Nanoscale CMOS

Nanoscale CMOS

Author: Francis Balestra

Publisher: John Wiley & Sons

Published: 2013-03-01

Total Pages: 518

ISBN-13: 1118622472

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This book provides a comprehensive review of the state-of-the-art in the development of new and innovative materials, and of advanced modeling and characterization methods for nanoscale CMOS devices. Leading global industry bodies including the International Technology Roadmap for Semiconductors (ITRS) have created a forecast of performance improvements that will be delivered in the foreseeable future – in the form of a roadmap that will lead to a substantial enlargement in the number of materials, technologies and device architectures used in CMOS devices. This book addresses the field of materials development, which has been the subject of a major research drive aimed at finding new ways to enhance the performance of semiconductor technologies. It covers three areas that will each have a dramatic impact on the development of future CMOS devices: global and local strained and alternative materials for high speed channels on bulk substrate and insulator; very low access resistance; and various high dielectric constant gate stacks for power scaling. The book also provides information on the most appropriate modeling and simulation methods for electrical properties of advanced MOSFETs, including ballistic transport, gate leakage, atomistic simulation, and compact models for single and multi-gate devices, nanowire and carbon-based FETs. Finally, the book presents an in-depth investigation of the main nanocharacterization techniques that can be used for an accurate determination of transport parameters, interface defects, channel strain as well as RF properties, including capacitance-conductance, improved split C-V, magnetoresistance, charge pumping, low frequency noise, and Raman spectroscopy.


Nano-scale CMOS Analog Circuits

Nano-scale CMOS Analog Circuits

Author: Soumya Pandit

Publisher: CRC Press

Published: 2018-09-03

Total Pages: 397

ISBN-13: 1466564288

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Reliability concerns and the limitations of process technology can sometimes restrict the innovation process involved in designing nano-scale analog circuits. The success of nano-scale analog circuit design requires repeat experimentation, correct analysis of the device physics, process technology, and adequate use of the knowledge database. Starting with the basics, Nano-Scale CMOS Analog Circuits: Models and CAD Techniques for High-Level Design introduces the essential fundamental concepts for designing analog circuits with optimal performances. This book explains the links between the physics and technology of scaled MOS transistors and the design and simulation of nano-scale analog circuits. It also explores the development of structured computer-aided design (CAD) techniques for architecture-level and circuit-level design of analog circuits. The book outlines the general trends of technology scaling with respect to device geometry, process parameters, and supply voltage. It describes models and optimization techniques, as well as the compact modeling of scaled MOS transistors for VLSI circuit simulation. • Includes two learning-based methods: the artificial neural network (ANN) and the least-squares support vector machine (LS-SVM) method • Provides case studies demonstrating the practical use of these two methods • Explores circuit sizing and specification translation tasks • Introduces the particle swarm optimization technique and provides examples of sizing analog circuits • Discusses the advanced effects of scaled MOS transistors like narrow width effects, and vertical and lateral channel engineering Nano-Scale CMOS Analog Circuits: Models and CAD Techniques for High-Level Design describes the models and CAD techniques, explores the physics of MOS transistors, and considers the design challenges involving statistical variations of process technology parameters and reliability constraints related to circuit design.


Low-Power High-Level Synthesis for Nanoscale CMOS Circuits

Low-Power High-Level Synthesis for Nanoscale CMOS Circuits

Author: Saraju P. Mohanty

Publisher: Springer Science & Business Media

Published: 2008-05-31

Total Pages: 325

ISBN-13: 0387764747

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This self-contained book addresses the need for analysis, characterization, estimation, and optimization of the various forms of power dissipation in the presence of process variations of nano-CMOS technologies. The authors show very large-scale integration (VLSI) researchers and engineers how to minimize the different types of power consumption of digital circuits. The material deals primarily with high-level (architectural or behavioral) energy dissipation.


Nanoscale CMOS VLSI Circuits: Design for Manufacturability

Nanoscale CMOS VLSI Circuits: Design for Manufacturability

Author: Sandip Kundu

Publisher: McGraw Hill Professional

Published: 2010-06-22

Total Pages: 316

ISBN-13: 0071635203

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Cutting-Edge CMOS VLSI Design for Manufacturability Techniques This detailed guide offers proven methods for optimizing circuit designs to increase the yield, reliability, and manufacturability of products and mitigate defects and failure. Covering the latest devices, technologies, and processes, Nanoscale CMOS VLSI Circuits: Design for Manufacturability focuses on delivering higher performance and lower power consumption. Costs, constraints, and computational efficiencies are also discussed in the practical resource. Nanoscale CMOS VLSI Circuits covers: Current trends in CMOS VLSI design Semiconductor manufacturing technologies Photolithography Process and device variability: analyses and modeling Manufacturing-Aware Physical Design Closure Metrology, manufacturing defects, and defect extraction Defect impact modeling and yield improvement techniques Physical design and reliability DFM tools and methodologies


Nanoscale MOS Transistors

Nanoscale MOS Transistors

Author: David Esseni

Publisher: Cambridge University Press

Published: 2011-01-20

Total Pages: 489

ISBN-13: 1139494384

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Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: • Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials • All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework • Predictive capabilities of device models, discussed with systematic comparisons to experimental results


Nano-scale CMOS Analog Circuits

Nano-scale CMOS Analog Circuits

Author: Soumya Pandit

Publisher: CRC Press

Published: 2018-09-03

Total Pages: 410

ISBN-13: 1351831992

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Reliability concerns and the limitations of process technology can sometimes restrict the innovation process involved in designing nano-scale analog circuits. The success of nano-scale analog circuit design requires repeat experimentation, correct analysis of the device physics, process technology, and adequate use of the knowledge database. Starting with the basics, Nano-Scale CMOS Analog Circuits: Models and CAD Techniques for High-Level Design introduces the essential fundamental concepts for designing analog circuits with optimal performances. This book explains the links between the physics and technology of scaled MOS transistors and the design and simulation of nano-scale analog circuits. It also explores the development of structured computer-aided design (CAD) techniques for architecture-level and circuit-level design of analog circuits. The book outlines the general trends of technology scaling with respect to device geometry, process parameters, and supply voltage. It describes models and optimization techniques, as well as the compact modeling of scaled MOS transistors for VLSI circuit simulation. • Includes two learning-based methods: the artificial neural network (ANN) and the least-squares support vector machine (LS-SVM) method • Provides case studies demonstrating the practical use of these two methods • Explores circuit sizing and specification translation tasks • Introduces the particle swarm optimization technique and provides examples of sizing analog circuits • Discusses the advanced effects of scaled MOS transistors like narrow width effects, and vertical and lateral channel engineering Nano-Scale CMOS Analog Circuits: Models and CAD Techniques for High-Level Design describes the models and CAD techniques, explores the physics of MOS transistors, and considers the design challenges involving statistical variations of process technology parameters and reliability constraints related to circuit design.


Radio-Frequency Digital-to-Analog Converters

Radio-Frequency Digital-to-Analog Converters

Author: Morteza S Alavi

Publisher: Academic Press

Published: 2016-11-18

Total Pages: 304

ISBN-13: 0128025034

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With the proliferation of wireless networks, there is a need for more compact, low-cost, power efficient transmitters that are capable of supporting the various communication standards, including Bluetooth, WLAN, GSM/EDGE, WCDMA and 4G of 3GPP cellular. This book describes a novel idea of RF digital-to-analog converters (RFDAC) and demonstrates how they can realize all-digital, fully-integrated RF transmitters that support all the current multi-mode and multi-band communication standards. With this book the reader will: - Understand the challenges of realizing a universal CMOS RF transmitter - Recognize the design issues and the advantages and disadvantages related to analog and digital transmitter architectures - Master designing an RF transmitter from system level modeling techniques down to circuit designs and their related layout know-hows - Grasp digital polar and I/Q calibration techniques as well as the digital predistortion approaches - Learn how to generate appropriate digital I/Q baseband signals in order to apply them to the test chip and measure the RF-DAC performance. - Highlights the benefits and implementation challenges of software-defined transmitters using CMOS technology - Includes various types of analog and digital RF transmitter architectures for wireless applications - Presents an all-digital polar RFDAC transmitter architecture and describes in detail its implementation - Presents a new all-digital I/Q RFDAC transmitter architecture and its implementation - Provides comprehensive design techniques from system level to circuit level - Introduces several digital predistortion techniques which can be used in RF transmitters - Describes the entire flow of system modeling, circuit simulation, layout techniques and the measurement process


Nanoscale Devices

Nanoscale Devices

Author: Brajesh Kumar Kaushik

Publisher: CRC Press

Published: 2018-11-16

Total Pages: 432

ISBN-13: 1351670220

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The primary aim of this book is to discuss various aspects of nanoscale device design and their applications including transport mechanism, modeling, and circuit applications. . Provides a platform for modeling and analysis of state-of-the-art devices in nanoscale regime, reviews issues related to optimizing the sub-nanometer device performance and addresses simulation aspect and/or fabrication process of devices Also, includes design problems at the end of each chapter


Compact MOSFET Models for VLSI Design

Compact MOSFET Models for VLSI Design

Author: A. B. Bhattacharyya

Publisher: John Wiley & Sons

Published: 2009-07-23

Total Pages: 512

ISBN-13: 0470823437

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Practicing designers, students, and educators in the semiconductor field face an ever expanding portfolio of MOSFET models. In Compact MOSFET Models for VLSI Design , A.B. Bhattacharyya presents a unified perspective on the topic, allowing the practitioner to view and interpret device phenomena concurrently using different modeling strategies. Readers will learn to link device physics with model parameters, helping to close the gap between device understanding and its use for optimal circuit performance. Bhattacharyya also lays bare the core physical concepts that will drive the future of VLSI development, allowing readers to stay ahead of the curve, despite the relentless evolution of new models. Adopts a unified approach to guide students through the confusing array of MOSFET models Links MOS physics to device models to prepare practitioners for real-world design activities Helps fabless designers bridge the gap with off-site foundries Features rich coverage of: quantum mechanical related phenomena Si-Ge strained-Silicon substrate non-classical structures such as Double Gate MOSFETs Presents topics that will prepare readers for long-term developments in the field Includes solutions in every chapter Can be tailored for use among students and professionals of many levels Comes with MATLAB code downloads for independent practice and advanced study This book is essential for students specializing in VLSI Design and indispensible for design professionals in the microelectronics and VLSI industries. Written to serve a number of experience levels, it can be used either as a course textbook or practitioner’s reference. Access the MATLAB code, solution manual, and lecture materials at the companion website: www.wiley.com/go/bhattacharyya