On-Wafer Calibration Techniques Enabling Accurate Characterization of High-Performance Silicon Devices at the mm-Wave Range and Beyond
On-Wafer Calibration Techniques Enabling Accurate Characterization of High-Performance Silicon Devices at the mm-Wave Range and Beyond

Author: Andrej Rumiantsev

Publisher: CRC Press

Published: 2022-09-01

Total Pages: 279

ISBN-13: 1000792854

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The increasing demand for more content, services, and security drives the development of high-speed wireless technologies, optical communication, automotive radar, imaging and sensing systems and many other mm-wave and THz applications. S-parameter measurement at mm-wave and sub-mm wave frequencies plays a crucial role in the modern IC design debug. Most importantly, however, is the step of device characterization for development and optimization of device model parameters for new technologies. Accurate characterization of the intrinsic device in its entire operation frequency range becomes extremely important and this task is very challenging. This book presents solutions for accurate mm-wave characterization of advanced semiconductor devices. It guides through the process of development, implementation and verification of the in-situ calibration methods optimized for high-performance silicon technologies. Technical topics discussed in the book include: Specifics of S-parameter measurements of planar structures Complete mathematical solution for lumped-standard based calibration methods, including the transfer Thru-Match-Reflect (TMR) algorithms Design guideline and examples for the on-wafer calibration standards realized in both advanced SiGe BiCMOS and RF CMOS processes Methods for verification of electrical characteristics of calibration standards and accuracy of the in-situ calibration results Comparison of the new technique vs. conventional approaches: the probe-tip calibration and the pad parasitic de-embedding for various device types, geometries and model parameters New aspects of the on-wafer RF measurements at mmWave frequency range and calibration assurance.

On-Wafer Calibration Techniques Enabling Accurate Characterization of High-Performance Silicon Devices at the Mm-Wave Range and Beyond
On-Wafer Calibration Techniques Enabling Accurate Characterization of High-Performance Silicon Devices at the Mm-Wave Range and Beyond

Author: Andrej Rumiantsev

Publisher: Electronic Materials and Devic

Published: 2019-05-30

Total Pages: 0

ISBN-13: 9788770221122

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The increasing demand for more content, services, and security drives the development of high-speed wireless technologies, optical communication, automotive radar, imaging and sensing systems and many other mm-wave and THz applications. S-parameter measurement at mm-wave and sub-mm wave frequencies plays a crucial role in the modern IC design debug. Most importantly, however, is the step of device characterization for development and optimization of device model parameters for new technologies. Accurate characterization of the intrinsic device in its entire operation frequency range becomes extremely important and this task is very challenging. This book presents solutions for accurate mm-wave characterization of advanced semiconductor devices. It guides through the process of development, implementation and verification of the in-situ calibration methods optimized for high-performance silicon technologies. Technical topics discussed in the book include: Specifics of S-parameter measurements of planar structures Complete mathematical solution for lumped-standard based calibration methods, including the transfer Thru-Match-Reflect (TMR) algorithms Design guideline and examples for the on-wafer calibration standards realized in both advanced SiGe BiCMOS and RF CMOS processes Methods for verification of electrical characteristics of calibration standards and accuracy of the in-situ calibration results Comparison of the new technique vs. conventional approaches: the probe-tip calibration and the pad parasitic de-embedding for various device types, geometries and model parameters New aspects of the on-wafer RF measurements at mmWave frequency range and calibration assurance.

(Sub)-millimeter Wave On-wafer Calibration and Device Characterization
(Sub)-millimeter Wave On-wafer Calibration and Device Characterization

Author: Marco Cabbia

Publisher:

Published: 2021

Total Pages: 0

ISBN-13:

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Precision measurements play a crucial role in electronic engineering, particularly in the characterization of silicon-based heterojunction bipolar transistors (HBTs) embedded into devices for THz applications using the BiCMOS technology. Thanks to ongoing innovations in terms of nanoscale technology manufacturing, devices capable of operating in the sub-millimeter wave region are becoming a reality, and need to support the demand for high frequency circuits and systems. To have accurate models at such frequencies, it is no longer possible to limit the parameter extraction below 110 GHz, and new techniques for obtaining reliable measurements of passive and active devices must be investigated.In this thesis, we examine the on-wafer S-parameters characterization of various passive test structures and SiGe HBTs in STMicroelectronics' B55 technology, up to 500 GHz. We start with an introduction of the measuring equipment usually employed for this type of analysis, then moving on to the various probe stations adopted at the IMS Laboratory, and finally focusing on calibration and deembedding techniques, reviewing the major criticalities of high-frequency characterization and comparing two on-wafer calibration algorithms (SOLT and TRL) up to the WR-2.2 band.Two photomask production runs for on-wafer characterization, both designed at IMS, are considered: we introduce a new floorplan design and evaluate its ability to limit parasitic effects as well as the effect of the environment (substrate, neighbors, and crosstalk). For our analysis, we rely on electromagnetic simulations and joint device model + probe EM simulations, both including probe models for an evaluation of measurement results closer to real-world conditions.Finally, we present some test structures to evaluate unwanted impacts on millimeter wave measurements and novel transmission line design solutions. Two promising designs are carefully studied: the "M3 layout", which aims to characterize the DUT in a single-tier calibration, and the "meander lines", which keeps the inter-probe distance constant by avoiding any sort of probe displacement during on-wafer measurements.

Microwave De-embedding
Microwave De-embedding

Author: Giovanni Crupi

Publisher: Academic Press

Published: 2013-11-09

Total Pages: 481

ISBN-13: 0124045928

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This groundbreaking book is the first to give an introduction to microwave de-embedding, showing how it is the cornerstone for waveform engineering. The authors of each chapter clearly explain the theoretical concepts, providing a foundation that supports linear and non-linear measurements, modelling and circuit design. Recent developments and future trends in the field are covered throughout, including successful strategies for low-noise and power amplifier design. This book is a must-have for those wishing to understand the full potential of the microwave de-embedding concept to achieve successful results in the areas of measurements, modelling, and design at high frequencies. With this book you will learn: The theoretical background of high-frequency de-embedding for measurements, modelling, and design Details on applying the de-embedding concept to the transistor’s linear, non-linear, and noise behaviour The impact of de-embedding on low-noise and power amplifier design The recent advances and future trends in the field of high-frequency de-embedding Presents the theory and practice of microwave de-embedding, from the basic principles to recent advances and future trends Written by experts in the field, all of whom are leading researchers in the area Each chapter describes theoretical background and gives experimental results and practical applications Includes forewords by Giovanni Ghione and Stephen Maas

Antenna-in-Package Technology and Applications
Antenna-in-Package Technology and Applications

Author: Duixian Liu

Publisher: John Wiley & Sons

Published: 2020-03-31

Total Pages: 416

ISBN-13: 1119556635

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A comprehensive guide to antenna design, manufacturing processes, antenna integration, and packaging Antenna-in-Package Technology and Applications contains an introduction to the history of AiP technology. It explores antennas and packages, thermal analysis and design, as well as measurement setups and methods for AiP technology. The authors—well-known experts on the topic—explain why microstrip patch antennas are the most popular and describe the myriad constraints of packaging, such as electrical performance, thermo-mechanical reliability, compactness, manufacturability, and cost. The book includes information on how the choice of interconnects is governed by JEDEC for automatic assembly and describes low-temperature co-fired ceramic, high-density interconnects, fan-out wafer level packaging–based AiP, and 3D-printing-based AiP. The book includes a detailed discussion of the surface laminar circuit–based AiP designs for large-scale mm-wave phased arrays for 94-GHz imagers and 28-GHz 5G New Radios. Additionally, the book includes information on 3D AiP for sensor nodes, near-field wireless power transfer, and IoT applications. This important book: • Includes a brief history of antenna-in-package technology • Describes package structures widely used in AiP, such as ball grid array (BGA) and quad flat no-leads (QFN) • Explores the concepts, materials and processes, designs, and verifications with special consideration for excellent electrical, mechanical, and thermal performance Written for students in electrical engineering, professors, researchers, and RF engineers, Antenna-in-Package Technology and Applications offers a guide to material selection for antennas and packages, antenna design with manufacturing processes and packaging constraints, antenna integration, and packaging.

Fundamentals of RF and Microwave Transistor Amplifiers
Fundamentals of RF and Microwave Transistor Amplifiers

Author: Inder Bahl

Publisher: John Wiley & Sons

Published: 2009-06-17

Total Pages: 696

ISBN-13: 9780470462317

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A Comprehensive and Up-to-Date Treatment of RF and Microwave Transistor Amplifiers This book provides state-of-the-art coverage of RF and microwave transistor amplifiers, including low-noise, narrowband, broadband, linear, high-power, high-efficiency, and high-voltage. Topics covered include modeling, analysis, design, packaging, and thermal and fabrication considerations. Through a unique integration of theory and practice, readers will learn to solve amplifier-related design problems ranging from matching networks to biasing and stability. More than 240 problems are included to help readers test their basic amplifier and circuit design skills-and more than half of the problems feature fully worked-out solutions. With an emphasis on theory, design, and everyday applications, this book is geared toward students, teachers, scientists, and practicing engineers who are interested in broadening their knowledge of RF and microwave transistor amplifier circuit design.

Terahertz Sensing Technology
Terahertz Sensing Technology

Author: William R. Loerop

Publisher: World Scientific

Published: 2003

Total Pages: 366

ISBN-13: 9789812796820

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The last research frontier in high frequency electronics now lies in the so-called THz (or submillimeter-wave) regime between the traditional microwave and infrared domains. Significant scientific and technical challenges within the terahertz (THz) frequency regime have recently motivated an array of new research activities. During the last few years, major research programs have emerged that are focused on advancing the state of the art in THz frequency electronic technology and on investigating novel applications of THz frequency sensing. This book serves as a detailed reference for the new THz frequency technological advances that are emerging across a wide spectrum of sensing and technology areas. Contents: THz Technology: An Overview (P H Siegel); Two-Terminal Active Devices for Terahertz Sources (G I Haddad et al.); Multiplier and Harmonic Generator Technologies for Terahertz Applications (R M Weikle II et al.); Submicron InP-Based HBTs for Ultra-High Frequency Amplifiers (M Urteaga et al.); THz Generation by Photomixing in Ultrafast Photoconductors (E R Brown); Silicon-Germanium Quantum-Cascade Lasers (R W Kelsall & R A Soref); Plasma Wave Electronics (M S Shur & V Ryzhii); T-Ray Sensing and Imaging (S P Mickan & X-C Zhang); Multistatic Reflection Imaging with Terahertz Pulses (T D Dorney et al.). Readership: Undergraduates, graduate students, academics and researchers in electrical & electronic engineering.