This book is about large-scale electronic circuits design driven by nanotechnology, where nanotechnology is broadly defined as building circuits using nanoscale devices that are either implemented with nanomaterials (e.g., nanotubes or nanowires) or following an unconventional method (e.g., FinFET or III/V compound-based devices). These nanoscale devices have significant potential to revolutionize the fabrication and integration of electronic systems and scale beyond the perceived scaling limitations of traditional CMOS. While innovations in nanotechnology originate at the individual device level, realizing the true impact of electronic systems demands that these device-level capabilities be translated into system-level benefits. This is the first book to focus on nanoscale circuits and their design issues, bridging the existing gap between nanodevice research and nanosystem design.
The first book devoted to quantum-dot cellular automata (QCA), this groundbreaking resource provides a comprehensive view of QCA, showing practitioners how to work with this cutting-edge technology.
The process of Integrated Circuits (IC) started its era of VLSI (Very Large Scale Integration) in 1970’s when thousands of transistors were integrated into one single chip. Nowadays we are able to integrate more than a billion transistors on a single chip. However, the term “VLSI” is still being used, though there was some effort to coin a new term ULSI (Ultra-Large Scale Integration) for fine distinctions many years ago. VLSI technology has brought tremendous benefits to our everyday life since its occurrence. VLSI circuits are used everywhere, real applications include microprocessors in a personal computer or workstation, chips in a graphic card, digital camera or camcorder, chips in a cell phone or a portable computing device, and embedded processors in an automobile, et al. VLSI covers many phases of design and fabrication of integrated circuits. For a commercial chip design, it involves system definition, VLSI architecture design and optimization, RTL (register transfer language) coding, (pre- and post-synthesis) simulation and verification, synthesis, place and route, timing analyses and timing closure, and multi-step semiconductor device fabrication including wafer processing, die preparation, IC packaging and testing, et al. As the process technology scales down, hundreds or even thousands of millions of transistors are integrated into one single chip. Hence, more and more complicated systems can be integrated into a single chip, the so-called System-on-chip (SoC), which brings to VLSI engineers ever increasingly challenges to master techniques in various phases of VLSI design. For modern SoC design, practical applications are usually speed hungry. For instance, Ethernet standard has evolved from 10Mbps to 10Gbps. Now the specification for 100Mbps Ethernet is on the way. On the other hand, with the popularity of wireless and portable computing devices, low power consumption has become extremely critical. To meet these contradicting requirements, VLSI designers have to perform optimizations at all levels of design. This book is intended to cover a wide range of VLSI design topics. The book can be roughly partitioned into four parts. Part I is mainly focused on algorithmic level and architectural level VLSI design and optimization for image and video signal processing systems. Part II addresses VLSI design optimizations for cryptography and error correction coding. Part III discusses general SoC design techniques as well as other application-specific VLSI design optimizations. The last part will cover generic nano-scale circuit-level design techniques.
Fachlich auf höchstem Niveau, visuell überzeugend und durchgängig farbig illustriert: Das ist die neue Auflage der praxisbewährten Einführung in spezialisierte elektronische Materialien und Bauelemente aus der Informationstechnologie. Über ein Drittel des Inhalts ist neu, alle anderen Beiträge wurden gründlich überarbeitet und aktualisiert.
This book features selected papers presented at Third International Conference on Nanoelectronics, Circuits and Communication Systems (NCCS 2017). Covering topics such as MEMS and nanoelectronics, wireless communications, optical communication, instrumentation, signal processing, Internet of Things, image processing, bioengineering, green energy, hybrid vehicles, environmental science, weather forecasting, cloud computing, renewable energy, RFID, CMOS sensors, actuators, transducers, telemetry systems, embedded systems, and sensor network applications in mines, it is a valuable resource for young scholars, researchers, and academics.
Nanoelectronic Device Applications Handbook gives a comprehensive snapshot of the state of the art in nanodevices for nanoelectronics applications. Combining breadth and depth, the book includes 68 chapters on topics that range from nano-scaled complementary metal–oxide–semiconductor (CMOS) devices through recent developments in nano capacitors and AlGaAs/GaAs devices. The contributors are world-renowned experts from academia and industry from around the globe. The handbook explores current research into potentially disruptive technologies for a post-CMOS world. These include: Nanoscale advances in current MOSFET/CMOS technology Nano capacitors for applications such as electronics packaging and humidity sensors Single electron transistors and other electron tunneling devices Quantum cellular automata and nanomagnetic logic Memristors as switching devices and for memory Graphene preparation, properties, and devices Carbon nanotubes (CNTs), both single CNT and random network Other CNT applications such as terahertz, sensors, interconnects, and capacitors Nano system architectures for reliability Nanowire device fabrication and applications Nanowire transistors Nanodevices for spintronics The book closes with a call for a new generation of simulation tools to handle nanoscale mechanisms in realistic nanodevice geometries. This timely handbook offers a wealth of insights into the application of nanoelectronics. It is an invaluable reference and source of ideas for anyone working in the rapidly expanding field of nanoelectronics.
Focussing on micro- and nanoelectronics design and technology, this book provides thorough analysis and demonstration, starting from semiconductor devices to VLSI fabrication, designing (analog and digital), on-chip interconnect modeling culminating with emerging non-silicon/ nano devices. It gives detailed description of both theoretical as well as industry standard HSPICE, Verilog, Cadence simulation based real-time modeling approach with focus on fabrication of bulk and nano-devices. Each chapter of this proposed title starts with a brief introduction of the presented topic and ends with a summary indicating the futuristic aspect including practice questions. Aimed at researchers and senior undergraduate/graduate students in electrical and electronics engineering, microelectronics, nanoelectronics and nanotechnology, this book: Provides broad and comprehensive coverage from Microelectronics to Nanoelectronics including design in analog and digital electronics. Includes HDL, and VLSI design going into the nanoelectronics arena. Discusses devices, circuit analysis, design methodology, and real-time simulation based on industry standard HSPICE tool. Explores emerging devices such as FinFETs, Tunnel FETs (TFETs) and CNTFETs including their circuit co-designing. Covers real time illustration using industry standard Verilog, Cadence and Synopsys simulations.
Selected, peer reviewed papers from the 2010 IITA International Conference on Nanotechnology and Computer Engineering (CNCE 2010), held in Qingdao, China, July 20-21, 2010
This text comprehensively discusses the advanced MOS devices and their circuit applications with reliability concerns. Further, an energy-efficient Tunnel FET-based circuit application will be investigated in terms of the output voltage, power efficiency, energy consumption, and performances using the device circuit co-design approach. The book: • Discusses advanced MOS devices and their circuit design for energy- efficient systems on chips (SoCs). • Covers MOS devices, materials, and related semiconductor transistor technologies for the next-generation ultra-low-power applications. • Examines the use of field-effect transistors for biosensing circuit applications and covers reliability design considerations and compact modeling of advanced low-power MOS transistors. • Includes research problem statements with specifications and commercially available industry data in the appendix. • Presents Verilog-A model-based simulations for circuit analysis. The volume provides detailed discussions of DC and analog/RF characteristics, effects of trap-assisted tunneling (TAT) for reliability analysis, spacer-underlap engineering methodology, doping profile analysis, and work-function techniques. It further covers novel MOS devices including FinFET, Graphene field-effect transistor, Tunnel FETS, and Flash memory devices. It will serve as an ideal design book for senior undergraduate students, graduate students, and academic researchers in the fields including electrical engineering, electronics and communication engineering, computer engineering, materials science, nanoscience, and nanotechnology.
Nanoscale Memristor Device and Circuits Design provides theoretical frameworks, including (i) the background of memristors, (ii) physics of memristor and their modeling, (iii) menristive device applications, and (iv) circuit design for security and authentication. The book focuses on a broad aspect of realization of these applications as low cost and reliable devices. This is an important reference that will help materials scientists and engineers understand the production and applications of nanoscale memrister devices. A memristor is a two-terminal memory nanoscale device that stores information in terms of high/low resistance. It can retain information even when the power source is removed, i.e., "non-volatile." In contrast to MOS Transistors (MOST), which are the building blocks of all modern mobile and computing devices, memristors are relatively immune to radiation, as well as parasitic effects, such as capacitance, and can be much more reliable. This is extremely attractive for critical safety applications, such as nuclear and aerospace, where radiation can cause failure in MOST-based systems. - Outlines the major principles of circuit design for nanoelectronic applications - Explores major applications, including memristor-based memories, sensors, solar cells, or memristor-based hardware and software security applications - Assesses the major challenges to manufacturing nanoscale memristor devices at an industrial scale
