On-Wafer Calibration Techniques Enabling Accurate Characterization of High-Performance Silicon Devices at the mm-Wave Range and Beyond
On-Wafer Calibration Techniques Enabling Accurate Characterization of High-Performance Silicon Devices at the mm-Wave Range and Beyond

Author: Andrej Rumiantsev

Publisher: CRC Press

Published: 2022-09-01

Total Pages: 279

ISBN-13: 1000792854

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The increasing demand for more content, services, and security drives the development of high-speed wireless technologies, optical communication, automotive radar, imaging and sensing systems and many other mm-wave and THz applications. S-parameter measurement at mm-wave and sub-mm wave frequencies plays a crucial role in the modern IC design debug. Most importantly, however, is the step of device characterization for development and optimization of device model parameters for new technologies. Accurate characterization of the intrinsic device in its entire operation frequency range becomes extremely important and this task is very challenging. This book presents solutions for accurate mm-wave characterization of advanced semiconductor devices. It guides through the process of development, implementation and verification of the in-situ calibration methods optimized for high-performance silicon technologies. Technical topics discussed in the book include: Specifics of S-parameter measurements of planar structures Complete mathematical solution for lumped-standard based calibration methods, including the transfer Thru-Match-Reflect (TMR) algorithms Design guideline and examples for the on-wafer calibration standards realized in both advanced SiGe BiCMOS and RF CMOS processes Methods for verification of electrical characteristics of calibration standards and accuracy of the in-situ calibration results Comparison of the new technique vs. conventional approaches: the probe-tip calibration and the pad parasitic de-embedding for various device types, geometries and model parameters New aspects of the on-wafer RF measurements at mmWave frequency range and calibration assurance.

Microwave De-embedding
Microwave De-embedding

Author: Gilles Dambrine

Publisher: Elsevier Inc. Chapters

Published: 2013-11-09

Total Pages: 42

ISBN-13: 0128068566

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This chapter aims to describe experimental tools and techniques used for on-wafer millimeter (mm)-wave characterizations of silicon-based devices under the small-signal regime. We discuss the basics of scattering parameters (S parameters), high-frequency (HF) noise concept and measurement facilities, and expert details concerning experimental procedures. In this chapter, we describe first the basic notions of the S-parameters concept and its limitations, as well of as those HF noise. Secondly, the main experimental tools such as mm-wave vectorial network analyzer, noise setup, and on-wafer station are depicted. The third part concerns the description and the methodology of on-wafer calibration and de-embedding techniques applied for mm-wave advanced silicon devices. Finally, the last section focuses on the presentation and description of several examples of device characterizations. The main objective of this chapter is to propose a tradeoff between basic information and details of experience.

(Sub)-millimeter Wave On-wafer Calibration and Device Characterization
(Sub)-millimeter Wave On-wafer Calibration and Device Characterization

Author: Marco Cabbia

Publisher:

Published: 2021

Total Pages: 0

ISBN-13:

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Precision measurements play a crucial role in electronic engineering, particularly in the characterization of silicon-based heterojunction bipolar transistors (HBTs) embedded into devices for THz applications using the BiCMOS technology. Thanks to ongoing innovations in terms of nanoscale technology manufacturing, devices capable of operating in the sub-millimeter wave region are becoming a reality, and need to support the demand for high frequency circuits and systems. To have accurate models at such frequencies, it is no longer possible to limit the parameter extraction below 110 GHz, and new techniques for obtaining reliable measurements of passive and active devices must be investigated.In this thesis, we examine the on-wafer S-parameters characterization of various passive test structures and SiGe HBTs in STMicroelectronics' B55 technology, up to 500 GHz. We start with an introduction of the measuring equipment usually employed for this type of analysis, then moving on to the various probe stations adopted at the IMS Laboratory, and finally focusing on calibration and deembedding techniques, reviewing the major criticalities of high-frequency characterization and comparing two on-wafer calibration algorithms (SOLT and TRL) up to the WR-2.2 band.Two photomask production runs for on-wafer characterization, both designed at IMS, are considered: we introduce a new floorplan design and evaluate its ability to limit parasitic effects as well as the effect of the environment (substrate, neighbors, and crosstalk). For our analysis, we rely on electromagnetic simulations and joint device model + probe EM simulations, both including probe models for an evaluation of measurement results closer to real-world conditions.Finally, we present some test structures to evaluate unwanted impacts on millimeter wave measurements and novel transmission line design solutions. Two promising designs are carefully studied: the "M3 layout", which aims to characterize the DUT in a single-tier calibration, and the "meander lines", which keeps the inter-probe distance constant by avoiding any sort of probe displacement during on-wafer measurements.

On-Wafer Calibration Techniques Enabling Accurate Characterization of High-Performance Silicon Devices at the Mm-Wave Range and Beyond
On-Wafer Calibration Techniques Enabling Accurate Characterization of High-Performance Silicon Devices at the Mm-Wave Range and Beyond

Author: Andrej Rumiantsev

Publisher: Electronic Materials and Devic

Published: 2019-05-30

Total Pages: 0

ISBN-13: 9788770221122

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The increasing demand for more content, services, and security drives the development of high-speed wireless technologies, optical communication, automotive radar, imaging and sensing systems and many other mm-wave and THz applications. S-parameter measurement at mm-wave and sub-mm wave frequencies plays a crucial role in the modern IC design debug. Most importantly, however, is the step of device characterization for development and optimization of device model parameters for new technologies. Accurate characterization of the intrinsic device in its entire operation frequency range becomes extremely important and this task is very challenging. This book presents solutions for accurate mm-wave characterization of advanced semiconductor devices. It guides through the process of development, implementation and verification of the in-situ calibration methods optimized for high-performance silicon technologies. Technical topics discussed in the book include: Specifics of S-parameter measurements of planar structures Complete mathematical solution for lumped-standard based calibration methods, including the transfer Thru-Match-Reflect (TMR) algorithms Design guideline and examples for the on-wafer calibration standards realized in both advanced SiGe BiCMOS and RF CMOS processes Methods for verification of electrical characteristics of calibration standards and accuracy of the in-situ calibration results Comparison of the new technique vs. conventional approaches: the probe-tip calibration and the pad parasitic de-embedding for various device types, geometries and model parameters New aspects of the on-wafer RF measurements at mmWave frequency range and calibration assurance.

Non-contact Probes
Non-contact Probes

Author: Cosan Caglayan

Publisher:

Published: 2016

Total Pages:

ISBN-13:

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A novel, non-contact metrology approach for on-wafer characterization of sub-mmW devices, components, and integrated circuits (ICs) is presented. Conventional contact probes are extremely limited for sub-mmW measurements due to increasing losses and inherently large parasitics. They are also very costly and suffer from physical fragility issues. As such, device testing in the 0.3-3 THz remains a specialty of few research groups that can shoulder the high cost of operating and maintaining such setups. Unlike existing contact probes which rely on fragile tips and physical contact with the device on the chip, the new non-contact probes are based on electromagnetic coupling of vector network analyzer (VNA) test ports into the coplanar waveguide (CPW) environment of the integrated devices and circuits. Efficient signal coupling is achieved via a quasi-optical link between the VNA ports and planar antennas that are monolithically integrated with the device-under-test. The test chip is then interfaced with an extended hemispherical lens on the back side to collimate the VNA port signals onto the non-contact probe antennas. These antennas act as "virtual'' probe-tips on the test chip and connect to the device through optimized, impedance matched CPW lines. Radiation patterns and the impedance performance of the probe antennas are optimized using in-house moment method tools for robust and broadband quasi-optical coupling of the VNA ports. Repeatable errors of the non-contact probe setup are calibrated using on-wafer standards, allowing for accurate S-parameter measurements. Experimental validation of the new non-contact device metrology system is presented via measurement of 1-port and 2-port devices in the 90-750 GHz band. Demonstration of active non-contact probes is carried out by characterization of an on-chip integrated Schottky diode. Moreover, differential-mode on-wafer measurements beyond 110 GHz are presented for the first time. Owing to the non-contact nature, the proposed approach is free from wear and tear and fragility issues. More importantly, they are low-cost and can be easily scaled beyond 1 THz where there is no existing solution for on-chip device and IC testing.

MM-wave On-wafer Characterization of Electro-optic Devices: a New, Simple Approach
MM-wave On-wafer Characterization of Electro-optic Devices: a New, Simple Approach

Author:

Publisher:

Published: 2000

Total Pages:

ISBN-13:

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A new simple experimental set-up both for on-wafer and in-package electrical and electro-optic characterization of electro-optic devices up to 40 GHz is presented. The technique makes only use of a conventional network vector analyzer (NVA) and of a calibrated high-speed photodetector. The electro-optic transmission coefficient is simply deembedded from the electrical S21 using the detector calibrated responsivity. The RF calibration of the set-up implements the RSOL technique. The results obtained are shown to be comparable with the ones given by commercially available instrumentation, both in terms of accuracy and repeatability. The frequency bandwidth is only determined by the NVA bandwidth provided that the photodetector RF output is well above the NVA noise floor. Firstly some comparison with commercially available instrumentation up to 40 GHz on in-package device will be shown to validate the technique, after that, results concerning both in-package and on-wafer devices up to 40 GHz will be reported.

Antenna-in-Package Technology and Applications
Antenna-in-Package Technology and Applications

Author: Duixian Liu

Publisher: John Wiley & Sons

Published: 2020-03-31

Total Pages: 416

ISBN-13: 1119556635

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A comprehensive guide to antenna design, manufacturing processes, antenna integration, and packaging Antenna-in-Package Technology and Applications contains an introduction to the history of AiP technology. It explores antennas and packages, thermal analysis and design, as well as measurement setups and methods for AiP technology. The authors—well-known experts on the topic—explain why microstrip patch antennas are the most popular and describe the myriad constraints of packaging, such as electrical performance, thermo-mechanical reliability, compactness, manufacturability, and cost. The book includes information on how the choice of interconnects is governed by JEDEC for automatic assembly and describes low-temperature co-fired ceramic, high-density interconnects, fan-out wafer level packaging–based AiP, and 3D-printing-based AiP. The book includes a detailed discussion of the surface laminar circuit–based AiP designs for large-scale mm-wave phased arrays for 94-GHz imagers and 28-GHz 5G New Radios. Additionally, the book includes information on 3D AiP for sensor nodes, near-field wireless power transfer, and IoT applications. This important book: • Includes a brief history of antenna-in-package technology • Describes package structures widely used in AiP, such as ball grid array (BGA) and quad flat no-leads (QFN) • Explores the concepts, materials and processes, designs, and verifications with special consideration for excellent electrical, mechanical, and thermal performance Written for students in electrical engineering, professors, researchers, and RF engineers, Antenna-in-Package Technology and Applications offers a guide to material selection for antennas and packages, antenna design with manufacturing processes and packaging constraints, antenna integration, and packaging.