This volume covers five emerging areas of advanced device technology: wide band gap devices, terahertz and millimeter waves, nanometer silicon and silicon-germanium devices, nanoelectronics and ballistic devices, and the characterization of advanced photonic and electronic devices. The papers by leading researchers in high speed and advanced electronic and photonic technology presented many “firsts” and breakthrough results, as has become a tradition with the Lester Eastman Conference, and will allow readers to obtain up-to-date information about emerging trends and future directions of these technologies. Key papers in each section present snap-shot and mini reviews of state-of-the-art and “hot off the press” results making the book required reading for engineers, scientists, and students working on advanced and high speed device technology.
Advanced High Speed Devices covers five areas of advanced device technology: terahertz and high speed electronics, ultraviolet emitters and detectors, advanced III-V field effect transistors, III-N materials and devices, and SiC devices. These emerging areas have attracted a lot of attention and the up-to-date results presented in the book will be of interest to most device and electronics engineers and scientists. The contributors range from prominent academics, such as Professor Lester Eastman, to key US Government scientists, such as Dr Michael Wraback.
This third volume in the Advanced Nanocarbon Materials series covers the topic of flexible electronics both from a materials and an applications perspective. Comprehensive in its scope, the monograph examines organic, inorganic and composite materials with a section devoted to carbon-based materials with a special focus on the generation and properties of 2D materials. It also presents carbon modifications and derivatives, such as carbon nanotubes, graphene oxide and diamonds. In terms of the topical applications covered these include, but are not limited to, flexible displays, organic electronics, transistors, integrated circuits, semiconductors and solar cells. These offer perspectives for today?s energy and healthcare challenges, such as electrochemical energy storage and wearable devices. Finally, a section on fundamental properties and characterization approaches of flexible electronics rounds off the book. Each contribution points out the importance of the structure-function relationship for the target-oriented fabrication of electronic devices, enabling the design of complex components.
In a world where advanced knowledge is widespread and low-cost labor is readily available, U.S. advantages in the marketplace and in science and technology have begun to erode. A comprehensive and coordinated federal effort is urgently needed to bolster U.S. competitiveness and pre-eminence in these areas. This congressionally requested report by a pre-eminent committee makes four recommendations along with 20 implementation actions that federal policy-makers should take to create high-quality jobs and focus new science and technology efforts on meeting the nation's needs, especially in the area of clean, affordable energy: 1) Increase America's talent pool by vastly improving K-12 mathematics and science education; 2) Sustain and strengthen the nation's commitment to long-term basic research; 3) Develop, recruit, and retain top students, scientists, and engineers from both the U.S. and abroad; and 4) Ensure that the United States is the premier place in the world for innovation. Some actions will involve changing existing laws, while others will require financial support that would come from reallocating existing budgets or increasing them. Rising Above the Gathering Storm will be of great interest to federal and state government agencies, educators and schools, public decision makers, research sponsors, regulatory analysts, and scholars.
Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Hybrid Systems-in-Foil (HySiF) is a concept that extends the potential of conventional More-than-More Systems-in/on-Package (SiPs and SoPs) to the flexible electronics world. In HySiF, an economical implementation of flexible electronic systems is possible by integrating a minimum number of embedded silicon chips and a maximum number of on-foil components. Here, the complementary characteristics of CMOS SoCs and larger area organic and printed electronics are combined in a HySiF-compatible polymeric substrate. Within the HySiF scope, the fabrication process steps and the integration design rules with all the accompanying boundary conditions concerning material compatibility, surface properties, and thermal budget, are defined. This Element serves as an introduction to the HySiF concept. A summary of recent ultra-thin chip fabrication and flexible packaging techniques is provided. Several bendable electronic components are presented demonstrating the benefits of HySiF. Finally, prototypes of flexible wireless sensor systems that adopt the HySiF concept are demonstrated.
Completely revised and updated, this text provides an easy-to-read guide to the concept of mass spectrometry and demonstrates its potential and limitations. Written by internationally recognised experts and utilising "real life" examples of analyses and applications, the book presents real cases of qualitative and quantitative applications of mass spectrometry. Unlike other mass spectrometry texts, this comprehensive reference provides systematic descriptions of the various types of mass analysers and ionisation, along with corresponding strategies for interpretation of data. The book concludes with a comprehensive 3000 references. This multi-disciplined text covers the fundamentals as well as recent advance in this topic, providing need-to-know information for researchers in many disciplines including pharmaceutical, environmental and biomedical analysis who are utilizing mass spectrometry
To surmount the continuous scaling challenges of MOSFET devices, FinFETs have emerged as the real alternative for use as the next generation device for IC fabrication technology. The objective of this book is to provide the basic theory and operating principles of FinFET devices and technology, an overview of FinFET device architecture and manufacturing processes, and detailed formulation of FinFET electrostatic and dynamic device characteristics for IC design and manufacturing. Thus, this book caters to practicing engineers transitioning to FinFET technology and prepares the next generation of device engineers and academic experts on mainstream device technology at the nanometer-nodes.
Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices
