Textbook for third-year undergraduate to first year graduate students in physics and microelectronics. Outlines concepts concerning the description and applications of novel semiconductor microstructures such as quantum wells, superlattices, and heterojunction microdevices in general (e.g. lasers, transistors, optical detectors, and switches). Annotation copyrighted by Book News, Inc., Portland, OR
Semiconductor optoelectronic devices are at the heart of all information generation and processing systems and are likely to be essential components of future optical computers. With more emphasis on optoelectronics and photonics in graduate programmes in physics and engineering, there is aneed for a text providing a basic understanding of the important physical phenomena involved. Such a training is necessary for the design, optimization, and search for new materials, devices, and application areas. This book provides a simple quantum mechanical theory of important optical processes,i.e. band-to-band, intersubband, and excitonic absorption and recombination in bulk, quantum wells, wires, dots, superlattices, and strained layers including electro-optic effects. The classical theory of absorption, quantization of radiation, and band picture based on k.p perturbation has beenincluded to provide the necessary background. Prerequisites for the book are a knowledge of quantum mechanics and solid state theory. Problems have been set at the end of each chapter, some of which may guide the reader to study processes not covered in the book. The application areas of thephenomena are also indicated.
The composition of modern semiconductor heterostructures can be controlled precisely on the atomic scale to create low-dimensional systems. These systems have revolutionised semiconductor physics, and their impact on technology, particularly for semiconductor lasers and ultrafast transistors, is widespread and burgeoning. This book provides an introduction to the general principles that underlie low-dimensional semiconductors. As far as possible, simple physical explanations are used, with reference to examples from actual devices. The author shows how, beginning with fundamental results from quantum mechanics and solid-state physics, a formalism can be developed that describes the properties of low-dimensional semiconductor systems. Among numerous examples, two key systems are studied in detail: the two-dimensional electron gas, employed in field-effect transistors, and the quantum well, whose optical properties find application in lasers and other opto-electronic devices. The book includes many exercises and will be invaluable to undergraduate and first-year graduate physics or electrical engineering students taking courses in low-dimensional systems or heterostructure device physics.
Microcavities are semiconductor, metal, or dielectric structures providing optical confinement in one, two or three dimensions. At the end of the 20th century, microcavities have attracted attention due to the discovery of a strong exciton-light coupling regime allowing for the formation of superposition light-matter quasiparticles: exciton-polaritons. In the following century several remarkable effects have been discovered in microcavities, including the Bose-Einstein condensation of exciton-polaritons, polariton lasing, superfluidity, optical spin Hall and spin Meissner effects, amongst other discoveries. Currently, polariton devices exploiting the bosonic stimulation effects at room temperature are being developed by laboratories across the world. This book addresses the physics of microcavities: from classical to quantum optics, from a Boltzmann gas to a superfluid. It provides the theoretical background needed for understanding the complex phenomena in coupled light-matter systems, and it presents a broad overview of experimental progress in the physics of microcavities.
Recently there have been major achievements in the study of semiconductor interfaces and microstructures for different materials and structural systems. Progress has been made through various experimental technologies and theoretical methods. This book provides an up-to-date review on these advances and includes the following major subjects: IV-IV, III-V and II-VI semiconductors and metal/semiconductor structures; new developments in growth methods; electric, optical, magnetic and structural characterization and properties; relative theories — electronic transport, phonos and interface modes; devices and applications. These materials are organized into four sections: General, III-V, II-VI and IV-IV, which offer comprehensive information and help readers in following the new developments in the research frontiers of the above fields.
Proceedings of the Baroda Workshop on Nanomaterials, Magnetic Ions and Magnetic Semiconductors studied mostly by Hyperfine Interactions (IWNMS 2004), held in Baroda, India, 10-14 February, 2004. Researchers and graduate students interested in the application of hyperfine interaction techniques, mostly Mössbauer Effect and Perturbed Angular Correlations, to the fast developing fields of magnetic nanomaterials, magnetic ions and magnetic semiconductors will find this volume indispensable. The volume also addresses to the application of synchrotron radiation and ion beams to these systems.
This volume provides the readers an in-depth, yet concise, overview of the physico-chemical structures, luminescence and related properties of II-VI compounds which are being utilised and exhaustively studied these days for their applications in LED's, modern optoelectronic devices, flat EL screens and panels, infrared detectors, photovoltaic and thermal solar energy converters etc. The book, therefore, should be useful to a wide variety of people (working in the field of luminescence and related properties of II-VI compounds, i.e. advanced graduate students) and serve as a review to researchers entering in this field and working on these materials. It should also be useful to solid state spectroscopists, lasers physicists; electronic and illuminating engineering people, and all those professionals using these materials.
Ultrafast spectroscopy of semiconductors and semiconductor nanostructures is currently one of the most exciting areas of research in condensed-matter physics. Remarkable recent progress in the generation of tunable femtosecond pulses has allowed direct investigation of the most fundamental dynamical processes in semiconductors. This second edition presents the most striking recent advances in the techniques of ultrashort pulse generation and ultrafast spectroscopy; it discusses the physics of relaxation, tunneling and transport dynamics in semiconductors and semiconductor nanostructures following excitation by femtosecond laser pulses.