Processes at the Semiconductor-Solution Interface 4

Processes at the Semiconductor-Solution Interface 4

Author: C. O'Dwyer

Publisher: The Electrochemical Society

Published: 2011-04

Total Pages: 236

ISBN-13: 1566778697

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The symposium consisted of four half-day sessions on topics at the forefront of semiconductor electrochemistry and solution-based processing including etching, patterning, passivation, porosity formation, electrochemical film growth, energy conversion materials, deposition, semiconductor surface functionalization, photoelectrochemical and optical properties, and other related processes. This issue of ECS Transactions contains 18 of the papers presented including invited papers by H. Föll (Christian-Albrechts University Kiel), J. N. Chazalviel (Ecole Polytechnique, CNRS), D. N. Buckley (University of Limerick, and Past President, ECS), J. D. Holmes (University College Cork), E. Chassaing (IRDEP, EDF-CNRS-ENSCP).


Processes at the Semiconductor Solution Interface 8

Processes at the Semiconductor Solution Interface 8

Author: C. O’Dwyer

Publisher: The Electrochemical Society

Published: 2019-05-17

Total Pages: 55

ISBN-13: 1607688697

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This issue of ECS Transactions includes papers based on presentations from the symposium "Processes at the Semiconductor Solution Interface 8," originally held at the 235th ECS Meeting in Dallas, Texas, May 26-30, 2019.


Electrochemical and Optical Techniques for the Study and Monitoring of Metallic Corrosion

Electrochemical and Optical Techniques for the Study and Monitoring of Metallic Corrosion

Author: M.G.S Ferreira

Publisher: Springer Science & Business Media

Published: 1991-08-31

Total Pages: 732

ISBN-13: 9780792313687

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In spite of considerable efforts over the years to understand and combat materials degradation via corrosion processes, many challenges still remain both in the theoretical understanding of the phenomena and in seeking pratical solutions to the perennial problem. Progress has been slow due to the complexity of the processes and the systems involved. Fortunately, in recent years there has been a renaissance in the development of new electrochemical and optical techniques, as well as advances in instrumentation, which have greatly aided our quest to gain insight into the complex mechanisms involved in metallic corrosion and passivation. Numerous scientific meetings, symposia, and workshops have been held allover the world which attest to the frenzy of activities in corrosion science and technology. However, most of these conferences have dealt mainly with recent research results. There appeared to be a need to assess and disseminate our present state of knowledge in the field as regards measurement techniques, theory, and instrumentation. The present NATO Advanced Study Institute was therefore held in Viana do Castelo, Portugal from July 9 to 21, 1989. The Institute consisted of a series of tutorial lectures, poster sessions, and round-table discussions interspersed evenly over the two-week period. It was attended by 75 participants from several countries representing industry, government and university laboratories.


Processing and Properties of Compound Semiconductors

Processing and Properties of Compound Semiconductors

Author:

Publisher: Elsevier

Published: 2001-10-20

Total Pages: 333

ISBN-13: 0080541011

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Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.