pages: 392

ISBN-13:

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Rare-earth doped semiconductors hold great potential for a variety of optoelectronic applications, including lasers, LEDs and optical amplifiers. In fact, the field has grown rapidly over the past several years, with a clear switch in direction. The first book by this name was devoted to rare-earth doped II-VI and III-V semiconductors; more than half of the papers in this new volume are devoted to rare-earth doped silicon. This indicates that rare-earth doping of silicon is now seriously considered as a means to achieve silicon-based optoelectronic devices. In addition, new reports on rare-earth doped III-nitrides are also presented. Researchers from 14 countries come together in the volume to discuss current trends, highlight new developments and identify potential electronic and optoelectronic applications. Topics include: incorporation methods and properties; structural, electrical and optical properties; excitation mechanisms and electroluminescence and integration.

InP and Related Compounds
InP and Related Compounds

Author: M O Manasreh

Publisher: CRC Press

Published: 2000-08-08

Total Pages: 870

ISBN-13: 9789056992644

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InP is a key semiconductor for the production of optoelectronic and photonic devices. Its related compounds, such as InGaAsP alloy, have been realized as very important materials for communication in the 1.3 and 1.55 micron spectral regions. Furthermore, the applications on InP and related compounds have extended to other areas that include laser diodes, light emitting diodes, photodetectors, waveguides, photocathodes, solar cells, and many other applications. The topics presented in this book have been chosen to achieve a balance between the properties of bulk materials, doping, characterization, applications, and devices. This unique volume, featuring chapters written by experts in the field, provides a good starting point for those who are new to the subject and contains detailed results and in depth discussions for those who are experts in the field.

Processing of 'Wide Band Gap Semiconductors
Processing of 'Wide Band Gap Semiconductors

Author: S. J. Pearton

Publisher: Cambridge University Press

Published: 2013-01-15

Total Pages: 593

ISBN-13: 0080946755

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Wide bandgap semiconductors, made from such materials as GaN, SiC, diamond, and ZnSe, are undergoing a strong resurgence in recent years, principally because of their direct bandgaps, which give them a huge advantage over the indirect gap Sic As an example, more than 10 million blue LEDs using this technology are sold each month, and new, high brightness (15 lumens per watt), long-life white LEDs are under development with the potential to replace incandescent bulbs in many situations. This book provides readers with a broad overview of this rapidly expanding technology, bringing them up to speed on new discoveries and commercial applications. It provides specific technical applications of key processes such as laser diodes, LEDs, and very high temperature electronic controls on engines, focusing on doping, etching, oxidation passivation, growth techniques and more.

CVD of Nonmetals
CVD of Nonmetals

Author: William S. Rees, Jr.

Publisher: John Wiley & Sons

Published: 2008-09-26

Total Pages: 441

ISBN-13: 352761480X

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Written by leading experts in the field, this practical reference handbook offers an up-to-date, critical survey of the chemical vapor deposition (CVD) of nonmetals, a key technology in semiconductor electronics, finishing, and corrosion protection. The basics necessary for any CVD process are discussed in the introduction. In the following chapters, precursor requirements, with an emphasis on materials chemistry, common structures of reactants and substrates, as well as reaction control are discussed for a broad range of compositions including superconducting, conducting, semiconducting, insulating and structural materials. Technological issues, such as reactor geometries and operation parameters, are assessed and the viability of the method, both technically and economically, is compared with other techniques for the preparation of thin films. Relevant materials and technical data are collected in tables throughout. An extensive glossary, list of abbreviations and acronyms, and over 1400 references round off this impressive work. The 'CVD of Nonmetals' offers a stimulating combination of basic concepts and practical applications. Materials scientists, solid-state and organometallic chemists, physicists, engineer, as well as graduate students will find this book of enomous value.

Rare-Earths and Actinides in High Energy Spectroscopy
Rare-Earths and Actinides in High Energy Spectroscopy

Author: Christiane Bonnelle

Publisher: Springer

Published: 2015-12-22

Total Pages: 393

ISBN-13: 904812879X

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This unique monograph covers recent theoretical and experimental results on the complex character of f electrons in materials containing lanthanides (rare earths) or actinides, such as alpha-cerium and delta-plutonium. It answers the urgent need for a general presentation of the body of experimental and theoretical results presently available in this challenging domain. Some of the fast developing applications of lanthanide and actinide materials are mentioned. Materials containing atoms with an open f shell have electronic and crystalline properties that are controlled by the localized or delocalized character of the f electrons. This book gives a theoretical discussion of the various spectroscopic methods that shed light on the character of the f electrons and on the connection between their localization and the properties of these materials. Part 1 covers the characteristics of the f electrons in atoms and solids and includes a discussion of the properties of lanthanides and actinides in connection with the f electrons. Part 2 describes the various spectroscopic methods that are used to establish the electronic distributions and energies of the states. Examples involve the determination of f electron distributions by high energy spectroscopy methods with separate treatment of the valence and core electrons. Part 3 concentrates on the theoretical treatment of electronic transitions involving f electrons and simulations of the lanthanide spectra, including comparison with the available experimental data. Part 4 discusses the localized or delocalized character of the f electrons in actinides and their compounds, including comparison (analogies & differences) between the 4f and 5f electron materials. This monograph should be of great value for researchers, academics and engineers working in the fields of high energy spectroscopy, electronic and nuclear science and technology, as well as materials involving rare earths and radio-elements.