The Physics of Submicron Structures

The Physics of Submicron Structures

Author: Harold L. Grubin

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 349

ISBN-13: 1461327776

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Research on electronic transport in ultra small dimensions has been highly stimulated by the sensational developments in silicon technology and very large scale integration. The papers in this volume, however, have been influenced to no lesser extent by the advent of molecular beam epitaxy and metal/organic chemical vapor deposition which has made possible the control of semiconductor boundaries on a quantum level. This new control of boundary condi tions in ultra small electronic research is the mathematical reason for a whole set of innovative ideas. For the first time in the history of semiconductors, it is possible to design device functions from physical considerations involving ~ngstom scale dimensions. At the time the meeting was held, July 1982, it was one of the first strong signals of the powerful developments in this area. During the meeting, important questions have been answered concerning ballistic transport, Monte Carlo simulations of high field transport and other developments pertinent to new device concepts and the understanding of small devices from physics to function. The committee members want to express their deep appreciation to the speakers who have made the meeting a success. The USER pro ject of DOD has been a vital stimulous and thanks go to the Army Research Office and the Office of Naval Research for financial sup port. Urbana, January 1984 K. Hess, Conference Chairman J. R. Brews L. R. Cooper, Ex Officio D. K. Ferry H. L. Grubin G. J. Iafrate M. I. Nathan A. F.


Physics of Submicron Devices

Physics of Submicron Devices

Author: David K. Ferry

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 409

ISBN-13: 1461532841

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The purposes of this book are many. First, we must point out that it is not a device book, as a proper treatment of the range of important devices would require a much larger volume even without treating the important physics for submicron devices. Rather, the book is written principally to pull together and present in a single place, and in a (hopefully) uniform treatment, much of the understanding on relevant physics for submicron devices. Indeed, the understand ing that we are trying to convey through this work has existed in the literature for quite some time, but has not been brought to the full attention of those whose business is the making of submicron devices. It should be remarked that much of the important physics that is discussed here may not be found readily in devices at the 1.0-JLm level, but will be found to be dominant at the O.I-JLm level. The range between these two is rapidly being covered as technology moves from the 256K RAM to the 16M RAM chips.


Physics of Low-Dimensional Semiconductor Structures

Physics of Low-Dimensional Semiconductor Structures

Author: Paul N. Butcher

Publisher: Springer Science & Business Media

Published: 2013-11-11

Total Pages: 597

ISBN-13: 1489924159

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Presenting the latest advances in artificial structures, this volume discusses in-depth the structure and electron transport mechanisms of quantum wells, superlattices, quantum wires, and quantum dots. It will serve as an invaluable reference and review for researchers and graduate students in solid-state physics, materials science, and electrical and electronic engineering.


Quantum Transport in Semiconductor Submicron Structures

Quantum Transport in Semiconductor Submicron Structures

Author: B. Kramer

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 382

ISBN-13: 9400917600

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The articles in this book have been selected from the lectures of a NATO Advanced Study Institute held at Bad Lauterberg (Germany) in August 1995. Internationally well-known researchers in the field of mesoscopic quantum physics provide insight into the fundamental physics underlying the mesoscopic transport phenomena in structured semiconductor inversion layers. In addition, some of the most recent achievements are reported in contributed papers. The aim of the volume is not to give an overview over the field. Instead, emphasis is on interaction and correlation phenomena that turn out to be of increasing importance for the understanding of the phenomena in the quantum Hall regime, and in the transport through quantum dots. The present status of the quantum Hall experiments and theory is reviewed. As a "key example" for non-Fermi liquid behavior the Luttinger liquid is introduced, including some of the most recent developments. It is not only of importance for the fractional quantum Hall effect, but also for the understanding of transport in quantum wires. Furthermore, the chaotic and the correlation aspects of the transport in quantum dot systems are described. The status of the experimental work in the area of persistent currents in semiconductor systems is outlined. The construction of one of the first single-electron transistors is reported. The theoretical approach to mesoscopic transport, presently a most active area, is treated, and some aspects of time-dependent transport phenomena are also discussed.


Quantum Dynamics of Submicron Structures

Quantum Dynamics of Submicron Structures

Author: Hilda A. Cerdeira

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 726

ISBN-13: 9401100195

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Techniques for the preparation of condensed matter systems have advanced considerably in the last decade, principally due to the developments in microfabrication technologies. The widespread availability of millikelvin temperature facilities also led to the discovery of a large number of new quantum phenomena. Simultaneously, the quantum theory of small condensed matter systems has matured, allowing quantitative predictions. The effects discussed in Quantum Dynamics of Submicron Structures include typical quantum interference phenomena, such as the Aharonov-Bohm-like oscillations of the magnetoresistance of thin metallic cylinders and rings, transport through chaotic billiards, and such quantization effects as the integer and fractional quantum Hall effect and the quantization of the conductance of point contacts in integer multiples of the `conductance quantum'. Transport properties and tunnelling processes in various types of normal metal and superconductor tunnelling systems are treated. The statistical properties of the quantum states of electrons in spatially inhomogeneous systems, such as a random, inhomogeneous magnetic field, are investigated. Interacting systems, like the Luttinger liquid or electrons in a quantum dot, are also considered. Reviews are given of quantum blockade mechanisms for electrons that tunnel through small junctions, like the Coulomb blockade and spin blockade, the influence of dissipative coupling of charge carriers to an environment, and Andreev scattering. Coulomb interactions and quantization effects in transport through quantum dots and in double-well potentials, as well as quantum effects in the motion of vortices, as in the Aharonov-Casher effect, are discussed. The status of the theory of the metal-insulator and superconductor-insulator phase transitions in ordered and disordered granular systems are reviewed as examples in which such quantum effects are of great importance.


Low-dimensional Semiconductors

Low-dimensional Semiconductors

Author: M. J. Kelly

Publisher: Clarendon Press

Published: 1995-11-23

Total Pages: 569

ISBN-13: 0191590096

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This text is a first attempt to pull together the whole of semiconductor science and technology since 1970 in so far as semiconductor multilayers are concerned. Material, technology, physics and device issues are described with approximately equal emphasis, and form a single coherant point of view. The subject matter is the concern of over half of today's active semiconductor scientists and technologists, the remainder working on bulk semiconductors and devices. It is now routine to design and the prepare semiconductor multilayers at a time, with independent control over the dropping and composition in each layer. In turn these multilayers can be patterned with features that as a small as a few atomic layers in lateral extent. The resulting structures open up many new ares of exciting solid state and quantum physics. They have also led to whole new generations of electronic and optoelectronic devices whose superior performance relates back to the multilayer structures. The principles established in the field have several decades to go, advancing towards the ultimate of materials engineering, the design and preparation of solids atom by atom. The book should appeal equally to physicists, electronic engineers and materials scientists.


Quantum Semiconductor Structures

Quantum Semiconductor Structures

Author: Claude Weisbuch

Publisher: Elsevier

Published: 2014-06-28

Total Pages: 265

ISBN-13: 0080515576

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In its original form, this widely acclaimed primer on the fundamentals of quantized semiconductor structures was published as an introductory chapter in Raymond Dingle's edited volume (24) of Semiconductors and Semimetals. Having already been praised by reviewers for its excellent coverage, this material is now available in an updated and expanded "student edition." This work promises to become a standard reference in the field. It covers the basics of electronic states as well as the fundamentals of optical interactions and quantum transport in two-dimensional quantized systems. This revised student edition also includes entirely new sections discussing applications and one-dimensional and zero-dimensional systems. - Available for the first time in a new, expanded version - Provides a concise introduction to the fundamentals and fascinating applications of quantized semiconductor structures


Frontiers of Computing Systems Research

Frontiers of Computing Systems Research

Author: Stuart K. Tewksbury

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 394

ISBN-13: 1461306337

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Computing systems researchers confront two serious problems. (1) The increasingly monolithic, or pseudo-monolithic, integration of complex com puting functions and systems imposes an environment which integrates ad vanced principles and techniques from a broad variety of fields. Researchers not only must confront the increased complexity of topics in their specialty field but also must develop a deeper general understanding of a broadening number of fields. (2) There has been a proliferation of journals, books, workshops and conferences through which research results are reported. Remaining familiar with recent advances in our specific fields is a major challenge. Casually browsing through journals and conference proceedings to remain aware of developments in areas outside our specialization has become an even greater challenge. Frontiers of Computing Systems Research has been established to ad dress these two issues. With the assistance of an advisory board of experts from a wide variety of specialized areas, we hope to provide roughly annual volumes of invited chapters on a broad range of topics and designed for an interdisciplinary research audience. No single volume can cover all the rel evant topics and no single article can convey the full set of directions being pursued within a given topic. For this reason, a chapter listing technical reports available from universities is also included. Often, such unpub lished reports are designed for a general research audience and provide a good, informal look at trends in specialized research topics.


Government and Innovation

Government and Innovation

Author: United States. Congress. House. Committee on Science and Technology. Subcommittee on Science, Research, and Technology

Publisher:

Published: 1979

Total Pages: 532

ISBN-13:

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