This book mainly introduces the basic theory and physical characteristics of photoelectric materials, the preparation technology of photoelectric components, the working principle, the latest application, the latest progress of photoelectric materials and devices technology and the correlation with other technologies. The content mainly involves the theoretical basis of photoelectric materials, micro-nano photoelectric materials and devices, semiconductor luminescent materials and devices, inorganic photoluminescence materials, LED packaging technology, transparent conductive materials, touch screen, display screen, solar cell materials and the basic principles and development trend of their applications. In particular, the book gives a systematic theoretical analysis of new photoelectric materials and devices, such as optoelectronic materials and devices, transparent conductive materials, and provides application examples.
This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
As one of the eighteen field-specific reports comprising the comprehensive scope of the strategic general report of the Chinese Academy of Sciences, this sub-report addresses long-range planning for developing science and technology in the field of advanced materials science. They each craft a roadmap for their sphere of development to 2050. In their entirety, the general and sub-group reports analyze the evolution and laws governing the development of science and technology, describe the decisive impact of science and technology on the modernization process, predict that the world is on the eve of an impending S&T revolution, and call for China to be fully prepared for this new round of S&T advancement. Based on the detailed study of the demands on S&T innovation in China's modernization, the reports draw a framework for eight basic and strategic systems of socio-economic development with the support of science and technology, work out China's S&T roadmaps for the relevant eight basic and strategic systems in line with China's reality, further detail S&T initiatives of strategic importance to China's modernization, and provide S&T decision-makers with comprehensive consultations for the development of S&T innovation consistent with China's reality. Supported by illustrations and tables of data, the reports provide researchers, government officials and entrepreneurs with guidance concerning research directions, the planning process, and investment. Founded in 1949, the Chinese Academy of Sciences is the nation's highest academic institution in natural sciences. Its major responsibilities are to conduct research in basic and technological sciences, to undertake nationwide integrated surveys on natural resources and ecological environment, to provide the country with scientific data and consultations for government's decision-making, to undertake government-assigned projects with regard to key S&T problems in the process of socio-economic development, to initiate personnel training, and to promote China's high-tech enterprises through its active engagement in these areas.
This books provides a comprehensive platform to the scientific, education and research communities working on various fields related to sustainable energy. It covers the exploration, generation and application of this area to meet societal needs as well as addressing global issues related to the environment. The content of this book presents research related to energy and how to tackle climate change as a comprehensive framework based on the success of the Millennium Development Goals (MDGs). The authors use the scientific method to analyze and deliver viable technical solutions, demonstrating how chemistry and engineering can be combined to solve technically challenging problems. While maintaining high scientific rigor, a quantitative approach is offered in select chapters to the study of energy related to our societies increasing need for electrical and chemical energy feedstocks.
The interaction between light and electrons in semiconductors forms the basis for many interesting and practically significant properties. This book examines the fundamental physics underlying this rich complexity of photoelectronic properties of semiconductors, and will familiarise the reader with the relatively simple models that are useful in describing these fundamentals. The basic physics is also illustrated with typical recent examples of experimental data and observations. Following introductory material on the basic concepts, the book moves on to consider a wide range of phenomena, including photoconductivity, recombination effects, photoelectronic methods of defect analysis, photoeffects at grain boundaries, amorphous semiconductors, photovoltaic effects and photoeffects in quantum wells and superlattices. The author is Professor of Materials Science and Electrical Engineering at Stanford University, and has taught this material for many years. He is an experienced author, his earlier books having found wide acceptance and use. Readers will therefore find this volume to be an up-to-date and concise summary of the major concepts, models and results. It is intended as a text for graduate students, but will be an important resource for anyone researching in this interesting field.
To anyone who is interested in surface chemical analysis of materials on the nanometer scale, this book is prepared to give appropriate information. Based on typical application examples in materials science, a concise approach to all aspects of quantitative analysis of surfaces and thin films with AES and XPS is provided. Starting from basic principles which are step by step developed into practically useful equations, extensive guidance is given to graduate students as well as to experienced researchers. Key chapters are those on quantitative surface analysis and on quantitative depth profiling, including recent developments in topics such as surface excitation parameter and backscattering correction factor. Basic relations are derived for emission and excitation angle dependencies in the analysis of bulk material and of fractional nano-layer structures, and for both smooth and rough surfaces. It is shown how to optimize the analytical strategy, signal-to-noise ratio, certainty and detection limit. Worked examples for quantification of alloys and of layer structures in practical cases (e.g. contamination, evaporation, segregation and oxidation) are used to critically review different approaches to quantification with respect to average matrix correction factors and matrix relative sensitivity factors. State-of-the-art issues in quantitative, destructive and non-destructive depth profiling are discussed with emphasis on sputter depth profiling and on angle resolved XPS and AES. Taking into account preferential sputtering and electron backscattering corrections, an introduction to the mixing-roughness-information depth (MRI) model and its extensions is presented.
Perovskite Materials and Devices A comprehensive overview of the important scientific and technological advances in commercialization of this important mineral Perovskite has held much interest for scientists and industrialists, as the mineral is abundantly available in nature. Due to the intriguing and unusual physical properties of perovskite materials—the high-absorption coefficient, low exciton-binding energy, and high dielectric constant, for example—there has been substantial focus on perovskite’s potential in applications. In particular, they have been of great use in sensors and catalyst electrodes, certain types of fuel cells, solar cells, lasers, memory devices, and spintronics, and as a result hold exciting opportunities for physicists, chemists, and material scientists alike. Perovskite Materials and Devices comprehensively covers all the milestone work in perovskites research, systematically introducing the properties, methods, and technologies associated with the mineral from fundamentals to promising applications to commercialization issues. The book focuses on traditional and novel electronic operations, such as solar cells, LEDs, lasing, photodetectors, X-ray detectors, transistors, and more. It also investigates ways to make the use of such materials more environmentally friendly, which in turn can make perovskite minerals more commercially viable. Perovskite Materials and Devices readers will also find Summaries of the latest state-of-the-art developments and technologies, such as perovskite nanocrystals and novel electronic devices Detailed discussion of organic/inorganic hybrid perovskites, all-inorganic perovskite CsPbX3, and lead-free halide perovskites Investigation of the photovoltaic applications, namely single-crystal devices, tandem cells, integrated devices, semi-transparent devices, and flexible devices Description of large-area module fabrication and stability investigating Perovskite Materials and Devices is a useful reference for materials scientists, solid state physicists and chemists, surface physicists and chemists, and electronic engineers. It is also an ideal resource for libraries that supply these fields.
This book provides the first complete and up-to-date summary of the state of the art in HAXPES and motivates readers to harness its powerful capabilities in their own research. The chapters are written by experts. They include historical work, modern instrumentation, theory and applications. This book spans from physics to chemistry and materials science and engineering. In consideration of the rapid development of the technique, several chapters include highlights illustrating future opportunities as well.
This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.
