Plasma Etching Processes for Interconnect Realization in VLSI
Plasma Etching Processes for Interconnect Realization in VLSI

Author: Nicolas Posseme

Publisher: Elsevier

Published: 2015-04-14

Total Pages: 123

ISBN-13: 0081005903

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This is the first of two books presenting the challenges and future prospects of plasma etching processes for microelectronics, reviewing the past, present and future issues of etching processes in order to improve the understanding of these issues through innovative solutions.This book focuses on back end of line (BEOL) for high performance device realization and presents an overview of all etch challenges for interconnect realization as well as the current etch solutions proposed in the semiconductor industry. The choice of copper/low-k interconnect architecture is one of the keys for integrated circuit performance, process manufacturability and scalability. Today, implementation of porous low-k material is mandatory in order to minimize signal propagation delay in interconnections. In this context, the traditional plasma process issues (plasma-induced damage, dimension and profile control, selectivity) and new emerging challenges (residue formation, dielectric wiggling) are critical points of research in order to control the reliability and reduce defects in interconnects. These issues and potential solutions are illustrated by the authors through different process architectures available in the semiconductor industry (metallic or organic hard mask strategies). Presents the difficulties encountered for interconnect realization in very large-scale integrated (VLSI) circuits Focused on plasma-dielectric surface interaction Helps you further reduce the dielectric constant for the future technological nodes

Plasma Etching Processes for CMOS Devices Realization
Plasma Etching Processes for CMOS Devices Realization

Author: Nicolas Posseme

Publisher: Elsevier

Published: 2017-01-25

Total Pages: 138

ISBN-13: 0081011962

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Plasma etching has long enabled the perpetuation of Moore's Law. Today, etch compensation helps to create devices that are smaller than 20 nm. But, with the constant downscaling in device dimensions and the emergence of complex 3D structures (like FinFet, Nanowire and stacked nanowire at longer term) and sub 20 nm devices, plasma etching requirements have become more and more stringent. Now more than ever, plasma etch technology is used to push the limits of semiconductor device fabrication into the nanoelectronics age. This will require improvement in plasma technology (plasma sources, chamber design, etc.), new chemistries (etch gases, flows, interactions with substrates, etc.) as well as a compatibility with new patterning techniques such as multiple patterning, EUV lithography, Direct Self Assembly, ebeam lithography or nanoimprint lithography. This book presents these etch challenges and associated solutions encountered throughout the years for transistor realization. Helps readers discover the master technology used to pattern complex structures involving various materials Explores the capabilities of cold plasmas to generate well controlled etched profiles and high etch selectivities between materials Teaches users how etch compensation helps to create devices that are smaller than 20 nm

Atomic-Molecular Ionization by Electron Scattering
Atomic-Molecular Ionization by Electron Scattering

Author: K. N. Joshipura

Publisher: Cambridge University Press

Published: 2018-06-30

Total Pages:

ISBN-13: 1108574750

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Comprehensive and up-to-date text in the field of electron scattering and ionization, covering fundamentals, experimental background, quantum scattering theories and applications. Electron impact ionization of atoms and molecules in ground/metastable states is discussed comprehensively. The text covers electron scattering phenomenon for diatomic and common molecules, polyatomic molecules and radicals including hydro-carbons, fluoro-carbons and other larger molecules together with relevant radical species in detail. Applications of electron impact ionization and excitation in gaseous or plasma and condensed matter is discussed in a separate chapter. Recent advances in the field of electron molecule scattering and ionization for polyatomic molecules is covered extensively.

Advances in Atomic, Molecular, and Optical Physics
Advances in Atomic, Molecular, and Optical Physics

Author:

Publisher: Academic Press

Published: 2017-06-07

Total Pages: 642

ISBN-13: 012812184X

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Advances in Atomic, Molecular, and Optical Physics, Volume 66 provides a comprehensive compilation of recent developments in a field that is in a state of rapid growth. New to this volume are chapters devoted to 2D Coherent Spectroscopy of Electronic Transitions, Nonlinear and Quantum Optical Properties and Applications of Intense Twin-Beams, Non-classical Light Generation from III-V and Group-IV Solid-State Cavity Quantum Systems, Trapping Atoms with Radio Frequency Adiabatic Potentials, Quantum Control of Optomechanical Systems, and Efficient Description of Bose–Einstein Condensates in Time-Dependent Rotating Traps. With timely articles written by distinguished experts that contain relevant review materials and detailed descriptions of important developments in the field, this series is a must have for those interested in the variety of topics covered. Presents the work of international experts in the field Contains comprehensive articles that compile recent developments in a field that is experiencing rapid growth, with new experimental and theoretical techniques emerging Ideal for users interested in optics, excitons, plasmas, and thermodynamics Topics covered include atmospheric science, astrophysics, surface physics, and laser physics, amongst others

Low-Energy Electrons
Low-Energy Electrons

Author: Oddur Ingólfsson

Publisher: CRC Press

Published: 2019-04-23

Total Pages: 274

ISBN-13: 0429602766

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Low-energy electrons are ubiquitous in nature and play an important role in natural phenomena as well as many potential and current industrial processes. Authored by 16 active researchers, this book describes the fundamental characteristics of low-energy electron–molecule interactions and their role in different fields of science and technology, including plasma processing, nanotechnology, and health care, as well as astro- and atmospheric physics and chemistry. The book is packed with illustrative examples, from both fundamental and application sides, features about 130 figures, and lists over 800 references. It may serve as an advanced graduate-level study course material where selected chapters can be used either individually or in combination as a basis to highlight and study specific aspects of low-energy electron–molecule interactions. It is also directed at researchers in the fields of plasma physics, nanotechnology, and radiation damage to biologically relevant material (such as in cancer therapy), especially those with an interest in high-energy-radiation-induced processes, from both an experimental and a theoretical point of view.

Plasma Processing for VLSI
Plasma Processing for VLSI

Author: Norman G. Einspruch

Publisher: Academic Press

Published: 2014-12-01

Total Pages: 544

ISBN-13: 1483217752

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VLSI Electronics: Microstructure Science, Volume 8: Plasma Processing for VLSI (Very Large Scale Integration) discusses the utilization of plasmas for general semiconductor processing. It also includes expositions on advanced deposition of materials for metallization, lithographic methods that use plasmas as exposure sources and for multiple resist patterning, and device structures made possible by anisotropic etching. This volume is divided into four sections. It begins with the history of plasma processing, a discussion of some of the early developments and trends for VLSI. The second section, Deposition, discusses deposition techniques for VLSI such as sputtering metals for metallization and contacts, plasma-enhanced chemical vapor deposition of metals and suicides, and plasma enhanced chemical vapor deposition of dielectrics. The part on Lithography presents the high-resolution trilayer resist system, pulsed x-ray sources for submicrometer x-ray lithography, and high-intensity deep-UV sources. The last part, Etching, provides methods in etching, like ion-beam etching using reactive gases, low-pressure reactive ion etching, and the uses of inert-gas ion milling. The theory and mechanisms of plasma etching are described and a number of new device structures made possible by anisotropic etching are enumerated as well. Scientists, engineers, researchers, device designers, and systems architects will find the book useful.

Dry Etching for VLSI
Dry Etching for VLSI

Author: A.J. van Roosmalen

Publisher: Springer Science & Business Media

Published: 2013-06-29

Total Pages: 247

ISBN-13: 148992566X

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This book has been written as part of a series of scientific books being published by Plenum Press. The scope of the series is to review a chosen topic in each volume. To supplement this information, the abstracts to the most important references cited in the text are reprinted, thus allowing the reader to find in-depth material without having to refer to many additional publications. This volume is dedicated to the field of dry (plasma) etching, as applied in silicon semiconductor processing. Although a number of books have appeared dealing with this area of physics and chemistry, these all deal with parts of the field. This book is unique in that it gives a compact, yet complete, in-depth overview of fundamentals, systems, processes, tools, and applications of etching with gas plasmas for VLSI. Examples are given throughout the fundamental sections, in order to give the reader a better insight in the meaning and magnitude of the many parameters relevant to dry etching. Electrical engineering concepts are emphasized to explain the pros and cons of reactor concepts and excitation frequency ranges. In the description of practical applications, extensive use is made of cross-referencing between processes and materials, as well as theory and practice. It is thus intended to provide a total model for understanding dry etching. The book has been written such that no previous knowledge of the subject is required. It is intended as a review of all aspects of dry etching for silicon semiconductor processing.

Plasma Etching in Semiconductor Fabrication
Plasma Etching in Semiconductor Fabrication

Author: Russ A. Morgan

Publisher: North-Holland

Published: 1985-01-01

Total Pages: 316

ISBN-13: 9780444424198

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Hardbound. This book is based on a post-graduate study carried out by the author on plasma etching mechanisms of semiconductor materials such as silicon, silicon dioxide, photoresist and aluminium films used in integrated circuit fabrication. In this book he gives an extensive review of the chemistry of dry etching, sustaining mechanisms and reactor architecture. He also describes a study made on the measurement of the electrical characteristics and ionization conditions existing in a planar reactor. In addition, practical problems such as photoresist mask erosion have been investigated and the reader will find the photoresist chemistry very useful. The book contains a great deal of practical information on plasma etching processes. The electronics industry is continually seeking ways to improve the miniaturization of devices, and this account of the author's findings should be a useful contribution to the work of miniaturization.