This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices; Enables readers to design more reliable semiconductor devices; Offers the most up-to-date information on point defects, based on physical microscopic models.
A discussion of recently developed experimental methods for noise research in nanoscale electronic devices, conducted by specialists in transport and stochastic phenomena in nanoscale physics. The approach described is to create methods for experimental observations of noise sources, their localization and their frequency spectrum, voltage-current and thermal dependences. Our current knowledge of measurement methods for mesoscopic devices is summarized to identify directions for future research, related to downscaling effects. The directions for future research into fluctuation phenomena in quantum dot and quantum wire devices are specified. Nanoscale electronic devices will be the basic components for electronics of the 21st century. From this point of view the signal-to-noise ratio is a very important parameter for the device application. Since the noise is also a quality and reliability indicator, experimental methods will have a wide application in the future.
Noise Coupling is the root-cause of the majority of Systems on Chip (SoC) product fails. The book discusses a breakthrough substrate coupling analysis flow and modelling toolset, addressing the needs of the design community. The flow provides capability to analyze noise components, propagating through the substrate, the parasitic interconnects and the package. Using this book, the reader can analyze and avoid complex noise coupling that degrades RF and mixed signal design performance, while reducing the need for conservative design practices. With chapters written by leading international experts in the field, novel methodologies are provided to identify noise coupling in silicon. It additionally features case studies that can be found in any modern CMOS SoC product for mobile communications, automotive applications and readout front ends.
This Springer Handbook comprehensively covers the topic of semiconductor devices, embracing all aspects from theoretical background to fabrication, modeling, and applications. Nearly 100 leading scientists from industry and academia were selected to write the handbook's chapters, which were conceived for professionals and practitioners, material scientists, physicists and electrical engineers working at universities, industrial R&D, and manufacturers. Starting from the description of the relevant technological aspects and fabrication steps, the handbook proceeds with a section fully devoted to the main conventional semiconductor devices like, e.g., bipolar transistors and MOS capacitors and transistors, used in the production of the standard integrated circuits, and the corresponding physical models. In the subsequent chapters, the scaling issues of the semiconductor-device technology are addressed, followed by the description of novel concept-based semiconductor devices. The last section illustrates the numerical simulation methods ranging from the fabrication processes to the device performances. Each chapter is self-contained, and refers to related topics treated in other chapters when necessary, so that the reader interested in a specific subject can easily identify a personal reading path through the vast contents of the handbook.
Nanoscale memories are used everywhere. From your iPhone to a supercomputer, every electronic device contains at least one such type. With coverage of current and prototypical technologies, Nanoscale Semiconductor Memories: Technology and Applications presents the latest research in the field of nanoscale memories technology in one place. It also covers a myriad of applications that nanoscale memories technology has enabled. The book begins with coverage of SRAM, addressing the design challenges as the technology scales, then provides design strategies to mitigate radiation induced upsets in SRAM. It discusses the current state-of-the-art DRAM technology and the need to develop high performance sense amplifier circuitry. The text then covers the novel concept of capacitorless 1T DRAM, termed as Advanced-RAM or A-RAM, and presents a discussion on quantum dot (QD) based flash memory. Building on this foundation, the coverage turns to STT-RAM, emphasizing scalable embedded STT-RAM, and the physics and engineering of magnetic domain wall "racetrack" memory. The book also discusses state-of-the-art modeling applied to phase change memory devices and includes an extensive review of RRAM, highlighting the physics of operation and analyzing different materials systems currently under investigation. The hunt is still on for universal memory that fits all the requirements of an "ideal memory" capable of high-density storage, low-power operation, unparalleled speed, high endurance, and low cost. Taking an interdisciplinary approach, this book bridges technological and application issues to provide the groundwork for developing custom designed memory systems.
The "Twelfth International Conference on Simulation of Semiconductor Processes and Devices" (SISPAD 2007) continues a long series of conferences and is held in September 2007 at the TU Wien, Vienna, Austria. The conference is the leading forum for Technology Computer-Aided Design (TCAD) held alternatingly in the United States, Japan, and Europe. The first SISPAD conference took place in Tokyo in 1996 as the successor to three preceding conferences NUPAD, VPAD, and SISDEP. With its longstanding history SISPAD provides a world-wide forum for the presentaƯ tion and discussion of outstanding recent advances and developments in the field of numerical process and device simulation. Driven by the ongoing miniaturization in semiconductor fabrication technology, the variety of topics discussed at this meeting reflects the ever-growing complexity of the subject. Apart from the classic topics like process, device, and interconnect simulation, mesh generation, a broad specƯ trum of numerical issues, and compact modeling, new simulation approaches like atomistic and first-principles methods have emerged as important fields of research and are currently making their way into standard TCAD suites
A practical, in-depth description of the physics behind electron emission physics and its usage in science and technology Electron emission is both a fundamental phenomenon and an enabling component that lies at the very heart of modern science and technology. Written by a recognized authority in the field, with expertise in both electron emission physics and electron beam physics, An Introduction to Electron Emission provides an in-depth look at the physics behind thermal, field, photo, and secondary electron emission mechanisms, how that physics affects the beams that result through space charge and emittance growth, and explores the physics behind their utilization in an array of applications. The book addresses mathematical and numerical methods underlying electron emission, describing where the equations originated, how they are related, and how they may be correctly used to model actual sources for devices using electron beams. Writing for the beam physics and solid state communities, the author explores applications of electron emission methodology to solid state, statistical, and quantum mechanical ideas and concepts related to simulations of electron beams to condensed matter, solid state and fabrication communities. Provides an extensive description of the physics behind four electron emission mechanisms—field, photo, and secondary, and how that physics relates to factors such as space charge and emittance that affect electron beams. Introduces readers to mathematical and numerical methods, their origins, and how they may be correctly used to model actual sources for devices using electron beams Demonstrates applications of electron methodology as well as quantum mechanical concepts related to simulations of electron beams to solid state design and manufacture Designed to function as both a graduate-level text and a reference for research professionals Introduction to the Physics of Electron Emission is a valuable learning tool for postgraduates studying quantum mechanics, statistical mechanics, solid state physics, electron transport, and beam physics. It is also an indispensable resource for academic researchers and professionals who use electron sources, model electron emission, develop cathode technologies, or utilize electron beams.
This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004. The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world. Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.
Dieses wichtige Referenzwerk behandelt die grundlegenden Konzepte der Photoleitfähigkeit und der photoleitenden Materialien. Mit Photoconductivity and Photoconductive Materials präsentiert Professor Kasap eine maßgebliche Zusammenstellung der wesentlichen Grundsätze der Photoleitfähigkeit und stellt eine Auswahl aktueller photoleitfähiger Materialien vor. Der erste Band des zweibändigen Werks beginnt mit einer Darstellung der grundlegenden Konzepte und Definitionen. Es folgt eine Charakterisierung der verschiedenen Techniken auf Grundlage von stationärer, transienter und modulierter Photoleitfähigkeit, u.a. der neuen Methode der Ladungsextraktion durch linear steigende Spannung (CELIV). Auch die Physik der Terahertz-Photoleitfähigkeit sowie die Grundlagen der organischen Halbleiter LSoI werden behandelt. Der zweite Band beginnt mit einem umfassenden Überblick über eine Vielzahl unterschiedlicher photoleitfähiger Materialien, wobei der Schwerpunkt auf einige der wichtigsten Photoleiter gelegt wird, darunter hydriertes amorphes Silizium, Cadmium-Quecksilber-Tellurid, verschiedene Röntgenphotoleiter, Diamantfilme, Metallhalogenidperowskite, Nanodrähte und Quantenpunkte. Auch die Anwendungen der photoleitenden Antenne werden erörtert. Das Werk, das zahlreiche Beiträge führender Autoren auf diesem Fachgebiet enthält, bietet den Leserinnen und Lesern außerdem: * Eine gründliche Einführung in die Charakterisierung von Halbleitern mit Hilfe von Techniken der Photoleitfähigkeit, insbesondere gleichmäßiger Beleuchtung und Phototräger-Gittertechniken * Eine umfassende Darstellung organischer Photoleiter mitsamt Informationen zu Photoerzeugung, Transport und Anwendungen im Druckbereich * Praktische Erörterungen der transienten Lichtleitfähigkeit im Flugzeitverfahren inklusive Experimentiertechniken und Interpretationshinweisen * Eine eingehende Betrachtung der transienten Photoleitfähigkeit organischer Halbleiterschichten und neuartiger Techniken der transienten Photoleitfähigkeit Photoconductivity and Photoconductive Materials ist nicht nur ein wichtiges Referenzwerk für Physiker in der Forschung, Materialwissenschaftler und Elektroingenieure, sondern auch ein unverzichtbares Nachschlagewerk für Doktoranden und Studierende höherer Semester, die sich mit dem Bereich der optoelektronischen Materialien beschäftigen, sowie für Forschende in der Industrie. * Ein umfassendes zweibändiges Werk mit Beiträgen führender Fachautoren, herausgegeben von einem angesehenen Forscher auf dem Gebiet der Photoleitfähigkeit
This book results from a NATO Advanced Research Workshop titled “Technological Innovations in CBRNE Sensing and Detection for Safety, Security, and Sustainability” held in Yerevan, Armenia in 2012. The objective was to discuss and exchange views as to how fusion of advanced technologies can lead to improved sensors/detectors in support of defense, security, and situational awareness. The chapters range from policy and implementation, advanced sensor platforms using stand-off (THz and optical) and point-contact methods for detection of chemical, nuclear, biological, nuclear and explosive agents and contaminants in water, to synthesis methods for several materials used for sensors. In view of asymmetric, kinetic, and distributed nature of threat vectors, an emphasis is placed to examine new generation of sensors/detectors that utilize an ecosystems of innovation and advanced sciences convergence in support of effective counter-measures against CBRNE threats. The book will be of considerable interest and value to those already pursuing or considering careers in the field of nanostructured materials, and sensing/detection of CBRNE agents and water-borne contaminants. For policy implementation and compliance standpoint, the book serves as a resource of several informative contributions. In general, it serves as a valuable source of information for those interested in how nanomaterials and nanotechnologies are advancing the field of sensing and detection using nexus of advanced technologies for scientists, technologists, policy makers, and soldiers and commanders.
