Optical Properties of Narrow-Gap Low-Dimensional Structures
Optical Properties of Narrow-Gap Low-Dimensional Structures

Author: Clivia M. Sotomayor Torres

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 357

ISBN-13: 1461318793

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This volume contains the Proceedings of the NATO Advanced Research Workshop on "Optical Properties of Narrow-Gap Low-Dimensional Structures", held from July 29th to August 1st, 1986, in St. Andrews, Scotland, under the auspices of the NATO International Scientific Exchange Program. The workshop was not limited to optical properties of narrow-gap semiconductor structures (Part III). Sessions on, for example, the growth methods and characterization of III-V, II-VI, and IV-VI materials, discussed in Part II, were an integral part of the workshop. Considering the small masses of the carriers in narrow-gap low dimensional structures (LOS), in Part I the enhanced band mixing and magnetic field effects are explored in the context of the envelope function approximation. Optical nonlinearities and energy relaxation phenomena applied to the well-known systems of HgCdTe and GaAs/GaAIAs, respectively, are reviewed with comments on their extension to narrow gap LOS. The relevance of optical observations in quantum transport studies is illustrated in Part IV. A review of devices based on epitaxial narrow-gap materials defines a frame of reference for future ones based on two-dimensional narrow-gap semiconductors; in addition, an analysis of the physics of quantum well lasers provides a guide to relevant parameters for narrow-gap laser devices for the infrared (Part V). The roles and potentials of special techniques are explored in Part VI, with emphasis on hydrostatic pressure techniques, since this has a pronounced effect in small-mass, narrow-gap, non-parabolic structures.

Optical Properties Of Low-dimensional Materials, Vol 2
Optical Properties Of Low-dimensional Materials, Vol 2

Author: Tetsuo Ogawa

Publisher: World Scientific

Published: 1998-08-06

Total Pages: 470

ISBN-13: 9814497754

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This book surveys recent theoretical and experimental studies of optical properties of low-dimensional materials. As an extended version of Optical Properties of Low-Dimensional Materials (Volume 1, published in 1995 by World Scientific), Volume 2 covers a wide range of interesting low-dimensional materials including both inorganic and organic systems, such as disordered polymers, deformable molecular crystals, dilute magnetic semiconductors, SiGe/Si short-period superlattices, GaAs quantum wires, semiconductor microcavities, and photonic crystals. There are excellent review articles by promising researchers in each field. All the materials introduced in this book yield new optical phenomena originating from their mesoscopic and low-dimensional electronic characters and electron-lattice couplings, which offer a new research field of materials science as well as condensed-matter and optical physics. Volumes 1 and 2 are interrelated but can be read independently. They are pitched at the level of graduate students and are useful to both students and scientists.

Physics and Properties of Narrow Gap Semiconductors
Physics and Properties of Narrow Gap Semiconductors

Author: Junhao Chu

Publisher: Springer Science & Business Media

Published: 2007-11-21

Total Pages: 613

ISBN-13: 0387748016

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Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. They often operate at the extremes of the rules of semiconductor science. This book offers clear descriptions of crystal growth and the fundamental structure and properties of these unique materials. Topics covered include band structure, optical and transport properties, and lattice vibrations and spectra. A thorough treatment of the properties of low-dimensional systems and their relation to infrared applications is provided.

Magneto-optical Properties of Narrow-gap Semiconductor Heterostructures
Magneto-optical Properties of Narrow-gap Semiconductor Heterostructures

Author: Xingyuan Pan

Publisher:

Published: 2010

Total Pages:

ISBN-13:

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ABSTRACT: Next generation of semiconductor device will not only based on the charge transport properties of the carrier, but also their spin degree of freedom. In order to understand or predict how those devices work one need to understand the spin-dependent electronic structures of both bulk and low-dimensional semiconductors. We have theoretically studied the spin-dependent Landau levels for electrons or holes in bulk GaAs system and AlInSb/InSb multiple quantum wells system. We use the envelope function approximation for the electronic and magneto-optical properties of AlInSb/InSb superlattices. Our model includes the conduction electrons, heavy holes, light holes and the split-off holes for a total of 8 bands when spin is taken into account. It is a generalization of the Pidgeon-Brown model to include the wave vector dependence of the electronic states, as well as quantization of wave vector due to multiple quantum well superlattice effects. In addition, we take strain effects into account by assuming pseudomorphic growth conditions. For bulk GaAs system, we calculated the spin-dependent absorption coefficients which can be directly compared with the optically pumped NMR experiment. We show that the optically pumped NMR is a complimentary tool to traditional magneto optical absorption measurement, in the sense that optically pumped NMR is more sensitive to the light hole transitions which are very hard to resolve in the traditional magneto absorption measurement. For the AlInSb/InSb multiple quantum well system, we calculated both the magneto absorption spectra and 10 the cyclotron resonance spectra. We compare both spectra to experimental results and achieve a good agreement. This agreement assures us that our understanding of the valence band structure of the narrow gap InSb materials are correct.

Device Physics of Narrow Gap Semiconductors
Device Physics of Narrow Gap Semiconductors

Author: Junhao Chu

Publisher: Springer Science & Business Media

Published: 2009-10-13

Total Pages: 506

ISBN-13: 1441910409

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Narrow gap semiconductors obey the general rules of semiconductor science, but often exhibit extreme features of these rules because of the same properties that produce their narrow gaps. Consequently these materials provide sensitive tests of theory, and the opportunity for the design of innovative devices. Narrow gap semiconductors are the most important materials for the preparation of advanced modern infrared systems. Device Physics of Narrow Gap Semiconductors, a forthcoming second book, offers descriptions of the materials science and device physics of these unique materials. Topics covered include impurities and defects, recombination mechanisms, surface and interface properties, and the properties of low dimensional systems for infrared applications. This book will help readers to understand not only semiconductor physics and materials science, but also how they relate to advanced opto-electronic devices. The final chapter describes the device physics of photoconductive detectors, photovoltaic infrared detectors, super lattices and quantum wells, infrared lasers, and single photon infrared detectors.

Optical Properties of Solids
Optical Properties of Solids

Author: S. Mitra

Publisher: Springer

Published: 2013-04-17

Total Pages: 639

ISBN-13: 1475711239

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This book is an account of the manner in which the optical phenomena observed from solids relate to their fundamental properties. Written at the graduate level, it attempts a threefold purpose: an indication of the breadth of the subject, an in-depth examination of important areas, and a text for a two-semester course. The first two chapters present introductory theory as a foundation for subsequent reading. The following ten chapters broadly concern electronic properties associated with semiconductors ranging from narrow to wide energy gap materials. Lattice properties are examined in the remaining chap ters, in which effects governed by phonons in perfect crystals, point defects, their vibrational and electronic spectra, and electron-phonon interactions are stressed. Fun and hard work, both in considerable measure, have gone into the preparation of this volume. At the University of Freiburg, W. Germany, from August 7-20, 1966, the occasion of a NATO Advanced Study Institute on "The Optical Properties of Solids," the authors of these various chapters lectured for the Institute; this volume provides essentially the "Proceed ings" of that meeting. Many major revisions of original lectures (contrac tions and enlargements) were required for better organization and presentation of the subject matter. Several abbreviated chapters appear mainly to indicate the importance of their contents in optical properties research and to indicate recently published books that provide ample coverage. We are indebted to many people: the authors for their efforts and patience; our host at the University of Freiburg, the late Professor Dr.

Transport and Optical Properties of Quantized Low-dimensional Systems
Transport and Optical Properties of Quantized Low-dimensional Systems

Author: Xiaoguang Li

Publisher:

Published: 2011

Total Pages: 155

ISBN-13:

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In this thesis, we present a systematic investigation of the static and dynamic response properties of low-dimensional systems, using a variety of theoretical techniques ranging from time dependent density functional theory to the recursive Green's function method. As typical low-dimensional systems, metal nanostructures can strongly interact with an electric field to support surface plasmons, making their optical properties extremely attractive in both fundamental and applied aspects. We have investigated the energy broadening of surface plasmons in metal structures of reduced dimensionality, where Landau damping is the dominant dissipation channel and presents an intrinsic limitation to plasmonics technology. We show that for every prototype class of systems considered, including nanoshells, coaxial nanotubes, and ultrathin films, Landau damping can be drastically tuned due to energy quantization of the individual electron levels and e-h pairs. Both the generic trend and oscillatory nature of the tunability are in stark contrast with the expectations of the semiclassical surface scattering picture. For a more realistic environment of low-dimensional systems, the effect of a dielectric substrate is considered to mimic the experimental setup. We have studied the dispersion of various plasmon excitations in metal thin films with growth substrates. Our results qualitatively reproduce the experimentally observed plasmon spectra of the Mg/Si systems. The underlying physics for the formation of various absorption peaks can be understood with a simple hybridization concept. Based on this concept, the coexistence of surface and bulk plasmons in experimental observation turns out to be a clear evidence for the existence of multiple-multipole surface plasmons due to the quantum confinement in thin films. To step into more confined worlds, we choose the real two-dimensional material graphene as our representive system, which is a semi-metal with zero band-gap. As the first step, the static electric response of graphene is investigated by exploring its transport properties. We have studied the pseudospin valve effect in bilayer graphene nanoribbons. The pseudospin degree of freedom is associated with the electron density in two layers and can be controlled by external gate electrodes. We find that the conductance of nanoribbons shows different behaviors compared with infinite systems due to the appearance of edge states and quantum confinement. Remarkably, a large on-off ratio can be achieved in nanoribbons with zigzag edges, even when the Fermi energy lies in the bulk energy gap. The influence of possible edge vacancies and interface conditions is also discussed. Finally, we discuss the possibility of using plasmon excitations to detach the graphene from its growth substrate, where the dynamic electric response of the graphene-metal system is expected to play a central role.