Open Source TCAD/EDA for Compact Modeling

Open Source TCAD/EDA for Compact Modeling

Author: Wladyslaw Grabinski

Publisher: Springer

Published: 2018-04-13

Total Pages:

ISBN-13: 9789402410891

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The aim of this book is to highlight the benefits of a higher interoperability between Technology Computer-Aided Design and Electronic Design Automation, focusing on specifically selected open source tools for compact modeling. Due to the tremendous developments in semiconductor technology in recent years, device level modelling and integrated circuit design have become intimately related. However, they have been traditionally disconnected up to the circuit level. This book consists of a set of extended user manuals guiding the reader from the usual software, from multidimensional numerical process and device simulations, through compact model development and its Verilog-A standardization to carefully selected IC designs for analog, radio frequency and digital applications. Bringing together contributions from academic and industrial researchers and engineers, the book forms a valuable reference for students and those working in the field.


Compact Modeling

Compact Modeling

Author: Gennady Gildenblat

Publisher: Springer Science & Business Media

Published: 2010-06-22

Total Pages: 531

ISBN-13: 9048186145

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Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.


3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics

3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics

Author: Simon Li

Publisher: Springer Science & Business Media

Published: 2011-10-01

Total Pages: 303

ISBN-13: 1461404819

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Technology computer-aided design, or TCAD, is critical to today’s semiconductor technology and anybody working in this industry needs to know something about TCAD. This book is about how to use computer software to manufacture and test virtually semiconductor devices in 3D. It brings to life the topic of semiconductor device physics, with a hands-on, tutorial approach that de-emphasizes abstract physics and equations and emphasizes real practice and extensive illustrations. Coverage includes a comprehensive library of devices, representing the state of the art technology, such as SuperJunction LDMOS, GaN LED devices, etc.


Advanced SPICE Model for GaN HEMTs (ASM-HEMT)

Advanced SPICE Model for GaN HEMTs (ASM-HEMT)

Author: Sourabh Khandelwal

Publisher:

Published: 2022

Total Pages: 0

ISBN-13: 9783030777319

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This book discusses in detail the Advanced SPICE Model for GaN HEMTs (ASM-HEMT), a new industry standard model for GaN-based power and RF circuit design. The author describes this new, standard model in detail, covering the different components of the ASM GaN model from fundamental derivations to the implementation in circuit simulation tools. The book also includes a detailed description of parameter extraction steps and model quality tests, which are critically important for effective use of this standard model in circuit simulation and product design. Coverage includes both radio-frequency (RF), and power electronics applications of this model. Practical issues related to measurement data and parameter extraction flow are also discussed, enabling readers easily to adopt this new model for design flow and simulation tools. Describes in detail a new industry standard for GaN-based power and RF circuit design; Includes discussion of practical problems and their solutions in GaN device modeling; Covers both radio-frequency (RF) and power electronics application of GaN technology; Describes modeling of both GaN RF and power devices.


MOSFET Models for SPICE Simulation

MOSFET Models for SPICE Simulation

Author: William Liu

Publisher: Wiley-IEEE Press

Published: 2001-02-21

Total Pages: 608

ISBN-13:

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An expert guide to understanding and making optimum use of BSIM Used by more chip designers worldwide than any other comparable model, the Berkeley Short-Channel IGFET Model (BSIM) has, over the past few years, established itself as the de facto standard MOSFET SPICE model for circuit simulation and CMOS technology development. Yet, until now, there have been no independent expert guides or tutorials to supplement the various BSIM manuals currently available. Written by a noted expert in the field, this book fills that gap in the literature by providing a comprehensive guide to understanding and making optimal use of BSIM3 and BSIM4. Drawing upon his extensive experience designing with BSIM, William Liu provides a brief history of the model, discusses the various advantages of BSIM over other models, and explores the reasons why BSIM3 has been adopted by the majority of circuit manufacturers. He then provides engineers with the detailed practical information and guidance they need to master all of BSIM's features. He: Summarizes key BSIM3 components Represents the BSIM3 model with equivalent circuits for various operating conditions Provides a comprehensive glossary of modeling terminology Lists alphabetically BSIM3 parameters along with their meanings and relevant equations Explores BSIM3's flaws and provides improvement suggestions Describes all of BSIM4's improvements and new features Provides useful SPICE files, which are available online at the Wiley ftp site


3D TCAD Simulation for CMOS Nanoeletronic Devices

3D TCAD Simulation for CMOS Nanoeletronic Devices

Author: Yung-Chun Wu

Publisher: Springer

Published: 2017-06-19

Total Pages: 337

ISBN-13: 9811030669

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This book demonstrates how to use the Synopsys Sentaurus TCAD 2014 version for the design and simulation of 3D CMOS (complementary metal–oxide–semiconductor) semiconductor nanoelectronic devices, while also providing selected source codes (Technology Computer-Aided Design, TCAD). Instead of the built-in examples of Sentaurus TCAD 2014, the practical cases presented here, based on years of teaching and research experience, are used to interpret and analyze simulation results of the physical and electrical properties of designed 3D CMOSFET (metal–oxide–semiconductor field-effect transistor) nanoelectronic devices. The book also addresses in detail the fundamental theory of advanced semiconductor device design for the further simulation and analysis of electric and physical properties of semiconductor devices. The design and simulation technologies for nano-semiconductor devices explored here are more practical in nature and representative of the semiconductor industry, and as such can promote the development of pioneering semiconductor devices, semiconductor device physics, and more practically-oriented approaches to teaching and learning semiconductor engineering. The book can be used for graduate and senior undergraduate students alike, while also offering a reference guide for engineers and experts in the semiconductor industry. Readers are expected to have some preliminary knowledge of the field.


Transistor Level Modeling for Analog/RF IC Design

Transistor Level Modeling for Analog/RF IC Design

Author: Wladyslaw Grabinski

Publisher: Springer Science & Business Media

Published: 2006-07-01

Total Pages: 298

ISBN-13: 1402045565

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The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization. The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas.


Silicon Photonics Design

Silicon Photonics Design

Author: Lukas Chrostowski

Publisher: Cambridge University Press

Published: 2015-03-12

Total Pages: 439

ISBN-13: 1107085454

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This hands-on introduction to silicon photonics engineering equips students with everything they need to begin creating foundry-ready designs.


Technology CAD — Computer Simulation of IC Processes and Devices

Technology CAD — Computer Simulation of IC Processes and Devices

Author: Robert W. Dutton

Publisher: Springer Science & Business Media

Published: 2012-12-06

Total Pages: 386

ISBN-13: 1461532086

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129 3.6 Exercises 130 3.7 References. 131 4 PN Junctions 131 4.1 Introduction. 132 4.2 Carrier Densities: Equilibrium Case 4.3 Non-Equilibrium .......... . 139 4.4 Carrier Transport and Conservation 144 4.5 The pn Junction - Equilibrium Conditions. 147 155 4.6 The pn Junction - Non-equilibrium. 4.7 SEDAN Analysis . . . . . . . . . . . . . 166 4.7.1 Heavy Doping Effects ..... . 176 4.7.2 Analysis of High-Level Injection 181 190 4.7.3 Technology-Dependent Device Effects 4.8 Summary 193 4.9 Exercises 193 194 4.10 References. 5 MOS Structures 197 5.1 Introduction ............. . 197 5.2 The MOS Capacitor ........ . 198 5.3 Basic MOSFET I-V Characteristics. 208 5.4 Threshold Voltage in Nonuniform Substrate 217 5.5 MOS Device Design by Simulation . . . . . 224 5.5.1 Body-bias Sensitivity of Threshold Voltage 225 5.5.2 Two-region Model . . . . . . . . 231 5.5.3 MOSFET Design by Simulation. 234 5.6 Summary 240 5.7 Exercises 240 5.8 References. 242 6 Bipolar Transistors 243 6.1 Introduction ... 243 6.2 Lateral pnp Transistor Operation 245 6.3 Transport Current Analysis ... 252 6.4 Generalized Charge Storage Model 260 6.,1) Transistor Equivalent Circuits. 267 6.5.1 Charge Control Model ...