Glow Discharge Optical Spectroscopy of Ion Implanted Gallium Arsenide

Glow Discharge Optical Spectroscopy of Ion Implanted Gallium Arsenide

Author: Kenneth R. Williamson

Publisher:

Published: 1978

Total Pages: 86

ISBN-13:

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Glow Discharge Optical Spectroscopy (GDOS) was used as a technique for obtaining impurity concentration profiles of annealed and unannealed ion implanted GaAs samples. Germanium, magnesium, and boron ions were implanted at energies of 60keV or 120keV and fluences of 1 or 5 times 10 to the 15th power/sq.cm. The samples were sputtered in a dc glow discharge. The intensities of strong emission lines (proportional to concentration) were calibrated using pure elements as standards, providing impurity concentration profiles. (Author).