Theory of Transport Properties of Semiconductor Nanostructures

Theory of Transport Properties of Semiconductor Nanostructures

Author: Eckehard Schöll

Publisher: Springer Science & Business Media

Published: 2013-11-27

Total Pages: 394

ISBN-13: 1461558077

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Recent advances in the fabrication of semiconductors have created almost un limited possibilities to design structures on a nanometre scale with extraordinary electronic and optoelectronic properties. The theoretical understanding of elec trical transport in such nanostructures is of utmost importance for future device applications. This represents a challenging issue of today's basic research since it requires advanced theoretical techniques to cope with the quantum limit of charge transport, ultrafast carrier dynamics and strongly nonlinear high-field ef fects. This book, which appears in the electronic materials series, presents an over view of the theoretical background and recent developments in the theory of electrical transport in semiconductor nanostructures. It contains 11 chapters which are written by experts in their fields. Starting with a tutorial introduction to the subject in Chapter 1, it proceeds to present different approaches to transport theory. The semiclassical Boltzmann transport equation is in the centre of the next three chapters. Hydrodynamic moment equations (Chapter 2), Monte Carlo techniques (Chapter 3) and the cellular au tomaton approach (Chapter 4) are introduced and illustrated with applications to nanometre structures and device simulation. A full quantum-transport theory covering the Kubo formalism and nonequilibrium Green's functions (Chapter 5) as well as the density matrix theory (Chapter 6) is then presented.


Semiconductor Nanostructures for Optoelectronic Applications

Semiconductor Nanostructures for Optoelectronic Applications

Author: Todd D. Steiner

Publisher: Artech House

Published: 2004

Total Pages: 438

ISBN-13: 9781580537520

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Annotation Tiny structures measurable on the nanometer scale (one-billionth of a meter) are known as nanostructures, and nanotechnology is the emerging application of these nanostructures into useful nanoscale devices. As we enter the 21st century, more and more professional are using nanotechnology to create semiconductors for a variety of applications, including communications, information technology, medical, and transportation devices. Written by today's best researchers of semiconductor nanostructures, this cutting-edge resource provides a snapshot of this exciting and fast-changing field. The book covers the latest advances in nanotechnology and discusses the applications of nanostructures to optoelectronics, photonics, and electronics.


Characterization of Semiconductor Heterostructures and Nanostructures

Characterization of Semiconductor Heterostructures and Nanostructures

Author: Giovanni Agostini

Publisher: Elsevier

Published: 2011-08-11

Total Pages: 501

ISBN-13: 0080558151

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In the last couple of decades, high-performance electronic and optoelectronic devices based on semiconductor heterostructures have been required to obtain increasingly strict and well-defined performances, needing a detailed control, at the atomic level, of the structural composition of the buried interfaces. This goal has been achieved by an improvement of the epitaxial growth techniques and by the parallel use of increasingly sophisticated characterization techniques and of refined theoretical models based on ab initio approaches. This book deals with description of both characterization techniques and theoretical models needed to understand and predict the structural and electronic properties of semiconductor heterostructures and nanostructures. - Comprehensive collection of the most powerful characterization techniques for semiconductor heterostructures and nanostructures - Most of the chapters are authored by scientists that are among the top 10 worldwide in publication ranking of the specific field - Each chapter starts with a didactic introduction on the technique - The second part of each chapter deals with a selection of top examples highlighting the power of the specific technique to analyze the properties of semiconductors


Quantum Theory of the Optical and Electronic Properties of Semiconductors

Quantum Theory of the Optical and Electronic Properties of Semiconductors

Author: Hartmut Haug

Publisher: World Scientific Publishing Company

Published: 1994-10-31

Total Pages: 492

ISBN-13: 9813104783

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This textbook presents the basic elements needed to understand and engage in research in semiconductor physics. It deals with elementary excitations in bulk and low-dimensional semiconductors, including quantum wells, quantum wires and quantum dots. The basic principles underlying optical nonlinearities are developed, including excitonic and many-body plasma effects. The fundamentals of optical bistability, semiconductor lasers, femtosecond excitation, optical Stark effect, semiconductor photon echo, magneto-optic effects, as well as bulk and quantum-confined Franz-Keldysh effects are covered. The material is presented in sufficient detail for graduate students and researchers who have a general background in quantum mechanics. Request Inspection Copy


Semiconductor Nanostructures for Optoelectronic Devices

Semiconductor Nanostructures for Optoelectronic Devices

Author: Gyu-Chul Yi

Publisher: Springer Science & Business Media

Published: 2012-01-13

Total Pages: 347

ISBN-13: 3642224806

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This book presents the fabrication of optoelectronic nanodevices. The structures considered are nanowires, nanorods, hybrid semiconductor nanostructures, wide bandgap nanostructures for visible light emitters and graphene. The device applications of these structures are broadly explained. The book deals also with the characterization of semiconductor nanostructures. It appeals to researchers and graduate students.


Advanced Physics of Electron Transport in Semiconductors and Nanostructures

Advanced Physics of Electron Transport in Semiconductors and Nanostructures

Author: Massimo V. Fischetti

Publisher: Springer

Published: 2016-05-20

Total Pages: 481

ISBN-13: 3319011014

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This textbook is aimed at second-year graduate students in Physics, Electrical Engineering, or Materials Science. It presents a rigorous introduction to electronic transport in solids, especially at the nanometer scale.Understanding electronic transport in solids requires some basic knowledge of Hamiltonian Classical Mechanics, Quantum Mechanics, Condensed Matter Theory, and Statistical Mechanics. Hence, this book discusses those sub-topics which are required to deal with electronic transport in a single, self-contained course. This will be useful for students who intend to work in academia or the nano/ micro-electronics industry.Further topics covered include: the theory of energy bands in crystals, of second quantization and elementary excitations in solids, of the dielectric properties of semiconductors with an emphasis on dielectric screening and coupled interfacial modes, of electron scattering with phonons, plasmons, electrons and photons, of the derivation of transport equations in semiconductors and semiconductor nanostructures somewhat at the quantum level, but mainly at the semi-classical level. The text presents examples relevant to current research, thus not only about Si, but also about III-V compound semiconductors, nanowires, graphene and graphene nanoribbons. In particular, the text gives major emphasis to plane-wave methods applied to the electronic structure of solids, both DFT and empirical pseudopotentials, always paying attention to their effects on electronic transport and its numerical treatment. The core of the text is electronic transport, with ample discussions of the transport equations derived both in the quantum picture (the Liouville-von Neumann equation) and semi-classically (the Boltzmann transport equation, BTE). An advanced chapter, Chapter 18, is strictly related to the ‘tricky’ transition from the time-reversible Liouville-von Neumann equation to the time-irreversible Green’s functions, to the density-matrix formalism and, classically, to the Boltzmann transport equation. Finally, several methods for solving the BTE are also reviewed, including the method of moments, iterative methods, direct matrix inversion, Cellular Automata and Monte Carlo. Four appendices complete the text.


Optical and Electrical Properties of Single Self-Assembled Quantum Dots in Lateral Electric Fields

Optical and Electrical Properties of Single Self-Assembled Quantum Dots in Lateral Electric Fields

Author: Malte Huck

Publisher: diplom.de

Published: 2010-03-25

Total Pages: 137

ISBN-13: 3836644398

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Inhaltsangabe:Abstract: Chapter 1: In this thesis we investigate the optical properties of self-assembled quantum dots exposed to a lateral electric field. As a result of the electric field the wave functions of electrons and holes inside the quantum dot are manipulated, which makes it possible to tune their energy levels and control the optical properties of the system. The possibility of tuning the emission energy of different few particle states using this method makes this system very promising for the use of a source of polarization entangled photons as discussed in the following sections. In Section 1.1 the concept of entangled states is introduced together with a brief historical overview. The possibility of using the exciton biexciton cascade of a self-assembled quantum dot for the generation of entangled photon pairs is presented in Section 1.2. Chapter 2: In this chapter we introduce the concept of quantum dots and demonstrate their optical emission properties. In Section 2.1 the quantum dot is introduced as a three-dimensional charge carrier trap. Several types of quantum dots are presented in an overview. In Section 2.2 we discuss the physical effects that occur on the way from bulk semiconductor material to the three-dimensional charge carrier confinement in the case of quantum dots. The growth of self-assembled quantum dot samples is the topic of Section 2.3, where the technique of molecular beam epitaxy is introduced (Section 2.3.1). This technique is used to grow the semiconductor quantum dots via heteroepitaxy in the Stranski-Krastanov growth mode (Section 2.3.2). Quantum dots are commonly referred to as artificial atoms due to their atomlike emission features. The origin for this expression is explained in Section 2.4 on the basis of the energetic structure of self-assembled quantum dots. The optical properties of quantum dots are discussed in Section 2.5, beginning with an introduction to the experimental setup that has been used to investigate the quantum dots during this thesis (Section 2.5.1). Different optical excitation modes are presented in Section 2.5.2 and in Section 2.5.3 we discuss, how to achieve a low enough quantum dot density on the analyzed samples. Section 2.5.4 deals with the photoluminescence of different exciton states and in Section 2.5.5 we present how these lines can be identified via power dependent measurements. Finally, the concept of initial charges in self-assembled quantum dots is presented in [...]


Semiconductor Nanostructures

Semiconductor Nanostructures

Author: Dieter Bimberg

Publisher: Springer Science & Business Media

Published: 2008-06-03

Total Pages: 369

ISBN-13: 3540778993

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Reducing the size of a coherently grown semiconductor cluster in all three directions of space to a value below the de Broglie wavelength of a charge carrier leads to complete quantization of the energy levels, density of states, etc. Such “quantum dots” are more similar to giant atoms in a dielectric cage than to classical solids or semiconductors showing a dispersion of energy as a function of wavevector. Their electronic and optical properties depend strongly on their size and shape, i.e. on their geometry. By designing the geometry by controlling the growth of QDs, absolutely novel possibilities for material design leading to novel devices are opened. This multiauthor book written by world-wide recognized leaders of their particular fields and edited by the recipient of the Max-Born Award and Medal 2006 Professor Dieter Bimberg reports on the state of the art of the growing of quantum dots, the theory of self-organised growth, the theory of electronic and excitonic states, optical properties and transport in a variety of materials. It covers the subject from the early work beginning of the 1990s up to 2006. The topics addressed in the book are the focus of research in all leading semiconductor and optoelectronic device laboratories of the world.


Optical Properties of Semiconductor Nanostructures

Optical Properties of Semiconductor Nanostructures

Author: Marcin L. Sadowski

Publisher: Springer Science & Business Media

Published: 2000-06-30

Total Pages: 470

ISBN-13: 9780792363163

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Optical methods for investigating semiconductors and the theoretical description of optical processes have always been an important part of semiconductor physics. Only the emphasis placed on different materials changes with time. Here, a large number of papers are devoted to quantum dots, presenting the theory, spectroscopic investigation and methods of producing such structures. Another major part of the book reflects the growing interest in diluted semiconductors and II-IV nanosystems in general. There are also discussions of the fascinating field of photonic crystals. `Classical' low dimensional systems, such as GsAs/GaAlAs quantum wells and heterostructures, still make up a significant part of the results presented, and they also serve as model systems for new phenomena. New materials are being sought, and new experimental techniques are coming on stream, in particular the combination of different spectroscopic modalities.